Laser-induced decomposition of trimethyl(methoxy)silane, hexamethyldisiloxane and tetramethoxysilane for production of silicon-containing coatings

IR laser­induced thermolysis and UV laser­induced photolysis of 1,3­diethyldisiloxane: chemical vapour deposition of nanotextured hydridoalkylsilicones

“…No cleavage of the weaker Si-C bond having been observed indicated that the more stable Si-O bond is broken via a kinetically favored path possibly involving ionic impurities or apparatus surfaces. 3 Conversely to the hot-surface heterogeneous conditions, truly homogeneous, gas-phase IR laser-induced decomposition of hexamethyldisiloxane takes place exclusively via cleavage of the Si-C bonds 10,11 and some Si-O bond splitting can be only achieved under conditions close to the dielectric breakdown. 12 The IR laser thermolysis [13][14][15] of gaseous methyldisiloxanes [(CH 3 ) n H 32n Si] 2 O (n~0-2) differs from UV laser photolytic 16,17 decomposition of these compounds: the cleavage of the Si-O bond occurs under thermolysis, but it does not take place under photolysis.…”

“…Conversely, the UV photolysis of disiloxane (n~0) takes place via cleavage of the Si-H bonds 16 and that of 1,3-dimethyldisiloxane (n~1) occurs via cleavage of the Si-C and Si-H bonds. 17 The IR laser thermolysis and UV laser photolysis of gaseous disiloxanes [10][11][12][13][14][15][16][17] as well as pyrolytic laser-induced interaction with disiloxane aerosols 18 are convenient methods for chemical deposition of hydrogenated silicon-rich Si-O and Si-C-O films which find applications in microelectronics and are important in various fields of applied research. In these processes, the composition of the films was demonstrated to differ depending on the structure and the decomposition mechanism of the precursor.…”

IR laser-induced decomposition of disiloxane for chemical vapour deposition of poly(hydridosiloxane) films

“…Refs. [11][12][13], and that (ii) IR laser-induced thermolysis of hexamethyldisiloxane 14,15 occurring strictly in the gas phase (with no contribution from the cold reactor surface) is controlled by cleavage of the Si-C bond. These findings can only be explained by an enhancement of Si-O cleavage via heterogeneous steps on the hot reactor surface.…”

Laser‐induced synthesis of iron–iron oxide/methylmethoxysilicone nanocomposite

“…These decompositions occur in a small, well-confined irradiation volume, defined by the intersection of the laser beam with the inlet gas flow, and have different courses. The IR laser decomposition of Fe(CO) 5 results 21 -25 in the formation of elemental iron and CO, whereas the decomposition of (CH 3 ) 3 SiOCH 3 proceeds 45 via initial cleavage of the Si-C and O-C bonds to produce dimethylsilanone transients which then yield 46 into methylsilicone polymer.…”