Abstract:Laser-induced damage in two types of silicon photosensor array has been studied. The samples were MOS CCD time delay integration (TDI) sensors with a 2048×96 element array of pixels and CID photodiode arrays of 512×1 pixels. The laser source was a Q-switched 1064 nm Nd:YAG laser (10 Hz rep rate, 10 ns pulses with a 250 μm spot radius). Tests for morphological and electrical damage to the CCD arrays have been reported previously. In new experiments, the micro-damage morphology is examined and correlated with bo… Show more
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