Laser-induced damage in ZnSe

Abstract

Pulsed laser damage in CVD-grown ZnSe has been studied at 1.06 and 10.6 μ. At 1.06 μ the intrinsic damage intensity was measured to be 1.2 GW/cm2. Damage at 10.6 μ was observed to be the result of inclusion absorption with the damage intensity dependent on focused beam diameter. A statistical model of inclusion damage is developed to account for this dependence. By comparing the predictions of the model to damage intensities measured under two conditions of external focusing, the average density of potentially damaging inclusions is calculated to be about 107 cm−3.

Spectroscopic Studies of ZnSe Crystals Subjected to Laser Irradiation

“…Highly pure, specially undoped single crystal zinc selenide has long been in use as a basic and promising material for optical components operating under conditions of transmission of high-intensity laser radiation fluxes [1,2]. Compared to other appropriate materials (Ge, GaAs, BaF 2 , KCl, NaCl), ZnSe is advantageously distinguished for its low coefficient of bulk absorption (a = 2 Â 10 ± ±3 to 2 Â 10 -4 cm ± ±1 at l 10.6 mm which is the operating wavelength of a CO 2 -laser), high transparency for a wide wavelength range and thermostability of optical parameters [3].…”