Laser‐Induced Creation of Antiferromagnetic 180‐Degree Domains in NiO/Pt Bilayers

Meer, Hendrik; Wust, Stephan; Schmitt, Christin; Herrgen, Paul; Fuhrmann, Felix; Hirtle, Steffen; Bednarz, Beatrice; Rajan, Adithya; Ramos, Rafael; Niño, Miguel Ángel; Foerster, Michael; Kronast, Florian; Kleibert, Armin; Rethfeld, Baerbel; Saitoh, Eiji; Stadtmüller, Benjamin; Aeschlimann, Martin; Kläui, Mathias

doi:10.1002/adfm.202213536

Cited by 3 publications

(3 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, laser pulses have been shown to modify the structure of AFM DWs, creating antiferromagnetic 180 • domains in NiO/Pt bilayers [38]. Here, we investigate the possibility of influencing the AFM DW structure in virgin NiO films by the application of a broadband (10 MHz-20 GHz) microwaves (MW) with power up to 5 dBm and an in-plane magnetic field up to 3 kOe at room temperature.…”

Section: Of 16mentioning

confidence: 99%

Microwave Field Induced Changes in Raman Modes and Magnetic Force Images of Antiferromagnetic NiO Films

Caso,

Serrano,

Jaafar

et al. 2023

Preprint

View full text Add to dashboard Cite

Effective control of domain walls or magnetic textures in antiferromagnets promises to enable robust, fast, and non-volatile memories. The lack of net magnetic moment in antiferromagnets implies the need for creative ways to achieve such a manipulation. Here, we investigate changes in magnetic force microscopy (MFM) imaging and in magnon-related mode in Raman spectroscopy of virgin NiO films under a microwave pump. After the MFM and Raman studies, a combined action of broadband microwave (0.01-20 GHz, power scanned from −20 to 5 dBm) and magnetic field (up to 3 kOe) were applied to virgin epitaxial (111) NiO and (100) NiO films grown on (0001) Al2O3 and (100) MgO substrates, following which the MFM and Raman studies were repeated. We observed a suppression of the magnon-related Raman mode subsequent to the microwave exposure. Based on MFM imaging, this effect appears to be caused by the suppression of large antiferromagnetic domain walls due to the possible excitation of antiferromagnetic spin oscillations localized within the antiferromagnetic domain walls.

show abstract

Section: Of 16mentioning

confidence: 99%

Microwave Field Induced Changes in Raman Modes and Magnetic Force Images of Antiferromagnetic NiO Films

Caso,

Serrano,

Jaafar

et al. 2023

Preprint

View full text Add to dashboard Cite

show abstract

“…Recently, laser pulses have been shown to be capable of modifying the structure of AFM DWs, creating antiferromagnetic 180 • domains in NiO/Pt bilayers [38]. In this study, we investigated the possibility of influencing the AFM DW structure in virgin NiO films via the application of broadband (10 MHz-20 GHz) microwaves (MW) with a power up to 5 dBm and an in-plane magnetic field up to 3 kOe at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Microwave Field-Induced Changes in Raman Modes and Magnetic Force Images of Antiferromagnetic NiO Films

Caso,

Serrano,

Jaafar

et al. 2024

Condensed Matter

View full text Add to dashboard Cite

Effective control of domain walls or magnetic textures in antiferromagnets promises to enable robust, fast, and nonvolatile memories. The lack of net magnetic moment in antiferromagnets implies the need for creative ways to achieve such a manipulation. We conducted a study to investigate changes in magnetic force microscopy (MFM) imaging and in the magnon-related mode in Raman spectroscopy of virgin NiO films under a microwave pump. After MFM and Raman studies were conducted, a combined action of broadband microwave (0.01–20 GHz, power scanned from −20 to 5 dBm) and magnetic field (up to 3 kOe) were applied to virgin epitaxial (111) NiO and (100) NiO films grown on (0001) Al2O3 and (100) MgO substrates, following which the MFM and Raman studies were repeated. We observed a suppression of the magnon-related Raman mode subsequent to the microwave exposure. Based on MFM imaging, this effect appeared to be caused by the suppression of large antiferromagnetic domain walls due to the possible excitation of antiferromagnetic spin oscillations localized within the antiferromagnetic domain walls.

show abstract

“…It belongs to the family of strongly correlated electron systems and is classified as an intermediate charge transfer insulator as per the Zaanen-Sawatsky-Allen classification scheme [7]. Several works have reported using NiO as a potential candidate material in the field of AFM spintronics where the moments are manipulated electrically or optically to produce fast response of the spin system to the applied external stimuli [8][9][10][11]. However, such works require precise and controlled synthesis of well-ordered single crystalline AFM materials to study the transport properties and the magnetization dynamics.…”

Section: Introductionmentioning

confidence: 99%

NiO thin films fabricated using spray-pyrolysis technique: structural and optical characterization and ultrafast charge dynamics studies

Das,

Canto-Aguilar,

Tapani

et al. 2024

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Nickel (II) oxide, NiO, is a wide band gap Mott insulator characterized by strong Coulomb repulsion between d-electrons and displays antiferromagnetic order at room temperature. NiO has gained attention in recent years as a very promising candidate for applications in a broad set of areas, including chemistry and metallurgy to spintronics and energy harvesting. Here, we report on the fabrication of polycrystalline NiO using spray-pyrolysis technique, which is a deposition technique able to produce quite uniform films of pure and crystalline materials without the need of high vacuum or inert atmospheres. The composition and structure of the NiO thin films were then studied using x-ray diffraction, and atomic force and scanning electron microscopies (SEM). The phononic and magnonic properties of the NiO thin films were also studied via Raman spectroscopy, and the ultrafast electron dynamics by using optical pump probe spectroscopy. We found that the NiO samples display the same phonon and magnon excitations expected for single crystal NiO at room temperature, and that electron dynamics in our system is like those of previously reported NiO mono- and polycrystalline systems synthesized using different techniques. These results prove that spray-pyrolysis can be used as affordable and large-scale fabrication technique to synthesize strongly correlated materials for a large set of applications.

show abstract

Laser‐Induced Creation of Antiferromagnetic 180‐Degree Domains in NiO/Pt Bilayers

Cited by 3 publications

References 43 publications

Microwave Field Induced Changes in Raman Modes and Magnetic Force Images of Antiferromagnetic NiO Films

Microwave Field Induced Changes in Raman Modes and Magnetic Force Images of Antiferromagnetic NiO Films

Microwave Field-Induced Changes in Raman Modes and Magnetic Force Images of Antiferromagnetic NiO Films

NiO thin films fabricated using spray-pyrolysis technique: structural and optical characterization and ultrafast charge dynamics studies

Contact Info

Product

Resources

About