Laser generation in polycrystalline Cr<sup>2+</sup>:ZnSe with undoped faces

Савин, Д. В.; Гаврищук, Е. М.; Иконников, В. Б.; Eremeykin, O.N.; Егоров, А. С.

doi:10.1070/qe2015v045n01abeh015712

Cited by 15 publications

(8 citation statements)

References 7 publications

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“…proposed in [4] with a simultaneous decrease in Fe 2+ ion concentration through the synthesis of Fe 2+ :ZnSe samples with several doped layers using the technology developed by the authors [9,10] for polycrystalline active elements based on Cr 2+ :ZnSe. In such a sample Fe 2+ :ZnSe layers are interleaved with ZnSe ones.…”

Section: Laser Properties Of Fe 2+ :Znse Fabricated By Solid-state Di...mentioning

confidence: 99%

Laser properties of Fe²⁺:ZnSe fabricated by solid-state diffusion bonding

et al. 2018

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The characteristics of an Fe 2+ :ZnSe laser at room temperature and its active elements with undoped faces were studied. Polycrystalline elements with one or two diffusion-doped internal layers were obtained by the solid-state diffusion bonding technique applied to chemical vapor deposition grown ZnSe plates preliminary doped with Fe 2+ ions in the process of hot isostatic pressing. A non-chain electric-discharge HF laser was used to pump the crystals. It was demonstrated that increasing the number of doped layers allows increasing the maximum diameter of the pump radiation spot and the pump energy without the appearance of transversal parasitic oscillation. For the two-layer-doped active element with a diameter of 20 mm an output energy of 480 mJ was achieved with 37% total efficiency with respect to the absorbed energy. The obtained results demonstrate the potential of the developed technology for fabrication of active elements by the solid-state diffusion bonding technique combined with the hot isostatic pressing treatment for efficient IR lasers based on chalcogenides doped with transition metal ions.

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Section: Laser Properties Of Fe 2+ :Znse Fabricated By Solid-state Di...mentioning

confidence: 99%

Laser properties of Fe²⁺:ZnSe fabricated by solid-state diffusion bonding

et al. 2018

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“…The ZnSe crystals doped with Fe 2+ and Cr 2+ are used as an active medium for solid state laser developed for mid-IR spectral range (3-5 µm). Recently, the lasing characteristics of ZnSe:Fe 2+ and ZnSe:Cr 2+ have been improved [1][2][3][4][5]. The medium parameters (optical transmission, absorption, and luminescence) depend on many factors including the dopant and its concentration, as well as on the nature of intrinsic and impurity defects.…”

Section: Introductionmentioning

confidence: 99%

The Influence of Chromium Thermal-Diffusion-Based Doping on the Spatial Distribution of Luminescence Intensity in ZnSe

et al. 2019

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We have studied the influence of chromium doping of ZnSe crystals at 1250 • C on the spatial distribution of luminescence in the spectral range of 0.44 to 0.73 µm. It is expected that several types of defective-impurity centers are formed due to the doping process. Centers of at least one type demonstrate complex distribution and lead to formation of area with high intensity luminescence looking like a bright strip parallel to doping surface.

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“…Nevertheless, their generation efficiency is considerably limited by the influence of the thermal lens formed as a result of thermo-optical distortions of the crystal lattice [8,9]. One possible solution to this problem is to use polycrystalline active elements with an inhomogeneous distribution of the alloying component [10][11][12]. For instance, it was demonstrated that Cr 2+ :ZnSe samples with undoped faces had a high surface breakdown resistance [12].…”

Section: Introductionmentioning

confidence: 99%

Doping profile influence on a polycrystalline Cr²⁺:ZnSe laser efficiency

et al. 2018

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Cr2+:ZnSe polycrystalline active elements were fabricated, with different distribution profiles of Cr ions concentration over their thicknesses and an equal absorption at a pump wavelength of 1.9 µm. The lasing characteristics of the obtained samples in short cavity schemes were determined, using a CW Tm3+-doped fiber laser and a Tm3+:YLF pulsed laser as the sources of pumping. There was found to be a correlation between the generation slope efficiency and the shape of the concentration profile. It was determined that bilateral doping samples achieved better laser performance. The maximum values of the slope efficiencies with respect to the absorbed power were η =73% in the pulse-periodic mode, and η = 37% in the continuous-wave mode.

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Laser generation in polycrystalline Cr²⁺:ZnSe with undoped faces

Cited by 15 publications

References 7 publications

Laser properties of Fe²⁺:ZnSe fabricated by solid-state diffusion bonding

Laser properties of Fe²⁺:ZnSe fabricated by solid-state diffusion bonding

The Influence of Chromium Thermal-Diffusion-Based Doping on the Spatial Distribution of Luminescence Intensity in ZnSe

Doping profile influence on a polycrystalline Cr²⁺:ZnSe laser efficiency

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Laser generation in polycrystalline Cr2+:ZnSe with undoped faces

Cited by 15 publications

References 7 publications

Laser properties of Fe2+:ZnSe fabricated by solid-state diffusion bonding

Laser properties of Fe2+:ZnSe fabricated by solid-state diffusion bonding

The Influence of Chromium Thermal-Diffusion-Based Doping on the Spatial Distribution of Luminescence Intensity in ZnSe

Doping profile influence on a polycrystalline Cr2+:ZnSe laser efficiency

Contact Info

Product

Resources

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Laser generation in polycrystalline Cr²⁺:ZnSe with undoped faces

Laser properties of Fe²⁺:ZnSe fabricated by solid-state diffusion bonding

Laser properties of Fe²⁺:ZnSe fabricated by solid-state diffusion bonding

Doping profile influence on a polycrystalline Cr²⁺:ZnSe laser efficiency