Laser gain and current density in a disordered AlGaAs/GaAs quantum well

Li, E.H.; Chan, K. S.

doi:10.1049/el:19930824

Cited by 24 publications

(17 citation statements)

References 4 publications

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“…where denotes the current density at the edge within the contact area and is the effective-diffusion length of the injection carrier. In the photon rate equation, the effective optical gain is given by (18) The effective material loss in the active layer, and the spontaneous emission rate, are given by…”

Section: B Numerical Model Of Vcsel's Including Lateral Lossmentioning

confidence: 99%

“…In this section, the optical properties of the DFQW material are studied. The models given in [18] and [19] are utilized to calculate the optical gain and the refractive index of the DFQW material. In the models, the extent of interdiffusion is characterized by a diffusion length of impurities where 0Å represents the as-grown QW's, and the diffusion strength is increased with the magnitude of .…”

Section: A Optical Gain Spectrum and Refractive Index Profile Of Difmentioning

confidence: 99%

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Analysis and design of vertical-cavity surface-emitting lasers for self-sustained pulsation operation

1998

IEEE J. Quantum Electron.

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The generation mechanism of self-sustained pulsation in vertical-cavity surface-emitting lasers (VCSEL's) is analyzed with the influence of lateral loss effects, such as selffocusing, lateral diffraction loss, and spatial hole burning, taken into consideration. The condition for self-sustained pulsation is also derived in an analytical form. It is shown that the lateral loss effects have significant influence on the excitation of self-sustained pulsation, especially for devices with small size. Furthermore, the possibility of using diffused quantum-well (QW) structures in VCSEL's to enhance self-sustained pulsation is studied. It is found that by using diffused QW structures, the range of core area to obtain self-sustained pulsation is increased. In addition, peak power and repetition frequency of the pulses can also be improved.

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Section: B Numerical Model Of Vcsel's Including Lateral Lossmentioning

confidence: 99%

Section: A Optical Gain Spectrum and Refractive Index Profile Of Difmentioning

confidence: 99%

Analysis and design of vertical-cavity surface-emitting lasers for self-sustained pulsation operation

1998

IEEE J. Quantum Electron.

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“…The influence of interdiffusion on the refractive index and optical gain of the QW active layer can also be calculated using the diffusion length as the parameter. Detailed calculation of the optical gain and the refractive index of the QW active layer under interdiffusion can be found in [9] and [10].…”

Section: B Implantation and Thermal Annealingmentioning

confidence: 99%

Comprehensive modeling of diffused quantum-well vertical-cavity surface-emitting lasers

Man

1998

IEEE J. Select. Topics Quantum Electron.

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A numerical model for investigating the thermal, electrical, and optical characteristics of vertical-cavity surfaceemitting lasers (VCSEL's) with a diffused quantum-well (QW) structure is presented. In the model, the quasi-three-dimensional (quasi-3-D) distribution of temperature, voltage and optical fields as well as the quasi-two-dimensional (quasi-2-D) diffusion and recombination of carrier concentration inside the QW active layer are calculated in a self-consistent manner. In addition, the quasi-3-D distribution of implanted ions before and after thermal annealing are computed. The variation of electrical conductivity and absorption loss as well as the influence of impurity induced compositional disordering on the optical gain and refractive index of the QW active layer are also taken into consideration. Using this model, the steady-state characteristics of diffused QW VCSEL's are studied theoretically. It is shown that significant improvement of stable single-mode operation can be obtained using diffused QW structure.

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“…The DFQW can be modeled by an error function and the extent of interdiffusion is Characterized by a diffusion length, Ld (where L d = 0 represents the asgrown QW). The details of these calculations can be found in [4] and [SI. At a particular Ld and at an external carrier injection level, N , the TE net optical gain spectrum, G, is found to have a simple expression,…”

Section: Introductionmentioning

confidence: 99%

Proposed enhancement of side-mode suppression ratio in /spl lambda//4 shifted distributed feedback lasers with nonuniform diffused quantum wells

Yu¹,

Li²

1996

IEEE Photon. Technol. Lett.

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An enhancement of the side mode suppression ratio, by utilizing interdiffused quantum wells, of a X/4 shifted distributed feedback laser is demonstrated theoretically. It is found that by introducing a diffusion step along the longitudinal direction of the quantum-well active region, the suppression ratio can be improved significantly for large nL (>2.6) devices. The maxim~m power for single longitudinal mode operation is increased by more than 50 mW.

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Laser gain and current density in a disordered AlGaAs/GaAs quantum well

Cited by 24 publications

References 4 publications

Analysis and design of vertical-cavity surface-emitting lasers for self-sustained pulsation operation

Analysis and design of vertical-cavity surface-emitting lasers for self-sustained pulsation operation

Comprehensive modeling of diffused quantum-well vertical-cavity surface-emitting lasers

Proposed enhancement of side-mode suppression ratio in /spl lambda//4 shifted distributed feedback lasers with nonuniform diffused quantum wells

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