Laser epitaxy and properties of narrow-gap semiconductor layers

Plyatsko, S. V.; Gromovoj, Yu.S.; Sizov, Fiodor F.

doi:10.1016/0020-0891(91)90066-o

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Preparation Of Iv-vi Sl and Mqw1

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Cited by 8 publications

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“…The regimes used in [12] in the LAE method did not result in high quality IV-VI layers. However, it was shown in [57] that IV-VI layers of rather high quality with narrow diffraction peak half width (~ 40') can be obtained by this method if the substrates are kept at low temperature (Τs ≤ 150°C).…”

Section: Preparation Of Iv-vi Sl and Mqwmentioning

confidence: 99%