Laser-driven structural modifications and diffusion phenomena of plasmonic AlN/Ag stratified films

Abstract

Laser annealing (LA) of AlN/Ag multilayers was proven to be an effective process to control the structure and dispersion of Ag into the AlN resulting in intense coloration via the localized surface plasmon resonance, which is of particular importance for decorative applications.In this work we present a study of the structural changes occurring in various AlN/Ag multilayers after LA, in an effort to establish firm knowledge of the diffusion and re-nucleation mechanisms that occur during the laser process. We investigate the effect of the basic LA parameters, such as the laser wavelength (193 and 248 nm), fluence (400-700 mJ/cm 2 ), pressure (1 and 10 Bar) and number of pulses (1 and 2) and we show that the main processes is the Ag particle enhancement close to the film surface as a result of additive outidiffusion Ag and the formation of nanoparticles of varying size.

Photo-engineered optoelectronic properties of indium tin oxide via reactive laser annealing

“…The deviation between these reports and this work could may be due to the different thickness of the ITO film and the intermediate SiO 2 layer (acting as a thermal barrier and an optical spacer), and/or the growth process (solution versus sputtering) 16 , 17 , 41 . However, we also note that an increased ambient pressure is typically employed to suppress and/or eliminate sample ablation during LA 42 , 43 . We conclude that ReLA, at high pressure and up to and including in either H 2 in N 2 or O 2 , is a “low-stress” process and the modifications to the optoelectronic properties induced during ReLA cannot be explained through structural changes.…”

Photo-engineered optoelectronic properties of indium tin oxide via reactive laser annealing

“…16,17,41 However, we also note that an increased ambient pressure is typically employed to suppress and/or eliminate sample ablation during LA. 42,43 We conclude that ReLA, up to and including 125 mJcm −2 in either 5% H2 in N2 or 100% O2, is a "low-stress" process and the modifications to the optoelectronic properties induced during ReLA cannot be explained through structural changes.…”

Mechanisms and Dynamics of Layered Structure Formation During Co-Deposition of Binary Compound Thin Films

“…The phase separation through the bulk diffusion can result in the separation into pure phases if the diffusion coefficients within the bulk are high enough. This occurs not only during nanocomposite formation through the co-deposition of binary films but also may occur during post deposition processes, e.g., laser annealing when nanoparticles are formed [36]. Depending on the values of the diffusion coefficient, the contents of thin films components and surface segregation rate, multilayered structures and the patterns containing individual nanoparticles can be produced.…”