Laser doping for ohmic contacts in n-type Ge

Chiodi, F.; Chepelianskii, A. D.; Gardès, C.; Hallais, Géraldine; Bouchier, D.; Débarre, D.

doi:10.1063/1.4904416

Cited by 5 publications

(5 citation statements)

References 17 publications

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“…However, there are also studies achieving activated P concentrations above 1 • 10 20 cm −3 for specific RTA conditions [129,130]. In addition, similar activation levels were obtained by a coimplantation of Sb with RTA [131], the application of several implantation-RTA cycles [132], or generally by using LA [133][134][135].…”

Section: Other Group-iv Semiconductorsmentioning

confidence: 68%

A review of thermal processing in the subsecond range: semiconductors and beyond

Rebohle

Prucnal

Skorupa

2016

Semicond. Sci. Technol.

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Thermal processing in the subsecond range comprises modern, non-equilibrium annealing techniques which allow various material modifications at the surface without affecting the bulk. Flash lamp annealing (FLA) is one of the most diverse methods for short-time annealing with applications ranging from the classical field of semiconductor doping to the treatment of polymers and flexible substrates. It still continues to extend its use to other material classes and applications, and is becoming of interest for an increasing number of users. In this review we present a short, but comprehensive and consistent picture of the current state-of-the-art of FLA, sometimes also called pulsed light sintering. In the first part we take a closer look at the physical and technological background, namely the electrical and optical specifications of flash lamps, the resulting temperature profiles, and the corresponding implications for process-relevant parameters such as reproducibility and homogeneity. The second part briefly considers the various applications of FLA, starting with the classical task of defect minimization and ultrashallow junction formation in Si, followed by further applications in Si technology, namely in the fields of hyperdoping, crystallization of thin amorphous films, and photovoltaics. Subsequent chapters cover the topics of doping and crystallization in Ge and silicon carbide, doping of III-V semiconductors, diluted magnetic semiconductors, III-V nanocluster synthesis in Si, annealing of transparent conductive oxides and high-k materials, nanoclusters in dielectric matrices, and the use of FLA for flexible substrates.

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Section: Other Group-iv Semiconductorsmentioning

confidence: 68%

A review of thermal processing in the subsecond range: semiconductors and beyond

Rebohle

Prucnal

Skorupa

2016

Semicond. Sci. Technol.

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“…GILD [11,12] is performed in a ultra high vacuum reactor (∼10 −9 mbar) which insures a very low impurity level. A puff of the boron precursor gas, pure BCl 3 , is injected using a pulse valve onto the (100) oriented high resistivity n-type silicon surface to induce a pressure of ∼10 −5 mbar, just enough to saturate the chemisorption sites (figure 1(a)).…”

Section: Ultra-doping: Gildmentioning

confidence: 99%

“…For doping levels above 5 × 10 20 cm −3 , the doping value can be difficult to extract due to matrix effects. However, it was shown that using an oxygen primary beam, the variation of the relative ion yield is the same for B and Si, so that the matrix effect can be corrected by the comparison with the silicon signal and using the relative sensibility factor [12]. Moreover, only the secondary ions at high energy (>100 eV) were used for the analysis, as they are less sensitive to the chemical surrounding.…”

Section: Sims Analysismentioning

confidence: 99%

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STEM analysis of deformation and B distribution In nanosecond laser ultra-doped Si_1−xB_x

Hallais¹,

Patriarche²,

Desvignes³

et al. 2023

Semicond. Sci. Technol.

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We report on the structural properties of highly B-doped silicon (up to 10 at.% of active doping) realised by nanosecond laser doping. The crystalline quality, lattice deformation and B distribution profile of the doped layer are investigated by Scanning Transmission Electron Microscopy followed by High-Angle Annular Dark Field contrast studies and Geometrical Phase Analysis, and compared to the results of Secondary Ions Mass Spectrometry and Hall measurements. When increasing the active B concentration above 4 at.%, the fully strained, perfectly crystalline, Si:B layer starts showing dislocations and stacking faults. These only disappear around 8 at.% when the Si:B layer is well accommodated to the substrate. With increasing B incorporation, an increasing number of small precipitates is observed, together with filaments with a higher active B concentration and stacking faults. At the highest concentrations studied, large precipitates form, related to the decrease of active B concentration. The structural information, defect type and concentration, and active B distribution are connected to the initial increase and subsequent gradual loss of superconductivity.

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“…[18][19][20][21][22] Here we address both of these challenges by developing a new fabrication method for efficient silicon light-emitting diodes using an original doping technique, gas immersion laser doping (GILD), and investigate spin-dependent recombination in silicon LEDs (SiLEDs). The GILD process [23][24][25][26] allows us to reach doping levels well beyond the solubility threshold which, as we describe below, gives rise to efficient emission, while retaining the well-defined planar geometry necessary to align electric and magnetic fields. Using our SiLEDs, we find that when classical MR effects are suppressed, electroluminescence can be substantially enhanced under a magnetic field near room temperature.…”

Section: Introductionmentioning

confidence: 99%

Room temperature magneto-optic effect in silicon light-emitting diodes

et al. 2018

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In weakly spin–orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, e.g. on the electro-luminescence of molecular semiconductors. Although silicon has weak spin–orbit coupling, observing spin-dependent recombination through magneto-electroluminescence is challenging: silicon’s indirect band-gap causes an inefficient emission and it is difficult to separate spin-dependent phenomena from classical magneto-resistance effects. Here we overcome these challenges and measure magneto-electroluminescence in silicon light-emitting diodes fabricated via gas immersion laser doping. These devices allow us to achieve efficient emission while retaining a well-defined geometry, thus suppressing classical magnetoresistance effects to a few percent. We find that electroluminescence can be enhanced by up to 300% near room temperature in a seven Tesla magnetic field, showing that the control of the spin degree of freedom can have a strong impact on the efficiency of silicon LEDs.

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Laser doping for ohmic contacts in n-type Ge

Cited by 5 publications

References 17 publications

A review of thermal processing in the subsecond range: semiconductors and beyond

A review of thermal processing in the subsecond range: semiconductors and beyond

STEM analysis of deformation and B distribution In nanosecond laser ultra-doped Si_1−xB_x

Room temperature magneto-optic effect in silicon light-emitting diodes

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Laser doping for ohmic contacts in n-type Ge

Cited by 5 publications

References 17 publications

A review of thermal processing in the subsecond range: semiconductors and beyond

A review of thermal processing in the subsecond range: semiconductors and beyond

STEM analysis of deformation and B distribution In nanosecond laser ultra-doped Si1−xBx

Room temperature magneto-optic effect in silicon light-emitting diodes

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Product

Resources

About

STEM analysis of deformation and B distribution In nanosecond laser ultra-doped Si_1−xB_x