Laser Diode Facet Degradation Study

Schwarz, Ulrich; Schoedl, Thomas; Kümmler, V.; Lell, A.; Härle, V.

doi:10.1557/proc-798-y11.10

Cited by 3 publications

(1 citation statement)

References 6 publications

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“…In addition, higher power red AlInGaP lasers for high speed digital video disc (DVD) applications will also benefit from increased performance and reliability due to the nitride facet process reported in this article. It is of interest also to notice in recent reports that even III-N (Al-Ga-In-Nitride) based lasers are sensitive to facet degradation and react to changes of operating atmosphere (from nitrogen to ambient air) when equipped with as cleaved facets [5][6][7] and also have a need of facet improvement. The suggested nitrogen based passivation process is applicable to all commonly used III-V materials systems (InAlGaP, InAlGaAs, InGaAsP, InGaAs, for telecom and industrial applications), III-N materials systems (GaN, AlGaN, InGaN, for optical memories, white and UV-light sources) and dilute nitrides (GaInNAs for future low cost telecom applications on GaAs substrates) and is applicable over the whole spectral range from below 300nm to beyond 2000nm.…”

Section: Introductionmentioning

confidence: 99%

Nitride facet passivation raises reliability, COMD, and enables high-temperature operation of InGaAsP, InGaAs, and InAlGaAs lasers

Silfvenius¹,

Sun²,

Blixt³

et al. 2005

SPIE Proceedings

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The laser diode technology, underpinning applications such as data storage, industrial lasers and optical telecommunications, still suffers from reliability and longevity limitations, especially in high power applications. A main problem for these lasers arises from facet oxidation, leading to increased absorption, power degradation and COMD device failure. Typically, high power devices initially show a low linear degradation and after some 100 hours, the degradation accelerates in a nonlinear fashion, indicating a degradation runaway condition. This article reports performance and reliability improvements that are based on a process which atomically seals surfaces and eliminates oxidation by forming stable nitrides on laser facets. The dangling bond terminating technology suppresses accelerated degradation associated with optical density and heat at laser facets. The dangling bond termination is demonstrated by improved COMD, decreased degradation at CW operation and a constant linear degradation rate at different QW temperature conditions (nonlinear degradation indicates advancement in the oxidation/optical absorption/facet heating/oxidation spiral). The technology is applicable to a range of material systems and has previously been demonstrated on InAlGaAs and InGaAs (increased COMD to >270 and 470mW/µm respectively). The devices with the typically lowest COMD levels (AlInGaAs) show a remarkably low linear degradation rate of <0.5%/kh during at CW life test operation at 90˚C and a power level corresponding to 80W bar power. In addition to long term AlInGaAs laser life test results, this paper presents results on nitride facet passivation applied to 805nm InGaAsP devices, showing improved COMD to 400mW/µm and the initial CW life data confirms the general behavior of the previously life-tested InGaAs and InAlGaAs based devices.

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Section: Introductionmentioning

confidence: 99%

Nitride facet passivation raises reliability, COMD, and enables high-temperature operation of InGaAsP, InGaAs, and InAlGaAs lasers

Silfvenius¹,

Sun²,

Blixt³

et al. 2005

SPIE Proceedings

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High spatial resolution micro‐Raman temperature measurements of nitride devices (FETs and light emitters)

Kuball

Pomeroy

Rajasingam

et al. 2005

Physica Status Solidi (a)

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Knowledge of the temperature in the active area of III‐nitride semiconductor devices such as AlGaN/GaN HFETs is essential for optimizing device design, performance and reliability, however, direct measurement of this temperature is not readily achieved. Infrared techniques often employed to measure the temperature of an active device are not well suited for AlGaN/GaN HFETs due to their limited spatial resolution when compared with the only micron‐size source‐drain device openings. The novel use of micro‐Raman spectroscopy for in‐situ measurements of device temperature, i.e., self‐heating effects, in single‐ and multi‐finger AlGaN/GaN HFETs with micrometer‐size resolution is discussed. Effects of device design on device temperature are illustrated. Variations in device temperature over a full wafer are studied considering that device reliability is strongly affected by device temperature. Applications of the technique to opto‐electronic devices in particular to InGaN/GaN laser diodes are also presented. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Laser Diode Facet Degradation Study

Cited by 3 publications

References 6 publications

Nitride facet passivation raises reliability, COMD, and enables high-temperature operation of InGaAsP, InGaAs, and InAlGaAs lasers

Nitride facet passivation raises reliability, COMD, and enables high-temperature operation of InGaAsP, InGaAs, and InAlGaAs lasers

High spatial resolution micro‐Raman temperature measurements of nitride devices (FETs and light emitters)

Grundlegung: Untersuchungsobjekt und konzeptioneller Rahmen

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