Laser-Diode Based Scanning Force Microscope and Ultrafast Sampling Probe

Nees, John; Craig, Douglas L.; Hama, Soichi; Wakana, S.

doi:10.1364/ueo.1995.jwa3

Cited by 3 publications

(1 citation statement)

References 2 publications

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“…While the last few years have seen great advances in short-pulse solid-state laser technologies, most of these lasers cannot be locked to an arbitrary clock. In order to test circuits which have internal clocks or clock rates which vary the authors use a commercial gain-switched semiconductor laser [24]. This laser provides 30pJ pulses of lOOps duration at 800nm.…”

Section: O L T a G E M E A S U R E M E N T Using A S E M I C O N D mentioning

confidence: 99%

Ultrafast-ultrafine probing of high-speed electrical waveforms using a scanning force microscope with photoconductive gating

1996

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Picosecond photoconductivity in low-temperature-grown GaAs (LT GaAs) has been used to provide temporal resolution both in rigid probes and in scanning force microscope probes. This article reviews the fabrication and use of such probes. 2.5 ps temporal resolution and few microvolts sensitivity are obtained at arbitrary points on circuits with a spatial definition of 100 nm. Rigid probes are tested in application to analogue and digital circuits. As an alternative to electron beam testing, scanning force probes are applied to in situ imaging and waveform measurement. Finally, the use of time-resolved waveform analysis with scanning-force microscopy probes with semiconductor laser sources is demonstrated.

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Section: O L T a G E M E A S U R E M E N T Using A S E M I C O N D mentioning

confidence: 99%