Laser deposited cubic boron nitride films

Doll, Gary L.; Sell, Jeffrey A.; Salamanca‐Riba, L.; Ballal, A. K.

doi:10.1016/0008-6223(90)90318-s

Cited by 2 publications

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“…This has led to assumptions that the recombination reaction to form BN is not dominant in the plasma 11 and likely to occur at the substrate surface. 9 In selected cases, including this study, observation of the boron nitride radical can be resolved. Figure 4(b) shows a high resolution spectrum of several resolved BN peaks between 360 and 385 nm at 2600 ns after the laser pulse and in 50 mTorr of nitrogen.…”

Section: Resultsmentioning

confidence: 95%

“…Discovery of atomic B þ velocities close to the target exceeding 10 5 cm/s led to the hypothesis that this species is critical in BN thin film formation. Murray et al 8 and then Doll et al 9 both expanded on this by incorporating mass spectroscopy time of flight studies of the B þ ions and a more detailed optical emission spectroscopy at similar wavelengths, respectively. In the study by Murray et al, the formation of stoichiometric BN in an NH 3 environment was linked to the abundance of (B þ ) and (N þ ) with a hypothesis on BN formation in gas phase based on the cluster detection by mass-spectroscopy.…”

Section: Introductionmentioning

confidence: 98%

“…9,[13][14][15] For cubic BN phase formation, the utilization of high kinetic energy of laser ablated B and N species were critical, which their translational velocities were reported as high as 20-50 km/s depending on the background nitrogen pressure. 11 Observations of nitrogen specie chemistry at the substrate location and reactions at the substrate surface due to plume collisions with background gas and condensation surface were explored to a lesser degree.…”

Section: Introductionmentioning

confidence: 99%

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Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

Glavin

Muratore

Jespersen

et al. 2015

Journal of Applied Physics

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Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identify and track atomic neutral and ionized species including B þ , B*, N þ , N*, and molecular species including N 2 *, N 2 þ , and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N þ ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N þ ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good thicknesses uniformity over macroscopic areas. V C 2015 AIP Publishing LLC. [http://dx.

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Section: Resultsmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

Glavin

Muratore

Jespersen

et al. 2015

Journal of Applied Physics

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III-V nitrides for electronic and optoelectronic applications

Davis

1991

Proc. IEEE

374

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Continued development and commercialization of optoelectronic devices, including light-emitting diodes and semiconductor lasers produced from III-V gallium arsenide-based materials, has also generated interest in the much wider bandgap semiconductor mononitride materials containing boron, aluminum, gallium, and indium. The majority of the studies have been conducted on pure gallium nitride thin films having the wurtzite structure, and this emphasis continues to the present day. However, recent research has resulted in the fabrication of p-n junctions in cubic boron nitride, the deposition of cubic gallium nitride, as well as the fabrication of multilayer heterostructures and the formation of thin film solid solutions. Chemical vapor deposition (CVD) has usually been the technique of choice for thin film fabrication. However, more recently these materials have also been deposited by plasma-assisted CVD, reactive ionized-cluster beam deposition, and reactive and ionized molecular beam epitaxy. The objective of this paper will be to review the recent developments in all the III-V nitride thin film materials vis a vis electronic and optoelectronic applications. the development of these materials and devices made from them are also discussed. 11.

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Laser deposited cubic boron nitride films

Cited by 2 publications

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Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

III-V nitrides for electronic and optoelectronic applications

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