1975
DOI: 10.1016/0030-3992(75)90043-2
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Laser damage in germanium

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Cited by 28 publications
(10 citation statements)
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“…The maximum crystallization speed in Ge is reported to be about 10 4 cm/s [21]. If the melted layer is supercooled in a very short time compared to a characteristic time (scaling as the heated depth divided by crystallization speed), the processed region might transform into the crystalline phase [7]. For the electronic heating depth of 1 mm measured in this work, the recrystallization condition described above can be fulfilled.…”
Section: Article In Pressmentioning
confidence: 79%
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“…The maximum crystallization speed in Ge is reported to be about 10 4 cm/s [21]. If the melted layer is supercooled in a very short time compared to a characteristic time (scaling as the heated depth divided by crystallization speed), the processed region might transform into the crystalline phase [7]. For the electronic heating depth of 1 mm measured in this work, the recrystallization condition described above can be fulfilled.…”
Section: Article In Pressmentioning
confidence: 79%
“…With increasing the density of electrons at the laser fluence higher than 10.2 J/cm 2 , however, the electron heat diffusion process plays an important role in the ultrashort laser ablation [9]. In this condition, the cooling rate could be estimated to be about 2.4 Â 10 15 1C/s while the cooling time is 1.4 Â 10 À10 s [7]. The maximum crystallization speed in Ge is reported to be about 10 4 cm/s [21].…”
Section: Article In Pressmentioning
confidence: 97%
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“…The laser induced damage studies in terms of these parameters allow a complete characterization of the damage process in terms of the intrinsic or extrinsic thermophysical and metallurgical properties of the material. Laser induced damage studies in semiconductors like Si, Ge and GaAs have been reported for a wide range of pulse duration and laser wavelengths [1][2][3][4][5][6][7][8]. However, only a few laser induced damage studies have been reported on InSb at 0.69µm, 1.06µm, 5.3µm and 10.6µm wavelengths [9][10][11][12].…”
Section: Introductionmentioning
confidence: 99%
“…where the ripples have a periodicity close to the laser wavelength (Willis and Emmony, 1975). Furthermore, it is observed that the ripples orientation is strongly dependent on the beam polarization and this leads to an evolvement in a ripple model (Emmony et al, 1973;Gousheng et al, 1982).…”
Section: Introductionmentioning
confidence: 99%