Laser beam thermography of circuits in the particular case of passivated semiconductors

Quintard, Véronique; Deboy, G.; Dilhaire, S.; Phan, T.; Lewis, Dean; Claeys, W.

doi:10.1016/0167-9317(95)00351-7

Cited by 59 publications

(30 citation statements)

References 4 publications

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“…Unfortunately, the value of j is often only known for a few bulk materials at a precise wavelength under specific experimental conditions. Besides, in microelectronic devices, the structure, in particular the passivation layer thickness, has a great influence on this coefficient value and we cannot use the bulk material value [6]. As a consequence, every studied sample and every experimental set-up need a new calibration.…”

Section: Thermoreflectance Techniquementioning

confidence: 99%

See 1 more Smart Citation

Comparison of thermoreflectance and scanning thermal microscopy for microelectronic device temperature variation imaging: Calibration and resolution issues

Grauby¹,

Salhi²,

Lopez³

et al. 2008

Microelectronics Reliability

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Section: Thermoreflectance Techniquementioning

confidence: 99%

“…where R is the sample mean reflectivity and j is the thermoreflectance coefficient depending on the nature of the material, on the passivation layer thickness [6], on the light wavelength [7,8]. The reflectivity variation implies an intensity variation of the light reflected to the photodetector (CCD camera, photodiode).…”

Section: Thermoreflectance Techniquementioning

confidence: 99%

Comparison of thermoreflectance and scanning thermal microscopy for microelectronic device temperature variation imaging: Calibration and resolution issues

Grauby¹,

Salhi²,

Lopez³

et al. 2008

Microelectronics Reliability

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“…Laser reflectance modulation has been used to measure the temperature changes of microscale metal thin films [1], silicon (Si) integrated circuits [3] and to acquire timing signals from Si devices [4].…”

mentioning

confidence: 99%

Negative backside thermoreflectance modulation of microscale metal interconnects

Teo¹,

Chua²,

Koh³

et al. 2011

Electronics Letters

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“…The sensitivity of this change with temperature is quantified by the thermoreflectance coefficient, κ, which relates the change in reflectivity per unit change in temperature. Typically, κ is of order of 10 -4 -10 -6 K -1 and depends on the wavelength that is used to probe the surface [20][21][22][23].…”

Section: Principles and Technical Backgroundmentioning

confidence: 99%

“…The sensitivity of this change with temperature is determined by the thermoreflectance coefficient, κ, which relates the change in reflectivity per unit change in temperature. Typically, κ is on the order of 10 -4 -10 -6 K -1 and depends on the wavelength that is used to probe the surface [20][21][22][23]. In addition to being a purely optical, non-invasive technique, thermoreflectance has the potential for providing micron-scale spatial resolution and subnanosecond temporal resolution [6,[24][25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Noncontact surface thermometry for microsystems: LDRD final report.

Abel

Beecham

Graham

et al. 2006

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We describe a Laboratory Directed Research and Development (LDRD) effort to develop and apply laser-based thermometry diagnostics for obtaining spatially resolved temperature maps on working microelectromechanical systems (MEMS). The goal of the effort was to cultivate diagnostic approaches that could adequately resolve the extremely fine MEMS device features, required no modifications to MEMS device design, and which did not perturb the delicate operation of these extremely small devices. Two optical diagnostics were used in this study: microscale Raman spectroscopy and microscale thermoreflectance. Both methods use a low-energy, nonperturbing probe laser beam, whose arbitrary wavelength can be selected for a diffraction-limited focus that meets the need for micron-scale spatial resolution. Raman is exploited most frequently, as this technique provides a simple and unambiguous measure of the absolute device temperature for most any MEMS semiconductor or insulator material under steady state operation. Temperatures are obtained from the spectral position and width of readily isolated peaks in the measured Raman spectra with a maximum uncertainty near ±10 K and a spatial resolution of about 1 micron. Application of the Raman technique is demonstrated for V-shaped and flexure-style polycrystalline silicon electrothermal actuators, and for a GaN high-electron-mobility transistor. The potential of the Raman technique for simultaneous measurement of temperature and inplane stress in silicon MEMS is also demonstrated and future Raman-variant diagnostics for ultra spatiotemporal resolution probing are discussed. Microscale thermoreflectance has been developed as a complement for the primary Raman diagnostic. Thermoreflectance exploits the small-but-measurable temperature dependence of surface optical reflectivity for diagnostic purposes. The temperaturedependent reflectance behavior of bulk silicon, SUMMiT-V polycrystalline silicon films and metal surfaces is presented. The results for bulk silicon are applied to silicon-on-insulator (SOI) fabricated actuators, where measured temperatures with a maximum uncertainty near ±9 K, and 0.75-micron inplane spatial resolution, are achieved for the reflectance-based measurements. Reflectance-based temperatures are found to be in good agreement with Raman-measured temperatures from the same device. Constructive peer-reviews of this report were provided by Ed Piekos and Carlton Brooks. 4 ACKNOWLEDGEMENTS5

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Laser beam thermography of circuits in the particular case of passivated semiconductors

Cited by 59 publications

References 4 publications

Comparison of thermoreflectance and scanning thermal microscopy for microelectronic device temperature variation imaging: Calibration and resolution issues

Comparison of thermoreflectance and scanning thermal microscopy for microelectronic device temperature variation imaging: Calibration and resolution issues

Negative backside thermoreflectance modulation of microscale metal interconnects

Noncontact surface thermometry for microsystems: LDRD final report.

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