Abstract:HgCdTe is the preferred semiconductor for fabrication of high-performance infrared (IR) detectors. This material also typically contains multiple carrier species for charge transport, which makes characterisation of the mobility and concentration of each species particularly difficult. Accurate carrier transport characterisation can be achieved by quantitative mobility spectrum analysis of variable-magneticfield Hall and resistivity data, but this imposes certain conditions concerning sample uniformity and hom… Show more
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