Laser-Assisted Room-Temperature Film Growth Using a Constrained Pulsed Nozzle Expansion

Demchuk, Alexander; Cahill, John J.; Koplitz, Brent

doi:10.1021/cm9907209

Cited by 6 publications

(1 citation statement)

References 19 publications

(33 reference statements)

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“…At the heart of the MOCVD field lies a rich but complicated chemistry. Important molecular questions remain regarding the reactivity of gas−gas, gas−surface, and surface−surface species in growth environments, particularly for materials such as AlN or GaN. , Although laser-assisted film growth has been previously studied in our laboratory, it is not the primary subject of this paper. Rather, in the current work an excimer laser is used to initiate chemistry in a clustering, reactive environment.…”

Section: Introductionmentioning

confidence: 99%

Exploration of the Laser-Assisted Clustering and Reactivity of Trimethylaluminum with and without NH₃

2003

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This paper provides results concerning the clustering and laser-assisted reactivity in constrained pulsed gas expansions of trimethylaluminum (TMAl) with and without ammonia. In these experiments, TMAl is introduced with just an Ar buffer gas or co-expanded with ammonia into a high vacuum chamber through a dual-source pulsed nozzle assembly. Independent control of individual gas backing pressures is maintained, and the nozzle assembly can be cooled as well. The output of an ArF excimer laser (193 nm) is focused into the mixing and reaction region of the nozzle source, and a quadrupole mass spectrometer (QMS) is used to characterize the expansion products. Both pressure and laser power dependence studies are used to reveal the origins of individual mass spectral features. Under certain conditions, laser irradiation or expanding, neat TMAl results in the formation of (CH3)4 - x H2 - y Al2, where x = 0, 1 and y = 0, 1. During TMAl expansion with NH3, the parent ion signal for the Lewis acid−base adduct (CH3)3Al:NH3 is observed in the gas phase by the QMS. Laser photolysis of the TMAl/NH3 gas mixture produces reactions involving both precursor and adduct molecules. Also, the formation of a new (CH3)3AlNH2 product as a result of NH2 radical reactivity with the (CH3)3Al:NH3 adduct, i.e., (CH3)3Al:NH3 + NH2 → (CH3)3AlNH2 + NH3, is revealed. Diverse higher mass clusters with Al−N bonded nuclei, e.g., (CH3) k Al l (NH2) m (NH) n , have also been observed. Finally, a comparison of aluminum and gallium metal organic species reveals similar propensities for intermolecular association for the two metals.

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Section: Introductionmentioning

confidence: 99%

Exploration of the Laser-Assisted Clustering and Reactivity of Trimethylaluminum with and without NH₃

2003

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The Chemistry of the Group 13 Metals in the +3 Oxidation State: Simple Inorganic Compounds

Aldridge

2011

The Group 13 Metals Aluminium, Gallium, Indium and Thallium: Chemical Patterns and Peculiarities

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From “Parasitic” Association Reactions toward the Stoichiometry Controlled Gas Phase Synthesis of Nanoparticles: A Theoretically Driven Challenge for Experimentalists

Timoshkin

Schaefer

2002

The Chemical Record

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In the present record a model for the gas-phase reactions during the chemical vapor deposition (CVD) processes of group 13-15 materials is presented, based on the results of extensive quantum-chemical modeling. Thermodynamic criteria have been introduced to evaluate the importance of a range of association reactions. For the organometallic and hydride derivatives, association processes are found to be favorable both thermodynamically and kinetically. Formation of high mass association products takes place under CVD conditions, including laser-assisted CVD. Structural and thermodynamic properties of the most important ring and cluster intermediates have been predicted. The stoichiometry-controlled synthesis of the 13-15 ternary alloys and nanoparticles using cluster compounds as single-source precursors is predicted to be viable. The association pathway described may be generalized to the CVD reactions of many binary materials (12-16, 13-16, 13-15, 14-15, 14-16).

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Laser-Assisted Room-Temperature Film Growth Using a Constrained Pulsed Nozzle Expansion

Cited by 6 publications

References 19 publications

Exploration of the Laser-Assisted Clustering and Reactivity of Trimethylaluminum with and without NH₃

Exploration of the Laser-Assisted Clustering and Reactivity of Trimethylaluminum with and without NH₃

The Chemistry of the Group 13 Metals in the +3 Oxidation State: Simple Inorganic Compounds

From “Parasitic” Association Reactions toward the Stoichiometry Controlled Gas Phase Synthesis of Nanoparticles: A Theoretically Driven Challenge for Experimentalists

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Laser-Assisted Room-Temperature Film Growth Using a Constrained Pulsed Nozzle Expansion

Cited by 6 publications

References 19 publications

Exploration of the Laser-Assisted Clustering and Reactivity of Trimethylaluminum with and without NH3

Exploration of the Laser-Assisted Clustering and Reactivity of Trimethylaluminum with and without NH3

The Chemistry of the Group 13 Metals in the +3 Oxidation State: Simple Inorganic Compounds

From “Parasitic” Association Reactions toward the Stoichiometry Controlled Gas Phase Synthesis of Nanoparticles: A Theoretically Driven Challenge for Experimentalists

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Exploration of the Laser-Assisted Clustering and Reactivity of Trimethylaluminum with and without NH₃

Exploration of the Laser-Assisted Clustering and Reactivity of Trimethylaluminum with and without NH₃