Laser annealing enhanced the photophysical performance of Pt/n-PSi/ZnO/Pt-based photodetectors

Thahe, Asad A.; Ali, Basant A.; Bakhtiar, Hazri; Uday, M. B.; Hassan, Z.; Abdullah, M.J.; Qaeed, M.A.; Alqaraghuli, Hasan; Zaidan, Hussein Abd; Allam, Nageh K.

doi:10.1016/j.sse.2020.107821

Cited by 4 publications

(3 citation statements)

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“…Before thermal annealing, UV decay rate after UV inactivation was slow especially at operating temperature of 25 °C, but after thermal annealing decay rate becomes fast enough irrespective of operating temperature [29]. After annealing, elimination of deep trap states enhances the surface quality and increases the recovery rate [30].…”

Section: Resultsmentioning

confidence: 99%

ANNEALING EFFECT ON UV DETECTION PROPERTIES OF ZnO:Al STRUCTURES

Nagpal,

Chiriac,

Sereacov

et al. 2024

J. Eng. Sci.

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The aim of this study was to develop low-powered, highly selective UV sensor to continuously monitor personalized UV exposure as well as to study annealing effect on UV detection properties of the sensors. ZnO:Al structures were obtained by chemical growth method followed by thermal annealing at 625 °C for 2 h. The studied samples exhibit maximal UV response of 620/488 at 25 °C/50 °C to 370 nm UV radiation before/after annealing, respectively. Thermal annealing of sensor (250 °C for 1 h) led to improvement in fall time from 3860 seconds to 262 seconds at 25 °C and highest responsivity (~48 mA/W) came out for 370 nm wavelength at 75 °C operating temperatures. Consequently, excellent selectivity for 370 nm UV illumination can be ascribed as due to thermal annealing effect which increases the crystallinity, grain size, and roughness of the sensing film. The PL measurements reveals the suppression of structural defects, increase in intensity after annealing and enhanced UV response due to presence of Al content in films. Overall, these structures showed magnificent UV properties, before and especially after additional thermal annealing. UV sensing mechanism of such nanomaterial-based sensor were explained with physio-chemical processes take place on the surface of these structures. The obtained results on annealed ZnO:Al films-based devices is superior to reported performances of other nanostructures, proving new results for UV sensing applications at different operating temperatures in various fields.

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Section: Resultsmentioning

confidence: 99%

ANNEALING EFFECT ON UV DETECTION PROPERTIES OF ZnO:Al STRUCTURES

Nagpal,

Chiriac,

Sereacov

et al. 2024

J. Eng. Sci.

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“…These large defect concentrations lead to the difficulty of forming perfect Schottky contacts between metal and ZnO material, and so the type of electrical contact between the semiconductor and metal (Schottky contact) is not only related to the work function difference between a metal and a semiconductor but it may also be related to the electrode materials and the concentration of semiconductor defects and impurities (Mohammad et al, 2021). The high surface-area-to-volume ratio of the sample increases the absorption of light, which increases the current gain (Thahe et al, 2020). The UV detector device's responsivity (R), which was based on ZnO nanorods, was computed using the following equation (Mohammad et al, 2021):…”

Section: Ultraviolet Detection Measurementsmentioning

confidence: 99%

“…The high surface-area-to-volume ratio of the sample increases the absorption of light, which increases the current gain (Thahe et al , 2020). The UV detector device’s responsivity ( R ), which was based on ZnO nanorods, was computed using the following equation (Mohammad et al , 2021): where P op is the optical power of the UV (the incident optical power was 3.7 mW), A is the effective area of the device, which is 0.0592 cm 2 , ( I d ) is dark current and the photocurrent ( I ph ).…”

Section: Ultraviolet Detection Measurementsmentioning

confidence: 99%

Fabrication of UV ZnO NRS photodetector based on seeded silicon substrate via the drop-casting technique

Abed

Mohammad

Hassan

et al. 2022

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Purpose The purpose of this study is to fabricate an ultraviolet (UV) metal-semiconductor-metal (MSM) photodetector based on zinc oxide nanorods (ZnO NRs) grown on seeded silicon (Si) substrate that was prepared by a low-cost method (drop-casting technique). Design/methodology/approach The drop-casting method was used for the seed layer deposition, the hydrothermal method was used for the growth of ZnO NRs and subsequent fabrication of UV MSM photodetector was done using the direct current sputtering technique. The performance of the fabricated MSM devices was investigated by current–voltage (I–V) measurements. The photodetection mechanism of the fabricated device was discussed. Findings Semi-vertically high-density ZnO (NRs) were effectively produced with a preferential orientation along the (002) direction, and increased crystallinity is confirmed by X-ray diffraction analysis. Photoluminescence results show a high UV region. The fabricated MSM UV photodetector showed that the ZnO (NRs) MSM device has great stability over time, high photocurrent, good sensitivity and high responsivity under 365 nm wavelength illumination and 0 V, 1 V, 2 V and 3 V applied bias. The responsivity and sensitivity for the fabricated ZnO NRs UV photodetector are 0.015 A W-1, 0.383 A W-1, 1.290 A W-1 and 1.982 A W-1 and 15,030, 42.639, 100.173 and 334.029, respectively, under UV light (365 nm) illumination at (0 V, 1 V, 2 V and 3 V). Originality/value This paper uses the drop-casting technique and the hydrothermal method as simple and low-cost methods to fabricate and improve the ZnO NRs photodetector.

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