Laser annealing effects on Ga dopants for ZnO thin films for transparent conducting oxide applications

Jo, Gaehun; Koh, Jung‐Hyuk

doi:10.1016/j.ceramint.2018.12.096

Cited by 40 publications

(11 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The temperature-heating rate of the furnace was set to increase by 5 • C/min, and the annealing process to remove the impurities was carried out for 2 and 4 h, respectively. The condition to raise the temperature of the RTA process was designed at 5 • C per second and maintained for 15 min at each temperature [21]. It is mentioned that the color of the substrate changes to green when the spin-coating and hot plate process are performed, but if β-Ga 2 O 3 was obtained through annealing, the substrate changes transparently.…”

Section: Annealing Methods Under Various Condition Using Electric Furnace and Rta Processmentioning

confidence: 99%

Comparative Study of High-Temperature Annealed and RTA Process β-Ga2O3 Thin Film by Sol–Gel Process

et al. 2021

Self Cite

View full text Add to dashboard Cite

As a wide energy band gap semiconductor, a Ga2O3 thin film was prepared by the sol–gel process with different annealing processes. Since Ga2O3 is a type of metal oxide structure, an oxygen annealing process can be considered to remove oxygen defects. An effective oxygen annealing process can help form a β-Ga2O3 structure with reduced defects. In this study, different types of annealing effects for β-Ga2O3 were investigated and compared. An electric furnace process using thermal effect characteristics of and an Rapid Thermal Annealing (RTA) process applied with an infrared radiation light source were compared. Two and 4 h thermal annealing processes were conducted at 900 °C in the furnace. Meanwhile, to study the optical annealing effects, 2 h furnace at 900 °C + 15 min in rapid thermal annealing and only 15 min in rapid thermal annealing effects were compared, respectively. Through increasing the thermal annealing temperature and time, β-Ga2O3 can be formed even though a sol–gel process was employed in this experiment. An annealing temperature of at least 900 °C was required to form β-Ga2O3 thin film. Moreover, by introducing an RTA process just after the spinning process of thin film, a β-Ga2O3 thin film was formed on the sapphire substrates. Compared with the electric furnace process applied for 2 h, the RTA process performed in 15 min has a relatively short process time and results in similar structural and optical characteristics of a thin film. From the X-ray diffraction patterns and UV spectrometer analysis, optically annealed β-Ga2O3 thin films on the sapphire substrate showed a highly crystalized structure with a wide energy band gap of 4.8 eV.

show abstract

Section: Annealing Methods Under Various Condition Using Electric Furnace and Rta Processmentioning

confidence: 99%

Comparative Study of High-Temperature Annealed and RTA Process β-Ga2O3 Thin Film by Sol–Gel Process

et al. 2021

Self Cite

View full text Add to dashboard Cite

show abstract

“…2a inset, the optical transparency of both films is above 90% in the visible region. In the literature, there are studies 37,38 showing that optical transmittance decreases because the increase of undesirable defects in thin films causes light scattering. On the contrary, the dislocation density value, which is a measure of the amount of defects in the structure, tends to decrease compared to the value of undoped ZnO.…”

Section: Optical Propertiesmentioning

confidence: 99%

Investigation the Performance of Cr-Doped ZnO Nanocrystalline Thin Film in Photodiode Applications

Turşucu

Aydoğan

Koçyiğit

et al. 2022

JOM

View full text Add to dashboard Cite

Undoped and Cr-doped zinc oxide (ZnO) thin films were deposited on the glass and p-Si substrates by the chemical spray pyrolysis technique. The films were characterized by x-ray diffractometry (XRD) and UV-visible spectrometry, and electrical characterization was achieved by using the films as an interfacial layer between the Au and p-Si. The XRD results confirmed the undoped and Cr-doped ZnO thin film crystalline structures. UV-visible spectra provided the transmittance plots and band gap energy values. I-V measurements were performed on the fabricated Au/ZnO/p-Si and Au/ZnO:Cr/p-Si devices to determine the effect of the ZnO interfacial layer on their performance. Various junction parameters, such as the ideality factor, barrier height, and series resistance, were calculated from the I-V measurements by various techniques, and have been discussed in detail. A 100-mW/cm 2 power intensity light was exposed on the Au/ZnO:Cr/p-Si device to see the photodiode behavior as well as to determine light sensitivity parameters such as photosensitivity and detectivity. The results highlight that the Au/ZnO:Cr/p-Si device can be thought of for optoelectronic applications.

show abstract

“…Additionally, and for the purpose of this review, we are interested in the thermal effects induced upon LA, thus we are focusing our attention to the ns pulse regime; nevertheless. Nevertheless, the utilization of ps, fs, and CW lasers for metal‐oxide film processing is additionally reported. It is, therefore, worth addressing the connection between CW and pulsed LA, as a scanning CW process shares similar principles with pulsed LA albeit with significantly lower peak power, defined by the scanning speed and laser spot size rendering a ms interaction with the film (in contrast to the typical ns pulses provided by excimer lasers).…”

Section: Laser Annealingmentioning

confidence: 99%

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

View full text Add to dashboard Cite

(1 of 37)high mobility (µ) (even in amorphous phase), wide bandgap (transparent in the visible range), and the ability to be controllably doped. Importantly, they can be grown into thin films and various nanostructures with different scalable deposition techniques, including vacuum-based methods such as physical vapor deposition (PVD) [7,8] and chemical vapor deposition (CVD) [9] as well as solution-based processes such as spray [10] and spin coating. [11] Moreover, the resulting layers can be easily patterned using standard fabrication procedures and as such can be integrated into state-of-the-art processes for (opto)electronic applications. The above-mentioned capabilities have led to a plethora of applications such as switching backplanes for displays, transparent and flexible electronics, integrated circuits (ICs), photovoltaics (PVs), organic light-emitting diodes (OLEDs), capacitors, batteries, photocatalytic devices, electrochromics and memory devices, to name but a few. [8,[12][13][14] Because of their ability to be doped, their electronic properties can be tuned from dielectrics to semiconductors and conductors. This characteristic versatility has recently been exploited to stretch the range of their applications to new technological sectors, such as plasmonics in the near infrared and midinfrared spectral ranges. [12,15] One of the driving applications of metal oxides is in thinfilm transistors (TFTs) for large area electronics such as current driven optical displays and ICs. Following the early demonstrations, [16] most effort focused on the fabrication and processing of metal oxides TFTs paying particular attention to the device performance and applications. [1,5,6,17] Especially when processed over large areas, as in the case for display applications, the complexity to precisely control the device reliability and reproducibility becomes a challenging aspect of any TFT technology. To that respect, solution-based techniques progressed rapidly due to their lower cost and higher throughput compared to vacuum-based techniques. In both cases, the metal-oxide deposition has so far been limited to high processing temperatures (>250 °C) (Figure 1a) which renders the technology incompatible with inexpensive, temperature-sensitive substrates such as polymers, the material class of choice for various high throughput manufacturing techniques such as roll-to-roll (R2R) and sheet-to-sheet (S2S)Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional hightemperature thermal annealing, offering rapid manufacturing times and compatibility with temperature-sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal-oxide thin-film transistors (TFTs) are presented with particular emphasis on the use of various light sour...

show abstract

Laser annealing effects on Ga dopants for ZnO thin films for transparent conducting oxide applications

Cited by 40 publications

References 47 publications

Comparative Study of High-Temperature Annealed and RTA Process β-Ga2O3 Thin Film by Sol–Gel Process

Comparative Study of High-Temperature Annealed and RTA Process β-Ga2O3 Thin Film by Sol–Gel Process

Investigation the Performance of Cr-Doped ZnO Nanocrystalline Thin Film in Photodiode Applications

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Contact Info

Product

Resources

About