Laser annealing applications for semiconductor devices manufacturing

Huet, Karim

doi:10.1016/b978-0-12-820255-5.00008-8

Cited by 1 publication

(1 citation statement)

References 39 publications

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“…Laser annealing, in particular, is a very special kind of heat treatment frequently used for semiconductor devices, showing a quite different way to traditional thermal annealing. It can effectively remove lattice defects caused by ion implantation [ 25 , 26 , 27 ]. Additionally, laser annealing is a type of localized annealing that has been widely studied in device preparation because of its advantages, such as fast annealing speed, low heat accumulation, selectable annealing region, localized thermal effect, and good spatial resolution [ 28 , 29 ].…”

Section: Introductionmentioning

confidence: 99%

High-Performance Organic Field-Effect Transistors of Liquid Crystalline Organic Semiconductor by Laser Mapping Annealing

Huang,

Liu,

Bao

et al. 2024

Materials

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Organic semiconductors (OSCs), especially small molecule semiconductors, have received increasing attention due to their good designability and variability. Phase transitions and interfacial properties have a decisive influence on device performance. Here, 2-Dodecyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-12) devices are treated with low-power laser annealing, which is able to avoid the influence of the dewetting effect on the hole mobility of organic semiconductor materials. Ultraviolet ozone treatment and self-assembled monolayer treatment can improve the performance and stability of the device. Moreover, after low-temperature thermal annealing, the hole mobility of the device can even reach as high as 4.80 cm2 V−1 s−1, and we tested the optical response of the device to the ultraviolet wavelength and found that its maximum optical responsivity was 8.2 AW−1.

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