Laser-Activated Luminescence of BaAl<sub>2</sub>O<sub>4</sub>:Eu

Engelsen, Daniel den; Fern, George R.; Ireland, Terry G.; Silver, Jack

doi:10.1149/2162-8777/ab682c

Cited by 12 publications

(9 citation statements)

References 33 publications

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“…In a follow-up work we shall report Raman spectra of BaAl 2 O 4 , which will provide more evidence in support of the scheme we put forward in Fig. 11 [38].…”

supporting

confidence: 54%

“…These measurements were done to check the Eu doping concentration of the samples defined in Table 2. The laser-Raman measurements of these materials are described in detail in a separate paper [38] and will not be described herein. The method to determine the Eu concentration is based on the ratio between the spectral radiances of the strong Eu 3+ 5 D 0 → 7 F 2 transition and the lattice vibration of BaAl 2 O 4 at a Raman Shift of 243 cm −1 .…”

Section: Characterisation and Spectroscopymentioning

confidence: 99%

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Photoluminescence and cathodoluminescence of BaAl₂O₄:Eu²⁺ and undoped BaAl₂O₄: evidence for F-centres

Engelsen¹,

Fern²,

Ireland³

et al. 2020

Opt. Mater. Express

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In this article the photoluminescence (PL) and cathodoluminescence (CL) of undoped BaAl 2 O 4 and BaAl 2 O 4 doped with 500 ppm and 3 mol% Eu 2+ is described. The most important results from the CL measurements are: (1) Undoped BaAl 2 O 4 manifested intrinsic CL at 460 nm, which increased at low temperature and did not change significantly upon exposure to the e-beam; (2) Doping BaAl 2 O 4 with Eu 2+ changed the character of the intrinsic luminescence band: it became more sensitive to temperature variations and the band experienced a blue shift to ∼425 nm; (3) electron beam (e-beam) exposure of Ba 0.97 Eu 0.03 Al 2 O 4 at low temperature increased the 425 nm band strongly while the Eu 2+ emission at ∼500 nm decreased by about 70%. The Eu 2+ emission band was symmetric, indicating that BaAl 2 O 4 :Eu has changed to the P6 3 22 phase upon e-beam exposure at low temperature; (4) We have identified the 460 nm band in undoped BaAl 2 O 4 and the 425 nm band in BaAl 2 O 4 :Eu 2+ with F-centre luminescence, corresponding to the F-centre emission in α-Al 2 O 3. The evidence for the assignment of the 425 nm band in BaAl 2 O 4 :Eu 2+ is the spectacular increase of the spectral radiance at 425 nm by e-beam exposure at 200 keV and low temperature. A preliminary model is presented that explains the results. The PL from BaAl 2 O 4 :Eu 2+ quenched at the rather low temperature of 140°C; this observation is explained in terms of thermal ionization of the Eu 2+ ion.

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“…In a follow-up work we shall report Raman spectra of BaAl 2 O 4 , which will provide more evidence in support of the scheme we put forward in Fig. 11 [38].…”

supporting

confidence: 54%

Section: Characterisation and Spectroscopymentioning

confidence: 99%

Photoluminescence and cathodoluminescence of BaAl₂O₄:Eu²⁺ and undoped BaAl₂O₄: evidence for F-centres

Engelsen¹,

Fern²,

Ireland³

et al. 2020

Opt. Mater. Express

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“…In the present material, BaAl 2 O 3 :Eu 3+ , showed very weak afterglow properties and this might be due to low densities of intrinsic defects and two [Eu 3+ ] • Ba positive electron traps located at shallower levels in the host structure. The excitation levels of Eu 3+ were also located at a deeper level from the CB of the host structure [56]. The afterglow of these samples were also recorded 2 months after γ-ray irradiation.…”

Section: 22mentioning

confidence: 89%

Charge carrier trapping processes in un-doped and BaAl₂O₄:Eu³⁺ nanophosphor for thermoluminescent dosimeter applications

Shivaramu

Coetsee

Roos

et al. 2020

J. Phys. D: Appl. Phys.

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The thermoluminescence (TL) mechanism for un-doped and europium (Eu 3+ ) doped barium aluminate (BaAl 2 O 4 ) were investigated and the location of energy levels for electrons/holes traps were determined in the aluminate for TL dosimetry applications. The solution combustion technique was used to synthesize the un-doped and Eu 3+ doped BaAl 2 O 4 nanopowders. X-ray diffraction showed a hexagonal crystal structure with the space group P6 3 . The average crystallite size were found to be 50 nm and between 41 and 61 nm for un-doped and doped samples. Scanning electron microscopy showed irregular spherical and needle shapes for the un-doped and doped samples. The Kubelka-Munk function was used to calculate the optical bandgap values of 5.47 and 5.26 eV, for the un-doped and doped samples, from the diffuse reflectance spectra. The fitted x-ray photoelectron spectroscopy data demonstrated that Ba occupied two different sites, Ba1 and Ba2. Time-of-flight secondary ion mass spectroscopy in spectral mode showed the formation of the crystal lattice with the presence of the dopant. The photoluminescent and cathodoluminescent spectra were characterized by the 5 D 0 -7 F J transitions (J = 1, 2, 3, 4) of Eu 3+ with the dominate emission obtained at J = 2. A strong TL glow curve with peaks at 397 and 453 K were observed for the un-doped and doped nanopowders after irradiation with γ-rays. The doped nanopowders showed the highest TL intensity because doping with Eu 3+ lead to the formation of additional trapped electrons and holes. The un-doped sample showed strong green (546 nm) TL emission due to the presence of a V k 3+ center. Whereas the Eu doped nanopowders exhibited strong TL emission at 615 nm.

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“…[7] Recent studies of materials similar to BaGa 2 O 4 ceramics in both undoped and doped forms are mainly focused on the study of their luminescent properties. [1,[8][9][10][11][12][13][14] These ceramics are a double oxide belonging to the quadrilateral frame topologies that exist in multiple polymorphs, which is important for luminescence studies because it exhibits luminescence without the inclusion of rare-earth ions. However, the most interesting is rare-earth-doped BaGa 2 O 4 ceramics.…”

Section: Introductionmentioning

confidence: 99%

Extended Positron‐Trapping Defects in the Eu³⁺‐Doped BaGa₂O₄Ceramics Studied by Positron Annihilation Lifetime Method

Klym

Karbovnyk

Luchechko

et al. 2022

Physica Status Solidi (b)

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The BaGa2O4 ceramics doped with Eu3+ ions (1, 3 and 4 mol%) are obtained by solid‐phase sintering. The evolution of defect‐related extended free volumes in the BaGa2O4 ceramics due to the increase of the content of Eu3+ ions has been studied using the positron annihilation lifetime (PAL) spectroscopy technique. It is established that the increase in the number of Eu3+ ions in the basic BaGa2O4 matrix leads to the agglomeration of free‐volume defects with their subsequent fragmentation. The presence of Eu3+ ions results in the expansion of nanosized pores and an increase in their number with their future fragmentation.

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Laser-Activated Luminescence of BaAl₂O₄:Eu

Cited by 12 publications

References 33 publications

Photoluminescence and cathodoluminescence of BaAl₂O₄:Eu²⁺ and undoped BaAl₂O₄: evidence for F-centres

Photoluminescence and cathodoluminescence of BaAl₂O₄:Eu²⁺ and undoped BaAl₂O₄: evidence for F-centres

Charge carrier trapping processes in un-doped and BaAl₂O₄:Eu³⁺ nanophosphor for thermoluminescent dosimeter applications

Extended Positron‐Trapping Defects in the Eu³⁺‐Doped BaGa₂O₄Ceramics Studied by Positron Annihilation Lifetime Method

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Laser-Activated Luminescence of BaAl2O4:Eu

Cited by 12 publications

References 33 publications

Photoluminescence and cathodoluminescence of BaAl2O4:Eu2+ and undoped BaAl2O4: evidence for F-centres

Photoluminescence and cathodoluminescence of BaAl2O4:Eu2+ and undoped BaAl2O4: evidence for F-centres

Charge carrier trapping processes in un-doped and BaAl2O4:Eu3+ nanophosphor for thermoluminescent dosimeter applications

Extended Positron‐Trapping Defects in the Eu3+‐Doped BaGa2O4Ceramics Studied by Positron Annihilation Lifetime Method

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Laser-Activated Luminescence of BaAl₂O₄:Eu

Photoluminescence and cathodoluminescence of BaAl₂O₄:Eu²⁺ and undoped BaAl₂O₄: evidence for F-centres

Photoluminescence and cathodoluminescence of BaAl₂O₄:Eu²⁺ and undoped BaAl₂O₄: evidence for F-centres

Charge carrier trapping processes in un-doped and BaAl₂O₄:Eu³⁺ nanophosphor for thermoluminescent dosimeter applications

Extended Positron‐Trapping Defects in the Eu³⁺‐Doped BaGa₂O₄Ceramics Studied by Positron Annihilation Lifetime Method