2002
DOI: 10.1103/physrevlett.89.287402
|View full text |Cite
|
Sign up to set email alerts
|

Laser Action of Trions in a Semiconductor Quantum Well

Abstract: We report on the observation of optical gain and lasing at the trion transition of n-doped ZnSe quantum wells. Specifically, the (stimulated) emission-absorption net rate of this transition is controlled by the difference of trion and electron occupation in momentum space. As the mass of the trion is larger than that of the electron, gain occurs on the low-energy side of the line center without degeneracy and inversion in the total particle numbers. The scenario is reminiscent of a three-level system. At highe… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
13
0

Year Published

2004
2004
2024
2024

Publication Types

Select...
4
4

Relationship

0
8

Authors

Journals

citations
Cited by 20 publications
(13 citation statements)
references
References 12 publications
0
13
0
Order By: Relevance
“…In fact, although this quasi-particle was theoretically predicted by Lampert 8 as early as 1958, trions were not experimentally observed for decades until their recent identification by photoluminescence (PL) spectroscopy in low-dimensional semiconductors at cryogenic temperatures. 3,5,6,9 One of the key factors that fundamentally limits trions from being a dominant species is their low binding energy (2–45 meV). 5,9,10 In low-dimensional semiconductors, such as single-walled carbon nanotubes (SWCNTs) and atomically thin two-dimensional (2D) transition metal dichalcogenides, the binding energy of trions increases due to the stronger Coulomb interactions at reduced dimensionality, allowing trions to be detected at room temperature.…”
Section: Introductionmentioning
confidence: 99%
“…In fact, although this quasi-particle was theoretically predicted by Lampert 8 as early as 1958, trions were not experimentally observed for decades until their recent identification by photoluminescence (PL) spectroscopy in low-dimensional semiconductors at cryogenic temperatures. 3,5,6,9 One of the key factors that fundamentally limits trions from being a dominant species is their low binding energy (2–45 meV). 5,9,10 In low-dimensional semiconductors, such as single-walled carbon nanotubes (SWCNTs) and atomically thin two-dimensional (2D) transition metal dichalcogenides, the binding energy of trions increases due to the stronger Coulomb interactions at reduced dimensionality, allowing trions to be detected at room temperature.…”
Section: Introductionmentioning
confidence: 99%
“…However, due to the development of nanostructure technology, it is now possible to experimentally study these trions because, all binding energies being enhanced by the reduction of dimensionality, trions, not seen in bulk samples, can appear as line well below the exciton line in the absorption spectra of doped semiconductor quantum wells (see for instance ref. [3][4][5][6][7][8][9]).…”
Section: Introductionmentioning
confidence: 99%
“…Recent study (7) shows an interesting relationship between the Mott density (MD) and the transparency density, at which optical gain or stimulated emission occurs, especially in low dimensional systems. Limited study of the stimulated emission through excitonic complexes in the intermediate density regimes has produced both scientific discoveries and technological breakthroughs in semiconductor photonics research, such as optical gain based on excitons (8,9), bi-excitons (10,11), trions (12,13), and polariton-scatterings (14) in III-V or II-VI compound semiconductors, or multi-exciton (15) and single-exciton (16) gain observed in nanocrystals. These relatively rare gain mechanisms have resulted lasing demonstrations at much lower pumping thresholds than conventional lasers which require higher pumping above MD.…”
mentioning
confidence: 99%
“…This behavior and the relative spectral features strongly suggest that the optical gain originates from trions. The physical mechanism of trionic gain was first studied in doped ZnSe quantum wells (12). According to this understanding, the trion system can be described by a "two-band" model: a ground state of a doped (e.g., n-type) material which is the conduction band, Ee, filled with a given number of electrons (which could be pre-doped due to defects, gate generated or intentional doping) and a upper trion band, ET, which has a much heavier effective mass (mT=2me+mh for electron-trions), as illustrated in Fig.…”
mentioning
confidence: 99%
See 1 more Smart Citation