Laser ablation thresholds of silicon for different pulse durations: theory and experiment

Jeschke, Harald O.; Garcia, Martín E.; Lenzner, M.; Bonse, Jörn; Krüger, Jörg; Kautek, Wolfgang

doi:10.1016/s0169-4332(02)00458-0

Cited by 134 publications

(70 citation statements)

References 18 publications

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“…Finally, an incorporation of the information on the transient changes in the interatomic bonding and thermophysical properties of the target material in the electronically excited state (Stages 1 and 2 in Fig. 3.1), revealed in electronic structure calculations and theoretical analysis, e.g., [23][24][25][26][27][28][29][30][31][32][33][34][35][36][131][132][133], into large-scale atomistic simulations is needed for investigation of the implications of the initial ultrafast atomic dynamics for the final outcome of short-pulse laser irradiation.…”

Section: Resultsmentioning

confidence: 99%

“…The description of the effect of the electronic excitation on the material properties is typically performed by means of computationally expensive electronic structure calculations, e.g., [23][24][25][26][27][28][29][30][31][32][33][34][35][36]. Simulations based on electronic structure calculations provide information on the changes in the interatomic bonding and the ultrafast atomic dynamics induced by the electronic excitation.…”

Section: Introductionmentioning

confidence: 99%

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Atomic/Molecular-Level Simulations of Laser–Materials Interactions

Zhigilei

Lin

Ivanov

et al. 2009

Laser-Surface Interactions for New Materials Production

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Summary. Molecular/atomic-level computer modeling of laser-materials interactions is playing an increasingly important role in the investigation of complex and highly nonequilibrium processes involved in short-pulse laser processing and surface modification. This chapter provides an overview of recent progress in the development of computational methods for simulation of laser interactions with organic materials and metals. The capabilities, advantages, and limitations of the molecular dynamics simulation technique are discussed and illustrated by representative examples. The results obtained in the investigations of the laser-induced generation and accumulation of crystal defects, mechanisms of laser melting, photomechanical effects and spallation, as well as phase explosion and massive material removal from the target (ablation) are outlined and related to the irradiation conditions and properties of the target material. The implications of the computational predictions for practical applications, as well as for the theoretical description of the laser-induced processes are discussed. IntroductionShort-pulse lasers are used in a diverse range of applications, from advanced materials processing, cutting, drilling, and surface micro-and nanostructuring [1,2] to pulsed-laser deposition of thin films and coatings [3], laser surgery [4,5], and artwork restoration [6,7], and to the exploration of the conditions for inertial confinement fusion, with the world's most energetic laser system being built at the National Ignition Facility at Lawrence Livermore National Laboratory [8]. At the fundamental science level, short-pulse laser irradiation has the ability to bring material into a highly nonequilibrium state and provides a unique opportunity to probe the material behavior under extreme conditions. In particular, optical pump-probe experiments have been used to investigate transient changes in the electronic structure of the irradiated surface with high (often subpicosecond) temporal resolution [9][10][11][12][13], whereas recent advances in time-resolved X-ray and electron diffraction

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Atomic/Molecular-Level Simulations of Laser–Materials Interactions

Zhigilei

Lin

Ivanov

et al. 2009

Laser-Surface Interactions for New Materials Production

View full text Add to dashboard Cite

show abstract

“…The advantage of this technique is that the measurements can be performed at fluences well above threshold for which the detected fingerprint signals are clearly detectable by farfield microscopy [7]. The actual physical mechanisms of laser ablation depend on the type of materials and the irradiation properties such as laser wavelength [10], pulse duration [13][14][15][16][17][18][19] and repetition rate [14,20]. Change in the repetition rate affects the ablation threshold in two respects.…”

Section: Introductionmentioning

confidence: 99%

Ultrashort laser pulse ablation of copper, silicon and gelatin: effect of the pulse duration on the ablation thresholds and the incubation coefficients

et al. 2016

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In this paper, the influence of the pulse duration on the ablation threshold and the incubation coefficient was investigated for three different types of materials: metal (copper), semiconductor (silicon) and biopolymer (gelatin). Ablation threshold values and the incubation coefficients have been measured for multiple Ti:sapphire laser pulses (3 to 1000 pulses) and for four different pulse durations (10, 30, 250 and 550 fs). The ablation threshold fluence was determined by extrapolation of curves from squared crater diameter versus fluence plots. For copper and silicon, the experiments were conducted in vacuum and for gelatin in air. For all materials, the ablation threshold fluence increases with the pulse duration. For copper, the threshold increases as s 0.05 , for silicon as s 0.12 and for gelatin as s 0.22 . By extrapolating the curves of the threshold fluence versus number of pulses, the single-shot threshold fluence was determined for each sample. For 30 fs pulses, the singleshot threshold fluences were found to be 0.79, 0.35, and 0.99 J/cm 2 and the incubation coefficients were found to be 0.75, 0.83 and 0.68 for copper, silicon and gelatin, respectively.

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“…Atomic-level simulations can help in reliable interpretation of experimental observations. Indeed, classical and ab initio molecular dynamics ͑MD͒ simulations have been used to study the mechanisms and kinetics of laser-induced nonthermal 17,18 and thermal [19][20][21] melting processes, the evolution of voids in photomechanical spallation, 22 as well as the dynamics of explosive material disintegration and ablation. 23,24 MD simula- .…”

Section: Introductionmentioning

confidence: 99%

Time-resolved diffraction profiles and atomic dynamics in short-pulse laser-induced structural transformations: Molecular dynamics study

2006

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The diffraction profiles and density correlation functions are calculated for transient atomic configurations generated in molecular dynamics simulations of a 20 nm Au film irradiated with 200 fs laser pulses of different intensity. The results of the calculations provide an opportunity to directly relate the detailed information on the atomic-level structural rearrangements available from the simulations to the diffraction spectra measured in time-resolved x-ray and electron diffraction experiments. Three processes are found to be responsible for the evolution of the diffraction profiles. During the first several picoseconds after the laser excitation, the decrease of the intensity of the diffraction peaks is largely due to the increasing amplitude of thermal atomic vibrations and can be well described by the Debye-Waller factor. The effect of thermoelastic deformation of the film prior to melting is reflected in shifts and splittings of the diffraction peaks, providing an opportunity for experimental probing of the ultrafast deformations. Finally, the onset of the melting process results in complete disappearance of the crystalline diffraction peaks. The homogeneous nucleation of a large number of liquid regions throughout the film is found to be more effective in reducing long-range correlations in atomic positions and diminishing the diffraction peaks as compared to the heterogeneous melting by melting front propagation. For the same fraction of atoms retaining the local crystalline environment, the diffraction peaks are more pronounced in heterogeneous melting. A detailed analysis of the real space correlations in atomic positions is also performed and the atomic-level picture behind the experimentally observed fast disappearance of the correlation peak corresponding to the second nearest neighbors in the fcc lattice during the laser heating and melting processes is revealed.

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Laser ablation thresholds of silicon for different pulse durations: theory and experiment

Cited by 134 publications

References 18 publications

Atomic/Molecular-Level Simulations of Laser–Materials Interactions

Atomic/Molecular-Level Simulations of Laser–Materials Interactions

Ultrashort laser pulse ablation of copper, silicon and gelatin: effect of the pulse duration on the ablation thresholds and the incubation coefficients

Time-resolved diffraction profiles and atomic dynamics in short-pulse laser-induced structural transformations: Molecular dynamics study

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