Laser Ablation of Highly Oriented Cdse Thin Films and Cdte/Cdse Multilayers on Silicon Substrate

Abstract

Laser ablation technique has been successfully used for the deposition of CdSe and CdTe/CdSe multilayers on Si(100) and Si(l11) substrates. X-ray analysis showed that CdSe/Si films were highly oriented. Their orientation changed from (100) to (002) by varying the substrate temperature from 473 to 673K. High orientation was also obtained on multilayered polycrystalline structures of CdSe and CdTe on Si(lll). Photoluminescence experiments have also been carried out on the deposited films.

Structural and optical parameters of films deposited on quartz substrates by laser ablation

“…A pulsed Nd:YAG laser operating at 532 nm with a repetition rate of 10 Hz, and with a pulse width of 10 ns, was used as light source. The laser fluence was fixed at about 10 J cm −2 to allow the monolayer deposition, while the substrate temperature was optimized at 400 • C. The experimental set-up of the deposition system was described in a previous work [12]. Briefly, the substrate was placed in an evacuated stainless steel chamber (residual pressure of 10 −6 mbar) and the laser beam was focused onto a rotating target at an oblique angle of 45 • to allow the plume expansion in the direction normal to the target surface.…”

“…One of the important features of this method is based on the possibility of maintaining the stoichiometry of the ablated target in the deposited layer. In recent papers [12][13][14][15], our group has demonstrated the PLA capability of obtaining high quality II-VI Cd compounds on different substrates such as silicon, gallium arsenide and quartz.…”