Laser Ablation Mechanism Of Silicon Nitride Layers In A Nanosecond UV Regime

Poulain, G.; Blanc, D.; Focsa, A.; Semmache, B.; Gauthier, M.; Pellegrin, Y.; Lemiti, M.

doi:10.1016/j.egypro.2012.07.103

Cited by 18 publications

(11 citation statements)

References 3 publications

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“…The ablation was achieved using a frequency tripled Nd:YAG laser (Rofin RSM 20E THG) with a Gaussian profile, a wavelength of 355 nm and a pulse duration of 10 ns [12]. The penetration depth of the UV laser in silicon was around 10 nm.…”

Section: Sample Preparation and Preliminary Characterizationmentioning

confidence: 99%

“…Laser ablation of dielectrics has been shown to result from the vaporization of the material due to heat [7,12]. The thermal expansion of the underlying substrate and its vaporization has also been used to explain SiO2 and SiNx ablation on a Si substrate [2].…”

Section: Ablation Mechanismmentioning

confidence: 99%

“…Modelling of a single laser pulse interaction with the dielectric coatings on a Si substrate was done using the commercial software COMSOL Multiphysics [12]. The heat-transfer equation was solved for the two structures Si/Al2O3 and Si/Al2O3/SiNx.…”

Section: Ablation Mechanismmentioning

confidence: 99%

“…From around 0.4 J.cm -2 upwards, although the dielectric layers are not necessarily ablated, the interface Si/dielectric is thermally affected. Indeed, melting of the silicon surface causes a deterioration of the Si/dielectric interface due to the thermal expansion of the silicon in its liquid phase, corresponding to the observed thermally affected zone [12].…”

Section: Ablation Mechanismmentioning

confidence: 99%

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Time-resolved photoluminescence for evaluating laser-induced damage during dielectric stack ablation in silicon solar cells

Parola

Blanc-Pélissier

Barbos

et al. 2016

Applied Surface Science

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Selective laser ablation of dielectric layers on crystalline silicon wafers was investigated for solar cell fabrication. Laser processing was performed on Al2O3, and bi-layers Al2O3/SiNX:H with a nanosecond UV laser at various energy densities ranging from 0.4 to 2 J.cm-2. Ablation threshold was correlated to the simulated temperature at the interface between the dielectric coatings and the silicon substrate. Laser-induced damage to the silicon substrate was evaluated by time-resolved photoluminescence. The minority carrier lifetime deduced from time-resolved photoluminescence was related to the depth of the heat affected zone in the substrate.

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Section: Sample Preparation and Preliminary Characterizationmentioning

confidence: 99%

Section: Ablation Mechanismmentioning

confidence: 99%

Section: Ablation Mechanismmentioning

confidence: 99%

Section: Ablation Mechanismmentioning

confidence: 99%

See 2 more Smart Citations

Time-resolved photoluminescence for evaluating laser-induced damage during dielectric stack ablation in silicon solar cells

Parola

Blanc-Pélissier

Barbos

et al. 2016

Applied Surface Science

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“…After the laserprocessed patterning process, nickel can be plated on the open region in the LINP process after the chemical etching process. The disappearance of the SiN x may be due to the liquefaction of the a-Si, causing the SiN x to collapse [17]. After oxide removal, the electron flow can penetrate through the thin a-Si layer to reduce nickel ions to form a nickel film because of larger current density.…”

Section: Case Bmentioning

confidence: 99%

The brand-new metallization patterning processes for plated solar cells

Yang

et al. 2015

Int. J. Energy Res.

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SUMMARYThis paper discusses two brand-new patterning methods for solar cell front metallization by using a layer of amorphous silicon (a-Si) and the laser processed patterning process. These methods have the advantages of simplicity, rapidity, and low cost for the mass production of plated solar cells and also have the potential to overcome the shortcomings of the existing complex processes for Ni/Cu plated cells. In this paper, we reveal the processes and show the metallization performance. The patterning results were disclosed and had the line width of about 45 μm in our experiment. The specific contact resistivity (ρ c ) between plated Ni and silicon wafer exceeded the order of 10 À4 Ω cm 2 . In addition, the patterning mechanisms are also proposed and discussed.

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UV 20W-class single-mode nanosecond pulse delivery using a vacuum-free/ambient air inhibited-coupling hollow-core fiber

Leroi

Gérôme

Didierjean³

et al. 2023

Appl. Phys. B

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Silica bers have been successful used to deliver high-power high-energy laser beam in the near-infrared and visible range but suffer from high absorption and color formation in the UV spectrum which disqualify then for such wavelength. Recently, the advances of inhibited-coupling hollow-core photonic crystal bers made them as an unique tool to transport UV radiation thanks to an ultralow overlap with the silica cladding and record losses down to 10 dB/km. By further optimizing such ber, we report in this letter a record single-mode delivery of 23.3 W (155 μJ) with 92% transmission from a 343 nm, 10 ns, 150 kHz laser source, corresponding to an improvement of the current state-of-the-art by two orders of magnitude.

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Laser Ablation Mechanism Of Silicon Nitride Layers In A Nanosecond UV Regime

Cited by 18 publications

References 3 publications

Time-resolved photoluminescence for evaluating laser-induced damage during dielectric stack ablation in silicon solar cells

Time-resolved photoluminescence for evaluating laser-induced damage during dielectric stack ablation in silicon solar cells

The brand-new metallization patterning processes for plated solar cells

UV 20W-class single-mode nanosecond pulse delivery using a vacuum-free/ambient air inhibited-coupling hollow-core fiber

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