Large valley polarization and the valley-dependent Hall effect in a Janus TiTeBr monolayer

Su, Bingwen; Peng, Xiao; Yan, Zhibo; Lin, Lin; Huang, Xiaokun; Liu, Jun-Ming

doi:10.1039/d4cp00318g

Phys. Chem. Chem. Phys.

2024

DOI: 10.1039/d4cp00318g

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Large valley polarization and the valley-dependent Hall effect in a Janus TiTeBr monolayer

Bingwen Su,

Xiao Peng,

Zhibo Yan

et al.

Abstract: Ferrovalley materials hold great promise for implementation of logic and memory devices in valleytronics. However, there have so far been limited ferrovalley materials exhibiting significant valley polarization and high Curie...

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2024

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Cited by 2 publications

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Prediction of the two-dimensional ferromagnetic semiconductor Janus 2H-ZrTeI monolayer with large valley and piezoelectric polarizations

Li,

Chen,

Yuan

et al. 2024

Nanoscale

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Prediction of the two-dimensional ferromagnetic semiconductor Janus 2H-ZrTeI monolayer with large valley and piezoelectric polarizations

Li,

Chen,

Yuan

et al. 2024

Nanoscale

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Ferrovalley and Quantum Anomalous Hall Effect in Janus TiTeCl Monolayer

Chang,

Zhang,

Deng

et al. 2024

Materials

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Ferrovalley materials are garnering significant interest for their potential roles in advancing information processing and enhancing data storage capabilities. This study utilizes first-principles calculations to determine that the Janus monolayer TiTeCl exhibits the properties of a ferrovalley semiconductor. This material demonstrates valley polarization with a notable valley splitting of 80 meV. Additionally, the Berry curvature has been computed across the first Brillouin zone of the monolayer TiTeCl. The research also highlights that topological phase transitions ranging from ferrovalley and half-valley metals to quantum anomalous Hall effect states can occur in monolayer TiTeCl under compressive strains ranging from −1% to 0%. Throughout these strain changes, monolayer TiTeCl maintains its ferromagnetic coupling. These characteristics make monolayer TiTeCl a promising candidate for the development of new valleytronic and topological devices.

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Large valley polarization and the valley-dependent Hall effect in a Janus TiTeBr monolayer

Abstract: Ferrovalley materials hold great promise for implementation of logic and memory devices in valleytronics. However, there have so far been limited ferrovalley materials exhibiting significant valley polarization and high Curie...

Cited by 2 publications

References 69 publications

Prediction of the two-dimensional ferromagnetic semiconductor Janus 2H-ZrTeI monolayer with large valley and piezoelectric polarizations

Prediction of the two-dimensional ferromagnetic semiconductor Janus 2H-ZrTeI monolayer with large valley and piezoelectric polarizations

Ferrovalley and Quantum Anomalous Hall Effect in Janus TiTeCl Monolayer

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