Large spin hall conductivity in low-symmetry semiconductor ZrSe3

Zhu, Yonghui; Chen, Qian; Liang, Jinxing; Tian, Mingming; Jiang, Wei; Wang, Jiachen; Wu, Huasheng; Li, Rongxin; Li, Shangkun; Huang, Zhaocong; Kou, Zhaoxia; Lv, Weiming; Zhang, Baoshun; Zeng, Zhongming; Zhai, Yufei

doi:10.1016/j.jallcom.2022.165579

Cited by 4 publications

(5 citation statements)

References 22 publications

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“…The crystal structure of ZrSe 3 is characterized by Raman spectroscopy with a 532 nm excitation laser. As shown in the inset in Figure b, three characteristic Raman peaks, A g 1 (178 cm –1 ), A g 2 (230 cm –1 ), and A g 3 (300 cm –1 ), are clearly observed, consistent with previous studies. , The polar plot of the angular-dependent intensities of these modes is presented in Figure c. All vibration modes have the same 2-fold symmetry, and the maximum relative intensity of these vibration modes appears when the excitation laser direction is parallel to the b axis of the exfoliated ZrSe 3 flake.…”

Section: Resultsmentioning

confidence: 99%

“…The frequency ranged from 3 to 9 GHz. Using the Lorentzian equation to fit mixing voltage ( V mix ) consisting of symmetric ( V S ) and antisymmetric ( V A ) components as follows: , V mix = V normalS normalΔ H 2 false( H − H res false) 2 + normalΔ H 2 + V normalA normalΔ H ( H − H res ) false( H − H res false) 2 + normalΔ H 2 we can obtain the ST-FMR resonance field ( H res ) and line width (Δ H ). Figure b shows the ST-FMR resonance field with different frequencies of ZrSe 3 /Cu ( t = 0, 1, and 2 nm)/Py samples obtained at φ = 45°.…”

Section: Resultsmentioning

confidence: 99%

“…The frequency ranged from 3 to 9 GHz. Using the Lorentzian equation to fit mixing voltage (V mix ) consisting of symmetric (V S ) and antisymmetric (V A ) components as follows: 24,26…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…Finally, a sample of ZrSe 3 (10 nm)/Py (10 nm) is obtained, as shown in Figure a. Besides, ZrSe 3 (10 nm)/Cu ( t = 1 and 2 nm)/Py (10 nm) is also prepared at the same sputtering condition for comparison …”

Section: Methodsmentioning

confidence: 99%

“…Besides, ZrSe 3 (10 nm)/Cu (t = 1 and 2 nm)/Py (10 nm) is also prepared at the same sputtering condition for comparison. 24 The crystal structure properties of bulk ZrSe 3 are characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The films are patterned into microstrips (45 μm length and 8 μm width) by lithography and Ar + ion beam milling and then a sputtering electrode in the shape of a coplanar waveguide by Ti (10 nm)/Au (110 nm).…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

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Interfacial Modulation of Spin–Orbit Torques Induced by Two-Dimensional van der Waals Material ZrSe₃

Cao,

Chen,

Zhu

et al. 2024

ACS Appl. Mater. Interfaces

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Two-dimensional van der Waals (2D vdW) materials are widely used in spin−orbit torque (SOT) devices. Recent studies have demonstrated the low crystal symmetry and large spin Hall conductivity of 2D vdW ZrSe 3 , indicating its potential applications in low-power SOT devices. Here, we study the interfacial contribution of SOTs and current-induced magnetization switching in the ZrSe 3 /Py (Ni 80 Fe 20 ) and ZrSe 3 /Cu/Py heterostructures. SOT efficiencies of samples are detected by the spin-torque ferromagnetic resonance (ST-FMR), and out-of-plane damping-like torque (τ B ) is observed. The ratio between τ B and the field-like torque (τ A ) decreases from 0.175 to 0.138 when inserting 1 nm Cu at the interface and then drops to 0.001 when the thickness of Cu intercalation is 2 nm, indicating that Cu intercalation inhibits the τ B component of SOT. Moreover, the SOT efficiency is increased from 3.05 to 5.21, which may be attributed to the Cu intercalation being beneficial to improve the interface between Py and ZrSe 3 . Theoretical calculation has shown that the Cu spacer can change the conductivity of ZrSe 3 from semiconductor to conductor, thereby decreasing the Schottky barrier and increasing the transmission efficiency of the spin current. Furthermore, magneto-optical Kerr effect (MOKE) microscopy is employed to verify the current-driven magnetization switching in these structures. In comparison to the ZrSe 3 /Py bilayer, the critical current density of ZrSe 3 /Cu/Py is reduced when inserting 1 nm Cu, demonstrating the higher SOT efficiency and lower power consumption in ZrSe 3 /Cu/Py structures.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…The frequency ranged from 3 to 9 GHz. Using the Lorentzian equation to fit mixing voltage (V mix ) consisting of symmetric (V S ) and antisymmetric (V A ) components as follows: 24,26…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: ■ Experimental Sectionmentioning

confidence: 99%

See 3 more Smart Citations

Interfacial Modulation of Spin–Orbit Torques Induced by Two-Dimensional van der Waals Material ZrSe₃

Cao,

Chen,

Zhu

et al. 2024

ACS Appl. Mater. Interfaces

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Symmetry breaking for current-induced magnetization switching

Liu

Zhao

Lin

et al. 2023

Applied Physics Reviews

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Electromagnetic phenomena, such as magnetization switching, are guided by parity and time-reversal symmetries. Magnetic field and magnetization are time-odd axial vectors. Therefore, the magnetic field can switch magnetization reversibly. In contrast, the electric field is a time-even polar vector that cannot directly switch magnetization. For magnetic recording, an electrical coil-generated local magnetic field is used to switch the magnetic bit. However, in order to integrate the magnetic functionality, e.g., nonvolatile magnetic memory with high speed and low energy consumption, into the chip, it is essential to implement the magnetization switching by an electrical current, where the current induces other axial vectors through spin-transfer torque or spin–orbit torque (SOT). As an energy-efficient tool of magnetization switching, current-induced SOT has been intensively studied for the past decade, which holds great promise in the next generation of magnetic memories and magnetic logic devices [A. Manchon et al., Rev. Mod. Phys. 91, 035004 (2019); X. Han et al., Appl. Phys. Lett. 118, 120502 (2021); C. Song et al., Prog. Mater. Sci. 118, 100761 (2021); Q. Shao et al., IEEE Trans. Magn. 57, 21076639 (2021); J. Ryu et al., Adv. Mater. 32, 1907148 (2020); Y. Cao et al., iScience 23, 101614 (2020)]. In this review, we will first give the basic principle of the symmetry considerations for current-induced magnetization switching. Then, different methods to break the mirror symmetry for deterministic SOT switching will be discussed, together with examples that contain recent progress. In the end, we will give a discussion on the challenges and perspectives of the symmetry designs for SOT, which aim to inspire future fundamental studies and device applications.

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Crystal Growth and Thermal Properties of Quasi-One-Dimensional van der Waals Material ZrSe3

Guo

Chen

2022

Micromachines

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ZrSe3 with a quasi-one-dimensional (quasi-1D) crystal structure belongs to the transition metal trichalcogenides (TMTCs) family. Owing to its unique optical, electrical, and optoelectrical properties, ZrSe3 is promising for applications in field effect transistors, photodetectors, and thermoelectrics. Compared with extensive studies of the above-mentioned physical properties, the thermal properties of ZrSe3 have not been experimentally investigated. Here, we report the crystal growth and thermal and optical properties of ZrSe3. Millimeter-sized single crystalline ZrSe3 flakes were prepared using a chemical vapor transport method. These flakes could be exfoliated into microribbons by liquid-phase exfoliation. The transmission electron microscope studies suggested that the obtained microribbons were single crystals along the chain axis. ZrSe3 exhibited a specific heat of 0.311 J g−1 K−1 at 300 K, close to the calculated value of the Dulong–Petit limit. The fitting of low-temperature specific heat led to a Debye temperature of 110 K and an average sound velocity of 2122 m s−1. The thermal conductivity of a polycrystalline ZrSe3 sample exhibited a maximum value of 10.4 ± 1.9 W m−1 K−1 at 40 K. The thermal conductivity decreased above 40 K and reached a room-temperature value of 5.4 ± 1.3 W m−1 K−1. The Debye model fitting of the solid thermal conductivity agreed well with the experimental data below 200 K but showed a deviation at high temperatures, indicating that optical phonons could substantially contribute to thermal transport at high temperatures. The calculated phonon mean free path decreased with temperatures between 2 and 21 K. The mean free path at 2 K approached 3 μm, which was similar to the grain size of the polycrystalline sample. This work provides useful insights into the preparation and thermal properties of quasi-1D ZrSe3.

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Large spin hall conductivity in low-symmetry semiconductor ZrSe3

Cited by 4 publications

References 22 publications

Interfacial Modulation of Spin–Orbit Torques Induced by Two-Dimensional van der Waals Material ZrSe₃

Interfacial Modulation of Spin–Orbit Torques Induced by Two-Dimensional van der Waals Material ZrSe₃

Symmetry breaking for current-induced magnetization switching

Crystal Growth and Thermal Properties of Quasi-One-Dimensional van der Waals Material ZrSe3

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Large spin hall conductivity in low-symmetry semiconductor ZrSe3

Cited by 4 publications

References 22 publications

Interfacial Modulation of Spin–Orbit Torques Induced by Two-Dimensional van der Waals Material ZrSe3

Interfacial Modulation of Spin–Orbit Torques Induced by Two-Dimensional van der Waals Material ZrSe3

Symmetry breaking for current-induced magnetization switching

Crystal Growth and Thermal Properties of Quasi-One-Dimensional van der Waals Material ZrSe3

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Product

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Interfacial Modulation of Spin–Orbit Torques Induced by Two-Dimensional van der Waals Material ZrSe₃

Interfacial Modulation of Spin–Orbit Torques Induced by Two-Dimensional van der Waals Material ZrSe₃