Large SiO2-substituted GeO2 single-crystals with the α-quartz structure

Armand, P.; Clement, Simon G.; Balitsky, Denis; Lignie, Adrien; Papet, Philippe

doi:10.1016/j.jcrysgro.2010.12.030

Cited by 14 publications

(21 citation statements)

References 16 publications

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“…[6,8] Vibration bands of hydroxyl groups or water molecules were not detected by transmission IR spectroscopy in these flux-grown a-GeO 2 materials. [6,8] Vibration bands of hydroxyl groups or water molecules were not detected by transmission IR spectroscopy in these flux-grown a-GeO 2 materials.…”

Section: Introductionmentioning

confidence: 82%

“…The origin of the differences between these two C ij constants can be directly attrib- 19.290(10) 3005(2) g 4 14.907(10) 2304(2) g 5 33.788 (10) 5264(2) g 6 19.262(10) 3001(2) [a] T = 0 K. [b] See ref. [8]. uted to the crystal quality, which is related to the growth technique used to obtain the a-GeO 2 single crystals.…”

Section: Room-temperature Elastic Constantsmentioning

confidence: 99%

“…[8]. [7,8] In general, the elastic behavior of a solid depends on its atomic structural arrangement and on the strength of its interatomic binding forces. The presence of hydroxyl groups and water molecules were reported for hydrothermally grown GeO 2 single crystals, whereas OH-free a-GeO 2 crystals were grown with the flux technique.…”

Section: Room-temperature Elastic Constantsmentioning

confidence: 99%

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High‐Temperature Elastic Moduli of Flux‐Grown α‐GeO₂ Single Crystal

et al. 2013

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From high-precision Brillouin spectroscopy measurements, six elastic constants (C11, C33, C44, C66, C12, and C14) of a flux-grown GeO2 single crystal with the α-quartz-like structure are obtained in the 298-1273 K temperature range. High-temperature powder X-ray diffraction data is collected to determine the temperature dependence of the lattice parameters and the volume thermal expansion coefficients. The temperature dependence of the mass density, ρ, is evaluated and used to estimate the thermal dependence of its refractive indices (ordinary and extraordinary), according to the Lorentz-Lorenz equation. The extraction of the ambient piezoelectric stress contribution, e11, from the C'11-C11 difference gives, for the piezoelectric strain coefficient d11 , a value of 5.7(2) pC N(-1), which is more than twice that of α-quartz. As the quartz structure of α-GeO2 remains stable until melting, piezoelectric activity is observed until 1273 K.

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Section: Introductionmentioning

confidence: 82%

Section: Room-temperature Elastic Constantsmentioning

confidence: 99%

Section: Room-temperature Elastic Constantsmentioning

confidence: 99%

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High‐Temperature Elastic Moduli of Flux‐Grown α‐GeO₂ Single Crystal

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“…However, for comparison with other binary compounds, we underline that a-quartz is presently the mostused piezoelectric material with a piezoelectric strain of d 11 ¼ 2.31 pC N À1 41. Note: 1 a.u.…”

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confidence: 99%

Revisited phonon assignment and electro-mechanical properties of chromium disilicide

et al. 2015

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We report a complete study of the lattice dynamics, dielectric, elastic and piezoelectric properties of hexagonal semiconducting chromium disilicide (CrSi 2 ). From a combined experimental and theoretical study, we have revisited the phonon mode assignments at the zone-center, so that the contradictions met in previous experimental studies between 250 and 300 cm À1 are now explained and understood.We found that the temperature dependence of the Raman frequencies is mainly due to an implicit volume contribution and related to the large Grüneisen parameter. This explains why CrSi 2 has a moderate thermal conductivity although its Debye temperature is quite large. Optic and static dielectric constants have also been analyzed and discussed. The elastic constants of CrSi 2 are large, but this compound is quite brittle. In addition, the relatively low Poisson coefficient associated to the large negative Cauchy pressure of CrSi 2 indicate the angular nature of its bonding. The calculation of its piezoelectric coefficient shows a sizable value with a magnitude similar to that reported for a-quartz.

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“…The samples were well shaped crystals with dimensions of about 4×1×1 mm. A germanium dioxide quartz sample was grown on quartz plate [11].…”

Section: Methodsmentioning

confidence: 99%

Luminescence of SiO2 and GeO2 crystals with rutile structure. Comparison with α-quartz crystals and relevant glasses (Review Article)

Trukhin¹

2016

Low Temperature Physics

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Luminescence properties of SiO 2 in different structural states are compared. Similar comparison is made for GeO 2 . Rutile and α-quartz structures as well as glassy state of these materials are considered. Main results are that for α-quartz crystals the luminescence of self-trapped exciton is the general phenomenon that is absent in the crystal with rutile structure. In rutile structured SiO 2 (stishovite) and GeO 2 (argutite) the main luminescence is due to a host material defect existing in as-received (as-grown) samples. The defect luminescence possesses specific two bands, one of which has a slow decay (for SiO 2 in the blue and for GeO 2 , in green range) and another, a fast ultraviolet (UV) band (4.75 eV in SiO 2 and at 3 eV in GeO 2 ). In silica and germania glasses, the luminescence of self-trapped exciton coexists with defect luminescence. The latter also contains two bands: one in the visible range and another in the UV range. The defect luminescence of glasses was studied in details during last 60-70 years and is ascribed to oxygen deficient defects. Analogous defect luminescence in the corresponding pure nonirradiated crystals with α-quartz structure is absent. Only irradiation of a α-quartz crystal by energetic electron beam, γ-rays and neutrons provides defect luminescence analogous to glasses and crystals with rutile structure. Therefore, in glassy state the structure containing tetrahedron motifs is responsible for existence of self-trapped excitons and defects in octahedral motifs are responsible for oxygen deficient defects. PACS

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Large SiO2-substituted GeO2 single-crystals with the α-quartz structure

Cited by 14 publications

References 16 publications

High‐Temperature Elastic Moduli of Flux‐Grown α‐GeO₂ Single Crystal

High‐Temperature Elastic Moduli of Flux‐Grown α‐GeO₂ Single Crystal

Revisited phonon assignment and electro-mechanical properties of chromium disilicide

Luminescence of SiO2 and GeO2 crystals with rutile structure. Comparison with α-quartz crystals and relevant glasses (Review Article)

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Large SiO2-substituted GeO2 single-crystals with the α-quartz structure

Cited by 14 publications

References 16 publications

High‐Temperature Elastic Moduli of Flux‐Grown α‐GeO2 Single Crystal

High‐Temperature Elastic Moduli of Flux‐Grown α‐GeO2 Single Crystal

Revisited phonon assignment and electro-mechanical properties of chromium disilicide

Luminescence of SiO2 and GeO2 crystals with rutile structure. Comparison with α-quartz crystals and relevant glasses (Review Article)

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High‐Temperature Elastic Moduli of Flux‐Grown α‐GeO₂ Single Crystal

High‐Temperature Elastic Moduli of Flux‐Grown α‐GeO₂ Single Crystal