Large-Signal modeling of power GaN HEMTs including thermal effects

Torregrosa, G.; Grajal, Jesús; Peroni, M.; Serino, A.; Nanni, Antonio; Cetronio, A.

doi:10.1109/emicc.2007.4412641

Cited by 8 publications

(6 citation statements)

References 5 publications

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“…The Angelov model [23], [24] has frequently been used to model HEMT due to improved predictions of device [7], [8]. An analytical drain-source current model based on [14], [15] is developed here for the high-power GaN HEMT.…”

Section: A Modeling Of High Power Gan Hemt Drain Current Characterismentioning

confidence: 99%

A Wideband Multiharmonic Empirical Large-Signal Model for High-Power GaN HEMTs With Self-Heating and Charge-Trapping Effects

Yuk

Branner

McQuate³

2009

IEEE Trans. Microwave Theory Techn.

106

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A complete empirical large-signal model for highpower AlGaN/GaN HEMTs (GaN HEMT) utilizing an improved drain current ( ) formulation with self-heating and chargetrapping modifications is presented. The new drain current equation accurately models the asymmetric bell-shaped transconductance ( ) for high over a large range of biases. A method of systematically employing dynamic IV behavior using pulsedgate IV and pulsed-gate-pulsed-drain IV datasets over a wide variety of thermal and charge-trapping conditions is presented. The composite nonlinear model accurately predicts the dynamic IV behavior, -parameters up to 10 GHz, and large-signal wideband harmonic behavior for a multitude of quiescent gate-source and drain-source biases as well as third-order intermodulation distortion (IM3).Index Terms-AlGaN/GaN, gallium nitride, GaN, HEMT, high power, large-signal, model.

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Section: A Modeling Of High Power Gan Hemt Drain Current Characterismentioning

confidence: 99%

A Wideband Multiharmonic Empirical Large-Signal Model for High-Power GaN HEMTs With Self-Heating and Charge-Trapping Effects

Yuk

Branner

McQuate³

2009

IEEE Trans. Microwave Theory Techn.

106

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“…In the last years, the microwave modelling of gallium nitride (GaN) HEMT has been object of intense studies [1][2][3][4][5][6][7][8][9][10]. This is because such kind of solid state device is attracting a great attention for microwave high power applications, mainly due to the large bandgap of this semiconductor.…”

Section: Introductionmentioning

confidence: 99%

“…This is a key property for enhancing the power handling capability of the transistor, which is a mandatory requirement in particular for large devices such as in the present case. The microwave model of the investigated GaN HEMT has been implemented by combining empirical and look-up table approaches [7][8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Combined empirical and look-up table approach for non-quasi-static modelling of GaN HEMTs

Crupi

Schreurs

Caddemi

et al. 2009

2009 9th International Conference on Telecommunication in Modern Satellite, Cable, and Broadcasting Services

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“…In regards to precise large-signal modeling, large-signal electro-thermal or empirical models of GaN-HEMT and silicon laterally-diffused metal-oxide-semiconductor field-effect transistors (LDMOS-FET) have been studied [6][7][8][9][10][11]. In [6], a compact channel current model was constructed with a reduced number of parameters.…”

Section: Introductionmentioning

confidence: 99%

“…In [6], a compact channel current model was constructed with a reduced number of parameters. Electro-thermal large-signal models were proposed in [8][9][10][11]. In [12], a channel current considering the device physics was proposed.…”

Section: Introductionmentioning

confidence: 99%

Scaled GaN-HEMT Large-Signal Model Based on EM Simulation

Lee

Kang

Choi³

et al. 2020

Electronics

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This paper presents a scaled GaN-HEMT large-signal model based on EM simulation. A large-signal model of the 10-finger GaN-HEMT consists of a large-signal model of the two-finger GaN-HEMT and an equivalent circuit of the interconnection circuit. The equivalent circuit of the interconnection circuit was extracted according to the EM simulation results. The large-signal model for the two-finger device is based on the conventional Angelov channel current model. The large-signal model for the 10-finger device was verified through load-pull measurement. The 10-finger GaN-HEMT produced an output power of about 20 W for both simulation and load-pull measurements.

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Large-Signal modeling of power GaN HEMTs including thermal effects

Cited by 8 publications

References 5 publications

A Wideband Multiharmonic Empirical Large-Signal Model for High-Power GaN HEMTs With Self-Heating and Charge-Trapping Effects

A Wideband Multiharmonic Empirical Large-Signal Model for High-Power GaN HEMTs With Self-Heating and Charge-Trapping Effects

Combined empirical and look-up table approach for non-quasi-static modelling of GaN HEMTs

Scaled GaN-HEMT Large-Signal Model Based on EM Simulation

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