Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Lin, Yu-Shyan; Lin, Shin-Fu

doi:10.3390/mi12010007

Cited by 5 publications

(2 citation statements)

References 23 publications

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“…GaN has the favorable properties of a big bandgap, an enhanced breakdown electric field, and high thermal conductivity. AlGaN/GaN is a key material system in fifth generation (5G) applications in the field of microwave communication [ 1 , 2 , 3 , 4 ]. An AlGaN/GaN heterostructure generates a high two-dimensional electron gas (2-DEG) by spontaneous and piezoelectric polarization effects [ 5 , 6 ].…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO2 as Passivation and Dielectric Layers

Lin

2023

Micromachines

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This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO2 is used to form the dielectric and passivation layers. The TiO2 film is characterized using X-ray photoemission spectroscopy (XPS), Raman spectroscopy, and transmission electron microscopy (TEM). The quality of the gate oxide is improved by annealing at 300 °C in N2. Experimental results indicate that the annealed MOS structure effectively reduces the gate leakage current. The high performance of the annealed MOS-HEMTs and their stable operation at elevated temperatures up to 450 K is demonstrated. Furthermore, annealing improves their output power characteristics.

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Section: Introductionmentioning

confidence: 99%

AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO2 as Passivation and Dielectric Layers

Lin

2023

Micromachines

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“…As compared to the GaN channel device, the InGaN channel device exhibited better noise performance as it owns a higher electron drift velocity. The effect of passivation on the device noise performance was investigated in [10]. It was observed that the passivation improves the noise performance of the GaN HEMT.…”

Section: Introductionmentioning

confidence: 99%

Impact of AlGaN Barrier Thickness and Substrate Material on the Noise Characteristics of GaN HEMT

Jarndal

Arivazhagan

Almajali

et al. 2022

IEEE J. Electron Devices Soc.

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In this paper, the impact of AlGaN barrier thickness (tAlGaN) and substrate leakage on the noise conductance and noise figure in GaN High Electron Mobility Transistor (HEMT) is investigated. The investigation and analysis in this paper are targeting the Low Noise Amplifier (LNA) applications. The noise analysis is carried out using Technology Computer-Aided Design (TCAD) physical simulator. Initially, the DC, RF, and noise simulations are validated against measurements of a GaN device. AlGaN barrier thickness (tAlGaN) is varied and its impact on the minimum noise figure (NFmin) is analyzed. It is observed that the NFmin decreases with tAlGaN reduction at the typical bias conditions of LNA. This observation on the impact of tAlGaN on the NFmin follows Fukui's model, which states that the NFmin decreases with the increase in transconductance. In addition, the impact of the substrate material on noise performance is analyzed. The substrates used for the investigation are Silicon (Si) and Silicon Carbide (SiC). At 40 GHz, it is found that the noise conductance and the NFmin of GaN HEMT on SiC substrate is reduced by 13% and 12%, respectively, in comparison with GaN HEMT on Si substrate. This could be attributed to the lower gate-tosubstrate capacitance of the GaN HEMT on SiC substrate.

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Linearity enhancement and noise reduction in a passivated AlGaAs/InGaAs/GaAs high-electron mobility transistor

Lin

Huang

2021

J. Korean Phys. Soc.

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Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Cited by 5 publications

References 23 publications

AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO2 as Passivation and Dielectric Layers

AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO2 as Passivation and Dielectric Layers

Impact of AlGaN Barrier Thickness and Substrate Material on the Noise Characteristics of GaN HEMT

Linearity enhancement and noise reduction in a passivated AlGaAs/InGaAs/GaAs high-electron mobility transistor

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