Large-scale two-dimensional MoS_2 photodetectors by magnetron sputtering

Ling, Zhi Peng; Yang, Rui; Chai, Jianwei; Wang, S. J.; Leong, Wei Sun; Tong, Ying; Lei, Dian; Zhou, Qian; Gong, Xiao; Z., D.; Ang, Kah‐Wee

doi:10.1364/oe.23.013580

Cited by 102 publications

(64 citation statements)

References 23 publications

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“…The device exhibits an obvious photocurrent/dark current ratio of ≈10, even at 200 °C. MoS 2 nanosheets prepared from other methods, such as liquid exfoliation, magnetron sputtering, and solution synthesis have also been employed in photodetectors. However, these devices usually exhibit inferior responsivities to their counterparts based on mechanically‐exfoliated or CVD‐grown MoS 2 .…”

Section: Photoconductors/phototransistors Based On 2d Layered Semiconmentioning

confidence: 99%

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

Xie

Mak

Tao

et al. 2016

Adv Funct Materials

581

547

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1 of 41) 1603886However, despite its high absorption coefficient, [15] single-layer graphene can absorb only ≈2.3% of incident visible and infrared (IR) light due to its thinness, [16,17] which is undesirable for high performance photodetectors that require strong light absorption. Graphene's gaplessness also leads to short photocarrier lifetime in pure graphene, which is unfavorable for efficient photocurrent generation. [18][19][20] In addition to graphene, this family of materials contains an extremely large range of other 2D-layered materials that have recently attracted much research interest. [1][2][3][4][5][6][7][8] Similar to graphene, being atomically thin, these materials exhibit a wide range of unique electrical, optical, thermal, and mechanical properties that can never be seen in their three-dimensional (3D) bulk counterparts due to the dimensionality confinement effect and modulation in their band structures. [21,22] These 2D-layered materials can be metals, semiconductors, insulators, superconductors, topological insulators, or paramagnetic, diamagnetic, ferromagnetic, or anti-ferromagnetic, etc., depending on their composition and phases. [23,24] Among these materials, particular attention has been paid to 2D layered semiconductors thanks to their unique electronic [2,[24][25][26] and optoelectronic properties, [27,28] which arise from their appreciable bandgaps ranging from IR to UV and throughout the visible range.The optical and optoelectronic properties of 2D layered semiconductors are strongly dependent on their number of layers due to the quantum confinement effects in the out-of-plane direction and changes in symmetry. [29,30] This layer-dependent modulation of physical properties, such as bandgap structure, is particularly evident in the semiconducting transition metal dichalcogenides (TMDs) [2,7,29,31,32] and few-layer black phosphorus (BP). [33,34] Another effect induced by vertical quantum confinement is the increased absorption efficiency, which results from the strongly bound excitons due to the reduced thickness. [29,35,36] The atomic thickness of a 2D layered semiconductor also leads to high transparency [37] and good mechanical flexibility, [38] properties of particular interest for novel device applications such as flexible, wearable, or portable electronics. Despite their high transparency, 2D layered semiconductors can strongly interact with incident light, leading to enhanced photon absorption and electron-hole creation due to the existence of Van Hove singularities in their electronic density of states. [39] It has also been reported that 2D layered materials possess extraordinary elastic modulus and large strain (>10%) before rupture, [40][41][42][43] which allow for tuning their electronic and optical properties Following a significant number of graphene studies, other two-dimensional (2D) layered materials have attracted more and more interest for their unique structures and distinct physical properties, which has opened a window for realizing novel electronic or optoelectr...

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Section: Photoconductors/phototransistors Based On 2d Layered Semiconmentioning

confidence: 99%

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

Xie

Mak

Tao

et al. 2016

Adv Funct Materials

581

547

View full text Add to dashboard Cite

show abstract

“…Remarkably, the layered black phosphorous (BP) material can be reduced to one single atomic layer in the vertical direction as a result of its van der Waals structure. The monolayer of BP, known as phosphorene, exhibits physical properties that can be significantly different from those of its bulk counterpart 16. Phosphorene has changed the landscape of many research areas in science and technology, particularly in condensed matter physics, and it has received much attention recently for its use as the base component of novel nanodevices, e.g., transistors, nanomechanical resonators, photovoltaics, photodetectors, batteries and sensors 9, 10, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37…”

Section: Introductionmentioning

confidence: 99%

“…The monolayer of BP, known as phosphorene, exhibits physical properties that can be significantly different from those of its bulk counterpart. [16] Phosphorene has changed the landscape of many research areas in science and technology, particularly in condensed matter physics, and it has received much attention recently for its use as the base component of novel nanodevices, e.g., transistors, nanomechanical resonators, photovoltaics, photodetectors, batteries and sensors. [9,10, The important challenge in realizing phosphorene devices is caused by its strong reaction with oxygen and water and so it should be well-protected from degradation by encapsulating or sandwiching between different materials.…”

Section: Introductionmentioning

confidence: 99%

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

et al. 2017

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The challenge of science and technology is to design and make materials that will dominate the future of our society. In this context, black phosphorus has emerged as a new, intriguing two‐dimensional (2D) material, together with its monolayer, which is referred to as phosphorene. The exploration of this new 2D material demands various fabrication methods to achieve potential applications— this demand motivated this review. This article is aimed at supplementing the concrete understanding of existing phosphorene fabrication techniques, which forms the foundation for a variety of applications. Here, the major issue of the degradation encountered in realizing devices based on few‐layered black phosphorus and phosphorene is reviewed. The prospects of phosphorene in future research are also described by discussing its significance and explaining ways to advance state‐of‐art of phosphorene‐based devices. In addition, a detailed presentation on the demand for future studies to promote well‐systemized fabrication methods towards large‐area, high‐yield and perfectly protected phosphorene for the development of reliable devices in optoelectronic applications and other areas is offered.

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“…In particular, atomically thin molybdenum disulphide (MoS 2 ) films, which have a thickness-dependent optical bandgap ranging from 1.3 eV (bulk, indirect) to 1.8 eV (monolayer, direct) 4 , a quasiparticle bandgap of 2.84 eV 5 and spin-orbit splitting 6 , have been investigated as one of the most promising TMDCs for next-generation electronic and optoelectronic applications, such as transistors 7–9 , photodetectors 10 , and solar cells 11 . However, a direct growth technique needs to be developed that is compatible with conventional silicon technology and can be integrated with flexible substrates at sufficiently low temperature to extend the applicability of MoS 2 films to various electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Atomic rearrangement of a sputtered MoS2 film from amorphous to a 2D layered structure by electron beam irradiation

Kim

Yoon

2017

Sci Rep

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We synthesised a crystalline MoS2 film from as-sputtered amorphous film by applying an electron beam irradiation (EBI) process. A collimated electron beam (60 mm dia.) with an energy of 1 kV was irradiated for only 1 min to achieve crystallisation without an additional heating process. After the EBI process, we observed a two-dimensional layered structure of MoS2 about 4 nm thick and with a hexagonal atomic arrangement on the surface. A stoichiometric MoS2 film was confirmed to grow well on SiO2/Si substrates and include partial oxidation of Mo. In our experimental configuration, EBI on an atomically thin MoS2 layer stimulated the transformation from a thermodynamically unstable amorphous structure to a stable crystalline nature with a nanometer grain size. We employed a Monte Carlo simulation to calculate the penetration depth of electrons into the MoS2 film and investigated the atomic rearrangement of the amorphous MoS2 structure.

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Large-scale two-dimensional MoS_2 photodetectors by magnetron sputtering

Cited by 102 publications

References 23 publications

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

Atomic rearrangement of a sputtered MoS2 film from amorphous to a 2D layered structure by electron beam irradiation

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