Large scale tapered GaN rods grown by chemical vapour deposition

Qiu, Hailin; Cao, Chuanbao; Xiang, Xu; Zhang, Yunhong; Li, Jie; Zhu, Hesun

doi:10.1016/j.jcrysgro.2005.11.120

Cited by 22 publications

(9 citation statements)

References 28 publications

(29 reference statements)

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“…This growth method is based on the reduction of Ga 2 O 3 by carbon with the vaporization of Ga 2 O, which is subsequently nitrided with NH 3 . The bar crystals were in the size of 1-3 mm long, 0.1-0.3 mm wide and 0.1 mm thick, with bumpy surfaces, which were much larger than any reported free-standing crystals grown by the CRN method [12][13][14][15][16][17]. The bar crystals were only grown at the edge of the silica glass tube outlet for Ga 2 O gas at which the Ga 2 O gas with a high concentration was carried and reacted with NH 3 .…”

Section: Introductionmentioning

confidence: 78%

Vapor-phase growth of high-quality GaN single crystals in crucible by carbothermal reduction and nitridation of Ga2O3

Miura

Shimada

Sekiguchi

et al. 2008

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 78%

Vapor-phase growth of high-quality GaN single crystals in crucible by carbothermal reduction and nitridation of Ga2O3

Miura

Shimada

Sekiguchi

et al. 2008

Journal of Crystal Growth

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“…The products were quite different from the tapered GaN rods grown in the VLS mechanism of carbothermal reduction. 38 In the VLS growth process, the partial pressure of reactive species defines the size of the liquid drops at the top of nanowires which in turn control the diameter of the nanowire. 39 Tapered rods were formed by the change of Ga/N ratio in the vapor phase in the carbothermal reduction.…”

Section: Residual Carbon In the Precursorsmentioning

confidence: 99%

Preparation of gallium oxynitride powder and its nanofibers by the nitridation of a gallium oxide precursor doped with nickel or cobalt obtained via the citrate route

et al. 2010

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Acicular crystals were grown in gallium oxynitride powder prepared by ammonia nitridation of amorphous gallium oxide precursors containing less than 5 at% of either Ni or Co, via the citrate route. The crystals were several tens of nanometres wide, several micrometres long, and grown in the temperature range 750 to 850 degrees C in a flow of ammonia of less than 200 mL min(-1). The crystal structure of the gallium oxynitride was a highly disordered 2H wurtzite-type with some 3C zinc blende-type stacking faults. The crystals grew in their basal plane changing their aspect ratio with the supplying method of small amounts of Ni or Co and an amount of residual carbon. The acicular crystals were grown by the catalytic behavior of Ni or Co to enhance one-dimensional growth in the hexagonal c-plane.

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“…Self-organized GaN NRs can also be formed based on the vapor-liquid-solid (VLS) growth mode with the self-catalyst or an extrinsic catalyst (a metal nanoparticle (NP)) [3,4]. In this growth mode, either the self-catalyst or extrinsic catalyst is used for transferring vapor elements into crystalline structure through the catalytic metal droplet [5][6][7][8][9]. In other words, the melted metal absorbs composition elements to reach a supersaturation condition, under which the composition elements are precipitated on the seeding semiconductor beneath the metal droplet.…”

Section: Introductionmentioning

confidence: 99%

Spiral Deposition with Alternating Indium Composition in Growing an InGaN Nanoneedle with the Vapor‐Liquid‐Solid Growth Mode

Chang

Liao

Chen

et al. 2012

Journal of Nanomaterials

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The spiral deposition of InGaN with a quasiperiodical distribution of indium content along the growth direction for forming InGaN nanoneedles (NNs) with the vapor-liquid-solid (VLS) growth mode is demonstrated. The VLS growth is implemented by using Au nanoparticles (NPs) as the catalyst in metalorganic chemical vapor deposition. The Au NPs on a GaN template are generated through pulsed laser irradiation. The observation of spiral deposition is based on the analyses of the scanning results in the high angle annular dark field and energy dispersive X-ray measurements of transmission electron microscopy. In the measurements, the composition variations along and perpendicular to the growth direction (thec-axis) are illustrated. The alternating indium content along the growth direction is attributed to a quasiperiodically pulsed behavior of indium supersaturation process in the melted Au NP at the top of an InGaN NN. The spiral deposition of InGaN is due to the formation of an NN at the location of an Au NP with a screw-type dislocation beneath in the GaN template, at which the growth of a quasi-one-dimensional structure can be easily initiated.

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Large scale tapered GaN rods grown by chemical vapour deposition

Cited by 22 publications

References 28 publications

Vapor-phase growth of high-quality GaN single crystals in crucible by carbothermal reduction and nitridation of Ga2O3

Vapor-phase growth of high-quality GaN single crystals in crucible by carbothermal reduction and nitridation of Ga2O3

Preparation of gallium oxynitride powder and its nanofibers by the nitridation of a gallium oxide precursor doped with nickel or cobalt obtained via the citrate route

Spiral Deposition with Alternating Indium Composition in Growing an InGaN Nanoneedle with the Vapor‐Liquid‐Solid Growth Mode

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