Two-dimensional
(2D) materials are promising candidates for building
ultrashort-channel devices because their thickness can be reduced
down to a single atomic layer. Here, we demonstrate an ultraflat nanogap
platform based on atomic layer deposition (ALD) and utilize the structure
to fabricate 2D material-based optical and electronic devices. In
our method, ultraflat metal surfaces, template-stripped from a Si
wafer mold, are separated by an Al2O3 ALD layer
down to a gap width of 10 nm. Surfaces of both electrodes are vertically
aligned without a height difference, and each electrode is ultraflat
with a measured root-mean-square roughness as low as 0.315 nm, smaller
than the thickness of monolayer graphene. Simply by placing 2D material
flakes on top of the platform, short-channel field-effect transistors
based on black phosphorus and MoS2 are fabricated, exhibiting
their typical transistor characteristics. Furthermore, we use the
same platform to demonstrate photodetectors with a nanoscale photosensitive
channel, exhibiting higher photosensitivity compared to microscale
gap channels. Our wafer-scale atomic layer lithography method can
benefit a diverse range of 2D optical and electronic applications.