“…Moreover, GeTe also undergoes a phase transition from rhombohedral phase at low temperature to cubic phase at high temperature, ,, which can also influence the TE performance. Thus, to enhance the TE performance of the GeTe-based materials, carrier density modulation and phase structure tuning strategies are widely performed by doping and alloying with other elements such as Pb, , Pb–Se, ,, Pb–Bi, Pb–Sb, , Sb, Sb–Se, , Sb–Bi, Se–S, Bi, Bi–Cu, Bi–Cd, , Bi–Mn, In, and In–Sb, as well as with other compounds such as AgSbTe 2 , Bi 2 Te 3 , , Sb 2 Te 3 , ,, and MnTe . Band engineering mechanisms such as band convergence ,,, and resonant levels , have been put forward to understand the high PF in the GeTe-based alloys, and point defect scattering is the most proposed mechanism to explain the reduction of κ lat in the GeTe-based alloys. , …”