Large-scale Patterning of Hydrophobic Silicon Nanostructure Arrays Fabricated by Dual Lithography and Deep Reactive Ion Etching

Abstract

Abstract:We describe a simple but efficient technique to fabricate large-scale arrays of highly ordered silicon nanostructures. By coupling dual lithography using light of 351.1 nm wavelength with deep reactive ion etching (DRIE), silicon nanostructures of excellent regularity and uniform coverage were achieved. The proposed nanofabrication method not only simplified the nanofabrication process but also produced highaspect-ratio (higher than 15) nanostructures. The scalloping problem was also controlled by regulating DRIE parameters. The process is rapid, cheap, examined to optimize the fabrication process, and has the potential to be scaled up to large areas. The contact angle of a water droplet atop the surface is larger than 150• .Moreover, by coupling black silicon process with DRIE-based microfabrication, three-dimensional nano/nano dual-scale structures which show robust and stable hydrophobicity have been achieved. This process opens new application possibilities in optical, photoelectric, microelectronic, catalytic and biomedical applications.

Ultrahigh aspect ratio etching of silicon in SF6-O2 plasma: The clear-oxidize-remove-etch (CORE) sequence and chromium mask

“…[14][15][16][17][18] Instead, dry plasma etching has proven to faithfully transfer the requested mask pattern into the underlying silicon. [19][20][21][22][23][24][25][26][27][28] The maximum ratio between the vertical and horizontal etch is mostly depending on the directionality of the incoming ions, so the ion angular distribution function (IADF) is an important plasma parameter to consider in HAR etching. Modern HAR processes tend to minimize the reactor pressure and increase the self-bias during the etch process as this sharpens the IADF even though this compromises mask selectivity.…”

Scalloping and Stress Concentration in DRIE-Manufactured Comb-Drives

“…Since scalloping is not acceptable in specific applications, a dedicated effort has been provided to control and reduce it, mainly based on the optimization of DRIE process parameters [47][48][49][50], or, alternatively, removing it after fabrication [38].…”

Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application

“…Until now, many micro- and nanostructured black silicon materials can also be manufactured by using DRIE treatment and ion implantation, aiming to reduce light reflectance and enhance the near-infrared absorptance [ 1 – 5 ]. DRIE process is usually carried out in a mode of cyclic etching-passivation steps with a photoresist mask which can enable the silicon microfabrication of high-aspect ratio structures.…”