Large-scale integration of wavelength-addressable all-optical memories on a photonic crystal chip

Kuramochi, Eiichi; Nozaki, Kengo; Shinya, Akihiko; Takeda, Koji; Sato, Tomonari; Matsuo, Shinji; Taniyama, Hideaki; Sumikura, Hisashi; Notomi, Masaya

doi:10.1038/nphoton.2014.93

Cited by 305 publications

(182 citation statements)

References 28 publications

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“…In optical nano-resonators, the electric local density of optical states (LDOS), which assesses the number of available photonic states in a specific spatial region [1][2][3][4] , is dominated by a few strongly localized modes that are not spectrally overlapped (Note that for well spectrally resolved modes in nanoresonators the electric LDOS corresponds to the electric field intensity of the modes). The characterization of the electric LDOS at the proper spatial resolution is an essential step toward the realization of high-density photonic integrated circuits and quantum photonic networks [5][6][7] . For example, photon tunneling in coupled photonic crystal nanocavities (PCNs) is governed by the electric LDOS spatial overlap between neighboring resonators 8 .…”

Section: Introductionmentioning

confidence: 99%

Ultra-subwavelength phase-sensitive Fano-imaging of localized photonic modes

et al. 2015

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Photonic and plasmonic devices rely on nanoscale control of the local density of optical states (LDOS) in dielectric and metallic environments. The tremendous progress in designing and tailoring the electric LDOS of nano-resonators requires an investigation tool that is able to access the detailed features of the optical localized resonant modes with deep-subwavelength spatial resolution. This scenario has motivated the development of different nanoscale imaging techniques. Here, we prove that a technique involving the combination of scanning near-field optical microscopy with resonant scattering spectroscopy enables imaging the electric LDOS in nano-resonators with outstanding spatial resolution (l/19) by means of a pure optical method based on light scattering. Using this technique, we investigate the properties of photonic crystal nanocavities, demonstrating that the resonant modes appear as characteristic Fano line shapes, which arise from interference. Therefore, by monitoring the spatial variation of the Fano line shape, we locally measure the phase modulation of the resonant modes without the need of external heterodyne detection. This novel, deep-subwavelength imaging method allows us to access both the intensity and the phase modulation of localized electric fields. Finally, this technique could be implemented on any type of platform, being particularly appealing for those based on non-optically active material, such as silicon, glass, polymers, or metals.

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Section: Introductionmentioning

confidence: 99%

Ultra-subwavelength phase-sensitive Fano-imaging of localized photonic modes

et al. 2015

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“…24 We emphasize the relevance of our super-L3 PCN as a highly promising building block for integrated photonics applications including silicon photonics, on-chip scalable platforms for quantum state control, 2 and cavity optomechanics. 25 Note added in proof: Very recently, an experimental study 26 of silicon L3 PCNs, optimized using an educated-guess procedure, reported a measured Q-factor of 10 6 for the best cavity (and a value Q ¼ 0.5 Â 10 6 averaged on several PCNs). Our result still outperforms these values by a factor of 2.…”

mentioning

confidence: 99%

Genetically designed L3 photonic crystal nanocavities with measured quality factor exceeding one million

Lai

Pirotta

Urbinati

et al. 2014

Applied Physics Letters

124

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We report on the experimental realization of ultra-high quality factor (Q) designs of the L3-type photonic crystal nanocavity. Based on genetic optimization of the positions of few nearby holes, our design drastically improves the performance of the conventional L3 as experimentally confirmed by direct measurement of Q ≃ 2 × 106 in a silicon-based photonic crystal membrane. Our devices rank among the highest Q/V ratios ever reported in photonic crystal cavities, holding great promise for the realization of integrated photonic platforms based on ultra-high-Q resonators.

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“…Practical applications of the device could be in optical (RAM) memories for WDM networks, since the wavelength of the holding beam and switching pulses is not limited to a pre-defined value [18], [19], which makes the device very flexible.…”

Section: Discussionmentioning

confidence: 99%

Optimization of an Asymmetric DFB Laser Used as All-Optical Flip-Flop

Abbasi

Roelkens

Morthier

2015

IEEE J. Quantum Electron.

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Abstract-We have numerically optimized the speed of an all-optical flip-flop based on an antireflection-coated λ/4 phaseshifted distributed feedback (DFB) laser. Numerical results show that by engineering the grating of the DFB laser and making the coupling coefficient asymmetrical, fall times reduce by a factor of 2 compared with a standard laser design. It is also shown that the confinement factor in the quantum wells and the length of the laser cavity have a significant impact on the flip-flop operation. The switching between two states can be realized using pulses with energies below 125 fJ and with a duration of 10 ps. The switching time can be reduced to 5 ps and the switching rate increased up to 10 GHz.Index Terms-All-optical flip-flops, distributed feedback (DFB) lasers, optical bistability.

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Large-scale integration of wavelength-addressable all-optical memories on a photonic crystal chip

Cited by 305 publications

References 28 publications

Ultra-subwavelength phase-sensitive Fano-imaging of localized photonic modes

Ultra-subwavelength phase-sensitive Fano-imaging of localized photonic modes

Genetically designed L3 photonic crystal nanocavities with measured quality factor exceeding one million

Optimization of an Asymmetric DFB Laser Used as All-Optical Flip-Flop

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