Large scale, flexible organic transistor arrays and circuits based on polyimide materials

Ji, Deyang; Jiang, Lang; Cai, Xiaozhou; Dong, Huanli; Meng, Qing; Tian, Guofeng; Wu, Dezhen; Li, Jingze; Hu, Wenping

doi:10.1016/j.orgel.2013.06.028

Cited by 63 publications

(40 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this work, we developed a straightforward methodology named as Rapid Annealing Self-Solution-Shearing (RASSS) to quickly produce large-area well-aligned BPEA single crystal arrays. These single crystal arrays with the length reaching up to millimeter scale can be manufactured on different substrates such as Si/SiO 2 , glass and polyimide 49 . Specifically speaking, a slightly tilted substrate is first covered with a thin layer of BPEA solution, and then a high-temperature annealing treatment is applied to make the solvent rapidly volatilize along the direction of the slope.…”

mentioning

confidence: 99%

Quick Fabrication of Large-area Organic Semiconductor Single Crystal Arrays with a Rapid Annealing Self-Solution-Shearing Method

Liu

et al. 2015

Sci Rep

Self Cite

View full text Add to dashboard Cite

In this paper, we developed a new method to produce large-area single crystal arrays by using the organic semiconductor 9, 10-bis (phenylethynyl) anthracene (BPEA). This method involves an easy operation, is efficient, meets the demands of being low-cost and is independent of the substrate for large-area arrays fabrication. Based on these single crystal arrays, the organic field effect transistors exhibit the superior performance with the average mobility extracting from the saturation region of 0.2 cm2 V−1s−1 (the highest 0.47 cm2 V−1s−1) and on/off ratio exceeding 105. In addition, our single crystal arrays also show a very high photoswitch performance with an on/off current ratio up to 4.1 × 105, which is one of the highest values reported for organic materials. It is believed that this method provides a new way to fabricate single crystal arrays and has the potential for application to large area organic electronics.

show abstract

mentioning

confidence: 99%

Quick Fabrication of Large-area Organic Semiconductor Single Crystal Arrays with a Rapid Annealing Self-Solution-Shearing Method

Liu

et al. 2015

Sci Rep

Self Cite

View full text Add to dashboard Cite

show abstract

“…The commercial use of OLEDs in displays and the emergence of planar lighting based on OLEDs are examples of an ongoing technological progress. Other notable applications of organic semiconductors (OSC) include, but are not limited to, organic photovoltaics (OPV), organic field‐effect transistors (OFET), flexible electronics, and sensors . Increasing the performance of OE devices is also coupled with the promise of low‐priced production due to the use of printing techniques …”

Section: Introductionmentioning

confidence: 99%

“…Since the pioneering works of Ta ng and VanSlyke, [1] who showedt hat light-emitting diodes based on small organic molecules can be produced, and Burroughes et al, [2] who depicted the suitability of conjugated polymers for organic light emitting diodes (OLED), there have been major advances in the field of organic electronics (OE) in general.T he commercial use of OLEDsi nd isplays [3] and the emergence of planar lighting based on OLEDs [4] are examples of an ongoing technological progress. Other notable applications of organic semiconductors (OSC) include, but are not limited to, organic photovoltaics (OPV), [5] organic field-effect transistors (OFET), [6] flexible electronics, [7] and sensors. [8] Increasing the performance of OE devices is also coupled with the promise of low-priced production due to the use of printing techniques.…”

Section: Introductionmentioning

confidence: 99%

Electroluminescent and Optoelectronic Properties of OLEDs with Bay‐Extended, Distorted Perylene Esters as Emitter Materials

et al. 2017

View full text Add to dashboard Cite

Three esters with a perylene, a unilaterally, and a bilaterally extended perylene core, respectively, were used as emitter materials for organic light-emitting diodes. The electroluminescent properties of these devices were studied. Different spectral shifts were found, which can be attributed to the formation of excited dimers (excimers) in the nanofilms of the emitter materials. Thermal treatment of the unilaterally extended derivative resulted in a red-shift of the electroluminescence owing to the formation of a denser nanofilm. The luminance and efficiency of optoelectronic devices employing the extended perylene esters exceed those of devices using an emitter layer comprised of the perylene ester. Different deposition methods, limitations in the deposition process, and the role of hole-transporting materials are compared.

show abstract

“…With the rapid development of the ultralarge‐scale integration, the continuing miniaturization of feature device sizes in integrated circuits industry toward nanometer scale urgently cast an increasing demand on low dielectric constant materials . As high‐performance low dielectric constant materials, aromatic polyimides (PIs) had been widely studied in academic and industrial fields and actually applied to a variety of electric, microelectronic, and optoelectronic devices for their reliable and excellent properties, i.e., considerably high glass transition temperatures ( T g ) overcoming the solder‐reflowing processes, high resistance to chemicals, good dielectric, and mechanical properties . However, even such superior properties of conventional aromatic PI systems were still unable to satisfy the rapid development of the electronic device technologies.…”

Section: Introductionmentioning

confidence: 99%

Phosphorus‐containing polyhedral oligomeric silsesquioxane/polyimides hybrid materials with low dielectric constant and low coefficients of thermal expansion

Hao

Jiang

et al. 2015

J of Applied Polymer Sci

View full text Add to dashboard Cite

Novel phosphorus‐containing polyhedral oligomeric silsesquioxane (POSS)/polyimides (PI) hybrid materials with low dielectric constant and low linear coefficients of thermal expansion (CTE) were prepared and characterized. The POSS/PI hybrid materials were synthesized with octa(aminopropyl)silsesquioxane (OAPS) and a series of phosphorus‐containing polyamide acids(PAA). The PAAs were synthesized with bis(4‐aminophenoxy) phenyl phosphine oxide (BAPPO), 4,4’‐diaminodiphenyl ether (ODA) and 3,3',4,4'‐biphenyl tetracarboxylic diandhydride (BPDA). The structures and properties of the hybrid materials were characterized. And the effect of the phosphorus‐containing structure on the POSS/PI hybrid materials was discussed. The dielectric constants and CTE of the hybrid materials were remarkably lower than that of the unmodified POSS/PI films. The lowest values of dielectric constant and CTE could achieve as low as 2.64 (1 MHz) and 27.45 ppm/K. Besides, the hybrid materials also had excellent thermal properties. The highest 5% weight loss temperature of the hybrid materials was as high as 580°C under air. © 2015 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015, 132, 42611.

show abstract

Large scale, flexible organic transistor arrays and circuits based on polyimide materials

Cited by 63 publications

References 42 publications

Quick Fabrication of Large-area Organic Semiconductor Single Crystal Arrays with a Rapid Annealing Self-Solution-Shearing Method

Quick Fabrication of Large-area Organic Semiconductor Single Crystal Arrays with a Rapid Annealing Self-Solution-Shearing Method

Electroluminescent and Optoelectronic Properties of OLEDs with Bay‐Extended, Distorted Perylene Esters as Emitter Materials

Phosphorus‐containing polyhedral oligomeric silsesquioxane/polyimides hybrid materials with low dielectric constant and low coefficients of thermal expansion

Contact Info

Product

Resources

About