Large-scale fabrication of free-standing and transparent SiC nanohole array with tailored structures

Zhao, Lianfu; Chen, Shanliang; Wang, Lin; Gao, Fengmei; Yao, Xiaohong; Yang, Weiyou

doi:10.1016/j.ceramint.2017.12.196

Cited by 12 publications

(5 citation statements)

References 38 publications

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“…Turn-on field (Eon, defined at a current density of 10 μA/cm 2 ) and threshold field (Eth, defined at a current density of 100 μA/cm 2 ) are 0.59 and 0.81 V/μm, respectively. These values are best among the state-of-the-art reported devices [36,41,49]. As is known, field emission cathode materials often have protrusions in the microscopic morphology, which make them play a role in greatly enhancing the local electric field in field emission.…”

Section: Resultsmentioning

confidence: 74%

Stacked conductive metal–organic framework nanorods for high-performance vacuum electronic devices

Guan

Li²,

Wu³

et al. 2022

Ceramics International

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Section: Resultsmentioning

confidence: 74%

Stacked conductive metal–organic framework nanorods for high-performance vacuum electronic devices

Guan

Li²,

Wu³

et al. 2022

Ceramics International

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“…The anodic etching of SiC substrates is determined by two concurrent reactions. One is the formation of silicon oxides (SiO and SiO 2 ), and the other is the dissolution of the formed silicon oxides as shown in equations (1)-( 4) [13,[23][24][25]:…”

Section: Resultsmentioning

confidence: 99%

Study on the layering phenomenon of SiC porous layer fabricated by constant current electrochemical etching

Wang¹,

Huang²,

Guo³

et al. 2020

Nanotechnology

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Electrochemical etching of silicon carbide (SiC) material has received increasing attention in recent years, due to its simple procedure, low cost and significance in the exploration of novel optoelectronic devices. In this paper, 4H-SiC substrates were electrochemically etched at a constant current density of 392.98 mA cm−2 in an electrolyte made up of hydrofluoric acid and deionized water. The layering of a SiC porous layer and periodic fluctuation of the voltage were witnessed for the first time, with the layering phenomenon corresponding well to the voltage period. However, no such phenomenon was observed when the SiC substrates were anodic etched under the same conditions with magnet stirring. As a result, the periodic variation of voltage was hypothesized to be the cause of regular layering during constant current electrochemical etching. Electrochemical etching in potentiostatic mode was thus performed at different voltages. We found that the diameter of the SiC nanopores increased while the thickness of the sidewall decreased with the increasing voltage. Based on the experimental findings, a model of mass transport was proposed. The mass transport process leads to periodic changes in resistance, hence the periodic change in voltage. This successfully explained the reason for the layering. Furthermore, SiC substrates were also electrochemically etched at high and low current densities, finding the existence of a threshold current density for the occurrence of the layering. Energy dispersive x-ray spectroscopy analysis showed that the composition of the SiC porous layer remained unchanged compared to the pure SiC wafer, implying that the peeling-off of the SiC porous layer obtained by electrochemical etching can be directly adopted for use on devices requiring a SiC porous structure.

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“…9b. 143 In summary, electrochemical etching offers an efficient strategy for fabricating SiC nanomaterials with precise physical dimensions and morphologies. The technique presents advantages such as simplicity of execution, affordability, and ecofriendliness.…”

Section: Electrochemical Etching Method the Electrochemical Etching P...mentioning

confidence: 99%

Advancements in silicon carbide-based supercapacitors: materials, performance, and emerging applications

Liu,

Li,

Huan

et al. 2024

Nanoscale

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Large-scale fabrication of free-standing and transparent SiC nanohole array with tailored structures

Cited by 12 publications

References 38 publications

Stacked conductive metal–organic framework nanorods for high-performance vacuum electronic devices

Stacked conductive metal–organic framework nanorods for high-performance vacuum electronic devices

Study on the layering phenomenon of SiC porous layer fabricated by constant current electrochemical etching

Advancements in silicon carbide-based supercapacitors: materials, performance, and emerging applications

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