Large reverse biased safe operating area for a low loss HiGT

Abstract

Abstrarf-A Higkconauctrvity IGBT (HiGT) with a merse biased safe opeatbig area (RBSOA) as large as Umt of a conventional IGBT has been presented. Ihe falricated HiGT has a rated CUTW of 50 A and 8 blocking capability of 3.3 kV, Optimizing the concenhation of i q n u i k is the hole berrfa Inyer embled the E T to tun ofla current twice the rated fllpDnt by applying 2uIo V, which is the mnximum voltage of the 1580-V l h l b i s targe W O A m s mintaimxi while achieving a short cirarit cellaaifity and a betk tmde-ofl relation between the colleetoremhs satuatlon voltage (Vm(sat)) ami the turroff loss. nK Vce(&at) of this op(hnized HCT WBS 1 3 V lower than that of a conventional IGBT. The hrn-off loss, short circuit capability, a d Stptic anddymmicsvalanehe voltages were equivalent to those of conventioml IGBT.