Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure

Schottky Barriers Based on Nanoporous InP with Gold Nanoparticles

“…The optimum amount of metal in the pores and its location require further investigations. Furthermore, this technique allows to deposit the nanoparticles of other metals, such as platinum for example, which may lead to an increase in the photocurrent of the structure [7][8][9].…”

“…The factor of non-ideality n = 3-6 and saturation current I o = 0.1- . This can be explained by the increase in the contact area between Au and the semiconductor, mainly due to a contact inside the pores, thus increasing the average barrier height [9] and reducing surface leakage currents.…”

“…Therefore, many modifications of electrochemical etching are proposed, for example, the two-step anodiccathodic reaction method [4]. Fabrication of the inclusions of noble metals such as Pt and Au inside the pores in InP and GaP in different forms (nanodots, nanoparticles, nanotubes) is reported in [5][6][7][8][9][10], and to obtain uniform deposition of metal, pulsed electroplating was used [5][6][7][8][9]. Local plasmon excitation in metal nanoparticles leads to localization, concentration, and local enhancement of electromagnetic fields in their vicinity, thus causing an enhancement of many photophysical phenomena such as photoluminescence, infrared absorption, Raman scattering [10], and photocurrent of barrier structures (plasmonic photovoltaics) [11].…”

“…Local plasmon excitation in metal nanoparticles leads to localization, concentration, and local enhancement of electromagnetic fields in their vicinity, thus causing an enhancement of many photophysical phenomena such as photoluminescence, infrared absorption, Raman scattering [10], and photocurrent of barrier structures (plasmonic photovoltaics) [11]. A photoelectric conversion device based on an InP porous structure was proposed in a few papers [9,12], utilizing the large surface area inside pores and the low reflectance from the porous surface. The initial enhancement of the photocurrent response which is mostly due to decreased light reflection and the redshift of the absorption edge of the photocurrent spectra are observed [13].…”

Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices

“…In addition, we have recently reported that an extremely low reflectance of below 0.4% was observed for porous InP in the UV, visible, and near-infrared ranges [20]. These findings suggest that porous structures are promising materials for use in photoelectric conversion devices such as solar cells [21,22] and photo detectors [23]. Therefore, the optical absorption properties of porous structures need to be determined so they can be used in such devices.…”