Large on/off current ratio in hybrid graphene/BN nanoribbons by transverse electric field-induced control of bandgap

Tran, Van-Truong; Saint-Martin, Jérôme; Dollfus, Philippe

doi:10.1063/1.4893697

Cited by 23 publications

(26 citation statements)

References 32 publications

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“…Hence, it is still required to build a robust set of TB parameters that can adequately reproduce not only bandgaps but also the band shapes of nanoribbons predicted by DFT. Because the bandgap is associated directly to on/off states of devices [23] and the slope of the bands defines the group velocities and the effective masses of electrons, [24,25] the accuracy of these factors may thus affect the conclusions in a large range of transport problems.…”

Section: Introductionmentioning

confidence: 99%

Third nearest neighbor parameterized tight binding model for graphene nano-ribbons

et al. 2017

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The ab initio band structure of 2D graphene sheet is well reproduced by the third nearest neighbor tight binding model proposed by Reich et al [Phys. Rev. B 66, 035412]. For ribbon structures, the existing sets of tight binding parameters can successfully explain semi-conducting behavior of all armchair ribbon structures. However, they are still failing in describing accurately the slope of the bands while this feature is directly associated to the group velocity and the effective mass of electrons. In this work, both density functional theory and tight binding calculations were performed and a new set of tight binding parameters up to the third nearest neighbors including overlap terms is introduced. The results obtained with this model offer excellent agreement with the predictions of the density functional theory in most cases of ribbon structures, even in the highenergy region. Moreover, this set can induce electron-hole asymmetry as manifested in density functional theory. Relevant outcomes are also demonstrated for armchair ribbons of various widths as well as for zigzag structures, thus opening a route for multi-scale simulations.

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Section: Introductionmentioning

confidence: 99%

Third nearest neighbor parameterized tight binding model for graphene nano-ribbons

et al. 2017

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“…Computational methods are not only able to give insight into the electronic, magnetic, optical, and transport properties of the graphene‐BN planar nanostructures, but also can aid in the design of efficient devices. Electronic switches, spin filters, and electromechanic sensors based on G‐BN hybrid sheets have been computationally explored …”

Section: Physical Propertiesmentioning

confidence: 99%

“…Electronic switches, spin filters, and electromechanic sensors based on G-BN hybrid sheets have been computationally explored. [68][69][70][71] By using tight-binding simulations, Tran et al claimed that the band gap of the armchair BN nanoribbons embedded graphene sheet could be strongly suppressed with the increase of the transverse electric field. 68 Furthermore, with the calculation of nonequilibrium Green's function, they have successfully achieved an on/off ratio higher than 10 4 at room temperature thanks to the electric field effect.…”

Section: Device Applicationsmentioning

confidence: 99%

Recent advances in hybrid graphene‐BN planar structures

Kan

Sun

2015

WIREs Comput Mol Sci

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Among the hotly investigated two‐dimensional (2D) materials, the hybrid graphene‐BN sheet is of special interest in the single‐atomic sheet family. Since graphene and BN sheet are the two most widely studied 2D materials, and they have the least lattice mismatch with each other while exhibiting very distinctive properties. Therefore, the hybridization between them provides unique flexibilities in tuning the properties which can change from nonmagnetic to ferromagnetic and from semiconducting to half‐metallic. The most impressive trait is that different from the functionalized graphene and BN sheet by hydrogenation, fluorination, or metal doping for the band engineering, the hybrid graphene‐BN sheet with similar properties remains single‐atomic. The combinations of different patterns with different sizes make the hybrid sheet rich in functionalities going beyond other 2D materials. In this overview, we briefly summarize the recent advances in hybrid graphene‐BN sheet, focusing on the modulations of physical and chemical properties by changing the hybrid configurations. Future research directions in this field are also discussed. WIREs Comput Mol Sci 2016, 6:65–82. doi: 10.1002/wcms.1237 This article is categorized under: Structure and Mechanism > Computational Materials Science

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“…Embedding Graphene with Boron Nitride (nearly same lattice constant with graphene) is one of the effective ways of opening a band gap in gapless graphene [9,10,11,12]. BN nanoribbons (BNNR) [13] possess a higher band gap in comparison to GNR and embedding it with GNR can be effective in increasing the band gap of the nanoribbon [14,15]. Such atomic layers of hybrid Graphene-Boron Nitride have been synthesized experimentally [16] and can be employed in future nanoelectronics.…”

Section: Introductionmentioning

confidence: 99%

Analysis of vacancy defects in hybrid graphene-boron nitride armchair nanoribbon based n-MOSFET at ballistic limit

Chanana

Mahaptra

Sengupta

2015

2015 International Workshop on Computational Electronics (IWCE)

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Here, we report the performance of vacancy affected supercell of a hybrid Graphene-Boron Nitride embedded armchair nanoribbon (a-GNR-BN) based n-MOSFET at its ballistic transport limit using Non Equilibrium Green's Function (NEGF) methodology. A supercell is made of the 3p configuration of armchair nanoribbon that is doped on the either side with 6 BN atoms and is also H-passivated. The type of vacancies studied are mono (B removal), di (B and N atom removal) and hole (removal of 6 atoms) formed all at the interface of carbon and BN atoms. Density Functional Theory (DFT) is employed to evaluate the material properties of this supercell like bandgap, effective mass and density of states (DOS). Further band gap and effective mass are utilized in self-consistent Poisson-Schrodinger calculator formalized using NEGF approach. For all the vacancy defects, material properties show a decrease which is more significant for hole defects. This observation is consistent in the device characteristics as well where ON-current (ION ) and Sub Threshold Slope (SS) shows the maximum increment for hole vacancy and increase is more significant becomes when the number of defects increase.

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Large on/off current ratio in hybrid graphene/BN nanoribbons by transverse electric field-induced control of bandgap

Cited by 23 publications

References 32 publications

Third nearest neighbor parameterized tight binding model for graphene nano-ribbons

Third nearest neighbor parameterized tight binding model for graphene nano-ribbons

Recent advances in hybrid graphene‐BN planar structures

Analysis of vacancy defects in hybrid graphene-boron nitride armchair nanoribbon based n-MOSFET at ballistic limit

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