Large on/off current ratio and low leakage current poly-Si TFTs with multichannel structure

Unagami, Takashi; Kogure, Osamu

doi:10.1109/16.7414

Cited by 25 publications

(7 citation statements)

References 20 publications

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“…However, the applications of Ni-MILC poly-Si TFTs remain limited, because the grain boundaries of poly-Si in the channel region substantially degrade performance. The electrical characteristics of the TFTs can be improved by reducing the number of defects in the poly-Si grain boundaries in the channel, and poly-Si TFTs with several multichannels have been reported to effectively reduce grain boundary defects [3], [4]. The Ni-MILC poly-Si TFT suffers from higher leakage current because of Ni contamination during MILC annealing [2], [5], [6] than those by solid phase crystallization and laser crystallization.…”

Section: Reduction Of Leakage Current In Metal-inducedmentioning

confidence: 99%

Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels

Chang

Liu³

et al. 2005

IEEE Electron Device Lett.

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This letter addresses the leakage current in nickel (Ni) metal-induced lateral crystallization (Ni-MILC) polysilicon thin-film transistors (poly-Si TFTs) with multiple nanowire channels and dual-gate. Experimental results reveal that applying multiple nanowire channels improves the Ni-MILC poly-Si TFT performance. However, the leakage current of both single-gate with single-channel and multiple nanowire channels remains high ( 10 8 A), because of the field emission of carriers through the poly-Si grain traps and the defects caused by Ni contamination. Applying the dual-gate structure can suppress the electrical filed in the drain depletion region, significantly reducing the leakage current of the Ni-MILC poly-Si TFT, increasing the ON/OFF ratio. Index Terms-Dual-gate, metal-induced lateral crystallization (MILC), nanowire, thin-film transistor (TFT).

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Section: Reduction Of Leakage Current In Metal-inducedmentioning

confidence: 99%

Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels

Chang

Liu³

et al. 2005

IEEE Electron Device Lett.

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“…However, the applications of Ni-MILC poly-Si TFTs remain limited, because the grain boundaries of poly-Si in the channel region T.-C. Chang is with Department of Physics and Institute of Electro-Optical Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung substantially degrade performance. The electrical characteristics of the TFTs can be improved by reducing the number of defects in the poly-Si grain boundaries in the channel, and poly-Si TFTs with several multichannel have been reported to effectively reduce grain boundary defects [3], [4]. The Ni-MILC poly-Si TFT suffers from severe leakage current because of Ni contamination during MILC annealing [2], [5], [6], which is directly related to the lateral electrical field in the drain depletion region in the off-state.…”

Section: Introductionmentioning

confidence: 99%

High-performance metal-induced lateral-crystallization polysilicon thin-film transistors with multiple nanowire channels and multiple gates

Chang

Liu

et al. 2006

IEEE Trans. Nanotechnology

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In this study, pattern-dependent nickel (Ni) metalinduced lateral-crystallization (Ni-MILC) polysilicon thin-film transistors (poly-Si TFTs) with ten nanowire channels and multigate structure were fabricated and characterized. Experimental results reveal that applying ten nanowire channels improves the performance of an Ni-MILC poly-Si TFT, which thus has a higher ON current, a lower leakage current, and a lower threshold voltage ( th ) than single-channel TFTs. Furthermore, the experimental results reveal that combining the multigate structure and ten nanowire channels further enhances the entire performance of Ni-MILC TFTs, which thus have a low leakage current, a high ON/OFF ratio, a low th , a steep subthreshold swing, and kink-free output characteristics. The multigate structure with ten-nanowirechannel Ni-MILC TFTs has a few poly-Si grain boundary defects, a low lateral electrical field, and a gate-channel shortening effect, all of which are associated with such high-performance characteristics.Index Terms-Metal-induced lateral-crystallization (MILC), multigate, nanowire, thin-film transistor (TFT).

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“…Hence, it is very essential to minimize the grain boundary defects in order to improve the electrical characteristics of poly-Si TFTs. It has been reported that the poly-Si TFTs with several multichannels can effectively reduce the grain boundary defects [5]- [7]. Moreover, the TFT characteristics are dramatically improved with a reduced channel width, particularly when the channel width is close to the grain size [8], [9].…”

Section: Introductionmentioning

confidence: 99%

Multichannel Poly-Si Thin-Film Transistors Prepared by Excimer Laser Annealing With Channel Width Comparable or Smaller Than the Grain Size

Yang

Kuo

Lee³

2008

IEEE Trans. Electron Devices

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This paper presents results on low-temperature (< 500 • C) multichannel poly-Si thin-film transistors (TFTs) prepared by KrF excimer laser annealing with a channel width that is comparable to or smaller than the poly-Si grain size. The crosssectional scanning electron microscope is used to measure the effective channel width, and TCAD software is used to simulate the electron density distribution in the channel region. It is found that the TFTs with ten 40-nm-wide multichannels have superior electrical characteristics, including a higher on/off current ratio (> 10 7 ), lower leakage current (8.8×10 −14 A), less grain boundary defects density, and a better subthreshold swing (0.45 V/dec).

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Large on/off current ratio and low leakage current poly-Si TFTs with multichannel structure

Cited by 25 publications

References 20 publications

Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels

Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels

High-performance metal-induced lateral-crystallization polysilicon thin-film transistors with multiple nanowire channels and multiple gates

Multichannel Poly-Si Thin-Film Transistors Prepared by Excimer Laser Annealing With Channel Width Comparable or Smaller Than the Grain Size

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