Large negative magnetoresistance driven by enhanced weak localization and Kondo effect at the interface of 
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 and Fe-doped 
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Xue, Hongxia; Hong, Yanpeng; Li, Chengjian; Meng, Jianchao; Li, Yongchun; Liu, Kejian; Liu, Mingrui; Jiang, Weimin; Zhang, Zhe; He, Lin; Dou, Rui-Fen; Xiong, Chao; Nie, Jia-Cai

doi:10.1103/physrevb.98.085305

Cited by 19 publications

(16 citation statements)

References 69 publications

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“…The resistance increases as a result of Kondo scattering of magnetic impurities. As temperature further decreases, the Kondo scattering is inhibited because of the formation of a singlet state between a localized Mn moment and a conduction electron, which screens the magnetic moments of the impurities (37).…”

Section: Kondo Effect and Gap Opening By Extended Mn Dopingmentioning

confidence: 99%

Kondo physics in antiferromagnetic Weyl semimetal Mn _{3+
x} Sn _{1−
x} films

et al. 2020

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Topology and strong electron correlations are crucial ingredients in emerging quantum materials, yet their intersection in experimental systems has been relatively limited to date. Strongly correlated Weyl semimetals, particularly when magnetism is incorporated, offer a unique and fertile platform to explore emergent phenomena in novel topological matter and topological spintronics. The antiferromagnetic Weyl semimetal Mn3Sn exhibits many exotic physical properties such as a large spontaneous Hall effect and has recently attracted intense interest. In this work, we report synthesis of epitaxial Mn3+xSn1−x films with greatly extended compositional range in comparison with that of bulk samples. As Sn atoms are replaced by magnetic Mn atoms, the Kondo effect, which is a celebrated example of strong correlations, emerges, develops coherence, and induces a hybridization energy gap. The magnetic doping and gap opening lead to rich extraordinary properties, as exemplified by the prominent DC Hall effects and resonance-enhanced terahertz Faraday rotation.

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Section: Kondo Effect and Gap Opening By Extended Mn Dopingmentioning

confidence: 99%

Kondo physics in antiferromagnetic Weyl semimetal Mn _{3+
x} Sn _{1−
x} films

et al. 2020

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“…However, compared to other layered ternary chalcogenides and conventional semiconductors, FeNbTe 2 exhibits a puzzle electronic transport behaviors, i.e., resistivity slightly increases 10% as temperature decreases (Figure b), which is converse to other metallic layered ternary chalcogenides, however, the speed of resistance changing with temperature is significantly smaller than conventional semiconductors. This abnormal electronic transport behavior is usually discovered in low‐dimensional disordered structure, such as doped system, which is generally accompanied with nMR . Therefore, it is reasonable to expect that the FeNbTe 2 should be a promising candidate presenting nMR property, while it has not been reported so far.…”

mentioning

confidence: 99%

Intrinsic Negative Magnetoresistance in Van Der Waals FeNbTe₂ Single Crystals

Bai

Wang

et al. 2019

Advanced Materials

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Magnetoresistance, the dependence of resistivity on the applied magnetic field, provides the opportunity to manipulate and utilize the electronic spin degree of freedom, which is not only a long‐term frontier field of solid‐state physics but also the cornerstone of information storage technology. However, the negative magnetoresistance (nMR) is a relatively rare case of magnetoresistance in which the microscopic origin is still elusive and for which it is difficult to define a general interpretation. Herein, an experimental case of an intrinsic unsaturated nMR is demonstrated in van der Waals FeNbTe2 single crystal. The clear‐cut evidence in angle‐resolved photoemission spectroscopy (ARPES), the electronic transport measurement, and DC/AC magnetic susceptibility confirms that the intrinsic unsaturated nMR is derived from the comprehensive effect of Anderson localization and a spin glass state. Taking into consideration that intrinsic unsaturated nMR has so far been rarely reported, especially in van der Waals structures, it is anticipated that this work will not only lead to a deep understanding of the inherent microcosmic mechanism but will also serve as a guide to broaden the research of spintronics and information storage based on magnetoresistance.

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“…The final and the direct approach towards magnetic 2DEGs is the conventional doping with magnetic ions. [94][95][96] For example, a robust anomalous Hall effect 95 and large negative magnetoresistance 96 were observed when Fe-doped STO (Fe-STO) was used as the substrate for the fabrication of the conducting interface of LAO/Fe-STO. The anomalous Hall effect has been observed up to room temperature.…”

Section: Magnetic 2degs At Sto-based Heterointerfacesmentioning

confidence: 99%

Progress and Perspectives of Atomically Engineered Perovskite Oxide Interfaces for Electronics and Electrocatalysts

Chen

Green

2019

Adv Materials Inter

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Large negative magnetoresistance driven by enhanced weak localization and Kondo effect at the interface of LaAlO3 and Fe-doped SrTiO3

Cited by 19 publications

References 69 publications

Kondo physics in antiferromagnetic Weyl semimetal Mn _{3+
x} Sn _{1−
x} films

Kondo physics in antiferromagnetic Weyl semimetal Mn _{3+
x} Sn _{1−
x} films

Intrinsic Negative Magnetoresistance in Van Der Waals FeNbTe₂ Single Crystals

Progress and Perspectives of Atomically Engineered Perovskite Oxide Interfaces for Electronics and Electrocatalysts

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Large negative magnetoresistance driven by enhanced weak localization and Kondo effect at the interface of LaAlO3 and Fe-doped SrTiO3

Cited by 19 publications

References 69 publications

Kondo physics in antiferromagnetic Weyl semimetal Mn 3+ x Sn 1− x films

Kondo physics in antiferromagnetic Weyl semimetal Mn 3+ x Sn 1− x films

Intrinsic Negative Magnetoresistance in Van Der Waals FeNbTe2 Single Crystals

Progress and Perspectives of Atomically Engineered Perovskite Oxide Interfaces for Electronics and Electrocatalysts

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Product

Resources

About

Kondo physics in antiferromagnetic Weyl semimetal Mn _{3+
x} Sn _{1−
x} films

Kondo physics in antiferromagnetic Weyl semimetal Mn _{3+
x} Sn _{1−
x} films

Intrinsic Negative Magnetoresistance in Van Der Waals FeNbTe₂ Single Crystals