Large memcapacitance and memristance at Nb:SrTiO3/La0.5Sr0.5Mn0.5Co0.5O3-δ topotactic redox interface

Acevedo, Walter; Bosch, C. A. M. van den; Aguirre, Myriam H.; Enrique, Carlos; Cavallaro, Antonino; Ferreyra, C.; Sánchez, M. J.; Patrone, L.; Aguadero, Ainara; Rubi, D.

doi:10.1063/1.5131854

Cited by 9 publications

(18 citation statements)

References 40 publications

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“…The device presents retention times for both resistive states of at least 10 4 s (not shown here). From the analysis and modelling of dynamic I-V curves, we showed that the memristive behavior originates at the NSTO/LSMCO interface upon oxidation/reduction of LSMCO [24]. We have successfully simulated the experimental HSL by assuming that LSMCO is in contact with an oxygen reservoir that allows the necessary oxygen release and uptake for the topotactic redox behavior, as shown in Ref.…”

Section: Characterization Of Voltage-controlled Devicesmentioning

confidence: 87%

“…A very interesting topotactic redox perovskite is La 1/2 Sr 1/2 Mn 1/2 Co 1/2 O 3−x (LSMCO), which displays and oxidized -more conducting-phase with x = 0 and a rhomboedral R 3c structure, as well as a reduced -more resistive-phase with x =0.62 and an orthorombic Pbnm structure [23]. We have shown [24] that epitaxial Nb:SrTiO 3 /LSMCO structures display a robust memristive behavior concomitant with a memcapacitive effect -reversible change in the capacitance between different non-volatile states [25][26][27][28][29][30][31][32][33]-. The memcapacitance found in this system -C HIGH /C LOW ≈ 900 at 10 kHz and ≈ 100 at 150 kHz-was the highest reported to date by a factor of ≈ 10 and originates at the NSTO/LSMCO interface, where a switchable p-n diode is formed [24].…”

Section: Introductionmentioning

confidence: 85%

“…Figures 3(a the formation of a n-p diode at the NSTO-LSMCO interface (we recall that NSTO and LSMCO are n-and ptype materials, respectively [24,35]). We also notice that, from the p-character of LSMCO and the high work function of Pt (5.6 eV), we expect a LSMCO/Pt quasi-ohmic interface.…”

Section: Characterization Of Voltage-controlled Devicesmentioning

confidence: 99%

“…We have shown [24] that epitaxial Nb:SrTiO 3 /LSMCO structures display a robust memristive behavior concomitant with a memcapacitive effect -reversible change in the capacitance between different non-volatile states [25][26][27][28][29][30][31][32][33]-. The memcapacitance found in this system -C HIGH /C LOW ≈ 900 at 10 kHz and ≈ 100 at 150 kHz-was the highest reported to date by a factor of ≈ 10 and originates at the NSTO/LSMCO interface, where a switchable p-n diode is formed [24]. Memcapacitance presents a high potential for the development of neuromorphic applications; for instance, it has been proposed that a memcapacitor-based neural network for image recognition can perform in a similar way that one based on memristors, but with a power consumption about 1000 times lower [34].…”

Section: Introductionmentioning

confidence: 98%

“…Memcapacitance presents a high potential for the development of neuromorphic applications; for instance, it has been proposed that a memcapacitor-based neural network for image recognition can perform in a similar way that one based on memristors, but with a power consumption about 1000 times lower [34]. In our previous work on multi-mem LSMCO, we found that the electroforming process is accompanied by a strong oxygen release and thermal effects that affect the nanostructure of the device and decouples the active zone from the rest of the device, hampering the possibility of implementing these systems in cross-bar arrays [24]. In this paper, we perform a systematic study of different alternatives to limit devices damage and preserve their structural integrity, chemistry and multi-mem behavior, in order to allow their integration in multiple devices architectures such as cross-bar arrays, suitable for neuromorphic or in-memory computing.…”

Section: Introductionmentioning

confidence: 99%

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Optimization of the multi-mem response of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$

Acevedo,

Aguirre,

Ferreyra

et al. 2021

Preprint

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Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities such as memcapacitance could significantly improve the performance of bio-inspired devices in key issues such as energy consumption. However, the physics of mem-systems is not fully understood so far, hampering their large-scale implementation in devices. Perovskites that undergo topotactic transitions and redox reactions show improved performance as mem-systems, compared to standard perovskites. In this paper we analyze different strategies to optimize the multi-mem behavior (memristive and memcapacitive) of topotactic redox La 1/2 Sr 1/2 Mn 1/2 Co 1/2 O3−x (LSMCO) films grown on Nb:SrTiO3 (NSTO). We explored devices with different crystallinity (from amorphous to epitaxial LSMCO), out-of-plane orientation (( 001) and ( 110)) and stimulated either with voltage or current pulses. We found that an optimum memory response is found for epitaxial (110) LSMCO stimulated with current pulses. Under these conditions, the system efficiently exchanges oxygen with the environment minimizing, at the same time, self-heating effects that trigger nanostructural and chemical changes which could affect the device integrity and performance. Our work contributes to pave the way for the integration of LSMCO-based devices in cross-bar arrays, in order to exploit their memristive and memcapacitive properties for the development of neuromorphic or in-memory computing devices

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Section: Characterization Of Voltage-controlled Devicesmentioning

confidence: 87%

Section: Introductionmentioning

confidence: 85%

Section: Characterization Of Voltage-controlled Devicesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Optimization of the multi-mem response of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$

Acevedo,

Aguirre,

Ferreyra

et al. 2021

Preprint

Self Cite

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Realizing Metastable Cobaltite Perovskite via Proton-Induced Filling of Oxygen Vacancy Channels

Wang

Chen

et al. 2022

ACS Appl. Mater. Interfaces

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The interaction between transition-metal oxides (TMOs) and protons has become a key issue in magneto-ionics and proton-conducting fuel cells. Until now, most investigations on oxide−proton reactions rely on electrochemical tools, while the direct interplay between protons and oxides remains basically at simple dissolution of metal oxides by an acidic solution. In this work, we find classical TMO brownmillerite SrCoO 2.5 (B-SCO) films with ordered oxygen vacancy channels experiencing an interesting transition to a metastable perovskite phase (M-SCO) in a weak acidic solution. M-SCO exhibits a strong ferromagnetism (1.01 μ B /Co, T c > 200 K) and a greatly elevated electrical conductivity (∼10 4 of pristine SrCoO 2.5 ), which is similar to the prototypical perovskite SrCoO 3 . Besides, such M-SCO tends to transform back to B-SCO in a vacuum environment or heating at a relatively low temperature. Two possible mechanisms (H 2 O addition/active oxygen filling) have been proposed to explain the phenomenon, and the control experiments demonstrate that the latter mechanism is the dominant process. Our work finds a new way to realize cobaltite perovskite with enhanced magnetoelectric properties and may deepen the understanding of oxide−proton interaction in an aqueous solution.

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Optimization of the multi-mem response of topotactic redox La1/2Sr1/2Mn1/2Co1/2O3−x

et al. 2022

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Memristive systems emerge as strong candidates for the implementation of resistive random access memories and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities, such as memcapacitance, could significantly improve the performance of bio-inspired devices in key issues, such as energy consumption. However, the physics of mem systems is not fully understood so far, hampering their large-scale implementation in devices. Perovskites that undergo topotactic transitions and redox reactions show improved performance as mem systems, compared to standard perovskites. In this paper, we analyze different strategies to optimize the multi-mem behavior (memristive and memcapacitive) of topotactic redox La1/2Sr1/2Mn1/2Co1/2O3−x (LSMCO) films grown on Nb:SrTiO3. We explored devices with different crystallinities (from amorphous to epitaxial LSMCO), out-of-plane orientation [(001) and (110)], and stimulated either with voltage or current pulses. We found that an optimum memory response is found for epitaxial (110) LSMCO stimulated with current pulses. Under these conditions, the system efficiently exchanges oxygen with the environment minimizing, at the same time, self-heating effects that trigger nanostructural and chemical changes that could affect the device integrity and performance. Our work contributes to pave the way for the integration of multi-mem topotactic redox oxide-based interfaces in multiple device architectures, in order to exploit their memristive and memcapacitive properties for data storage or neuromorphic computation.

show abstract

Large memcapacitance and memristance at Nb:SrTiO3/La0.5Sr0.5Mn0.5Co0.5O3-δ topotactic redox interface

Cited by 9 publications

References 40 publications

Optimization of the multi-mem response of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$

Optimization of the multi-mem response of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$

Realizing Metastable Cobaltite Perovskite via Proton-Induced Filling of Oxygen Vacancy Channels

Optimization of the multi-mem response of topotactic redox La1/2Sr1/2Mn1/2Co1/2O3−x

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