Large magnetoresistance observed in facing-target sputtered Ni-doped CNx amorphous composite films

Wang, Xiaocong; Mi, Wenbo; Jiang, E. Y.; Bai, Haili

doi:10.1016/j.actamat.2007.02.004

Cited by 16 publications

(6 citation statements)

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“…Therefore, metal loading is a feasible method to improve catalytic efficiency. Besides, metal loading can improve other properties of g-C3N4 (such as permeability) [17].…”

Section: Preparation Properties and Photocatalytic Study Of Metal-supported G-c3n4mentioning

confidence: 99%

Progress in Photocatalysis of g-C₃N₄ and its Modified Compounds

Wang

2021

E3S Web Conf.

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Recently, graphitic carbon nitride (g-C3N4), a polymeric semiconductorhas been widely used as a low-cost, stable, and metal-free visible-light-active photocatalyst in the sustainable utilization of solar energy, such as water splitting, organic photosynthesis, and environmental remediation, which has attracted world wide attention from energy and environmental relative fields. Base on analysis of structure and theoretical calculation, the reasons that g-C3N4 can be used as a non-metallic catalyst were discussed in this paper. Some group's research jobs that metal-supported g-C3N4, metal-supported g-C3N4/organnic semiconductor compound and heterogeneous junction adjust the semiconductor electronic band structure have been summarized. And the mechanism, effect factors, and research developments on the reaction of organic degradation by photocatalytic and splitting water for hydrogen revolution catalyzed by above-mentioned modified g-C3N4 were emphatically analyzed. Finally, the prospects for the development of highly efficient g-C3N4 based photocatalysts are also discussed.

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“…Therefore, metal loading is a feasible method to improve catalytic efficiency. Besides, metal loading can improve other properties of g-C3N4 (such as permeability) [17].…”

Section: Preparation Properties and Photocatalytic Study Of Metal-supported G-c3n4mentioning

confidence: 99%

Progress in Photocatalysis of g-C₃N₄ and its Modified Compounds

Wang

2021

E3S Web Conf.

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“…However, the observed ferromagnetism is weak and the Curie temperature is often below room temperature. Recently, the interesting magnetoresistance has been observed in the magnetic element added disordered oxide semiconductors with large dopant concentrations, such as FeeIn 2 O 3 [22], CoeZnO [23], NieCN [24], CoeTiO 2 [23,25], and FeeTieO [26].…”

Section: Introductionmentioning

confidence: 99%

A first-principle prediction on the magnetism and electronic structure of Ti-doped CoO with two O vacancies

Zhou

Wang

Chen

et al. 2015

Current Applied Physics

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“…13,14) In our previous work, a large negative MR ($59%) was observed in the amorphous Ni-CN x films, 15,16) which was attributed to a spin-related high-order tunneling process with a spin polarization of P ¼ P 0 expðÀT Þ, where P 0 is the spin polarization of the ferromagnetic metal at 0 K, T is the temperature and , are the coefficients. 15,16) It is known that the band gap of CN x can be changed in a wide range of 0-3 eV, 17) so the interface between the amorphous Ni-CN x and Si wafer should be different from that in the ferromagnetic metal/SC heterostructures. Thus, it is interesting to investigate its electronic transport properties across the interface.…”

mentioning

confidence: 94%

“…XPS results show that the Ni-CN x layer is composed of metallic Ni, Ni carbides and/or Ni nitrides, and carbon nitrides. 15,16) Figure 2(a) shows the current-to-voltage (I-V ) curves of the amorphous Ni-CN x /p-Si heterostructure. The top-left inset of Fig.…”

mentioning

confidence: 99%

Positive Magnetoresistance in Amorphous Ni–CN$_{x}$/p-Si Heterostructure

Wang¹,

Ma²,

Mi³

2012

Appl. Phys. Express

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Current-perpendicular-to-plane transport properties of amorphous Ni–CNx/p-Si heterostructure have been investigated. In the reverse range, where the electrons are injected from the amorphous Ni–CNx to p-Si, the positive magnetoresistance (MR) can be attributed to the formation of a spin-polarized barrier by the exchange interaction between electrons in the accumulation electron layer in Si and d electrons of Ni, which is further confirmed by the temperature-peak-type MR. In the forward range, where the electrons are injected from p-Si to the amorphous Ni–CNx, a positive MR of ∼90% is observed at 100 K under a 0.01-mA current and a 90-kOe magnetic field, which may be related to the peak in the resistance-to-current curves around 0.01 mA at low temperatures.

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Large magnetoresistance observed in facing-target sputtered Ni-doped CNx amorphous composite films

Cited by 16 publications

References 20 publications

Progress in Photocatalysis of g-C₃N₄ and its Modified Compounds

Progress in Photocatalysis of g-C₃N₄ and its Modified Compounds

A first-principle prediction on the magnetism and electronic structure of Ti-doped CoO with two O vacancies

Positive Magnetoresistance in Amorphous Ni–CN$_{x}$/p-Si Heterostructure

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Large magnetoresistance observed in facing-target sputtered Ni-doped CNx amorphous composite films

Cited by 16 publications

References 20 publications

Progress in Photocatalysis of g-C3N4 and its Modified Compounds

Progress in Photocatalysis of g-C3N4 and its Modified Compounds

A first-principle prediction on the magnetism and electronic structure of Ti-doped CoO with two O vacancies

Positive Magnetoresistance in Amorphous Ni–CN$_{x}$/p-Si Heterostructure

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Product

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Progress in Photocatalysis of g-C₃N₄ and its Modified Compounds

Progress in Photocatalysis of g-C₃N₄ and its Modified Compounds