Large-grained oriented polycrystalline silicon thin films prepared by nickel-silicide-induced crystallization

DEPOSITION AND CHARACTERIZATION OF ZnO:Al FILMS FOR APPLICATION AS ANTIREFLECTIVE IN POLYCRYTALLINE SOLAR CELLS

“…Una vez encontradas las condiciones experimentales de depósito de ZnO:Al, que da un material apropiado para ser usado como antirreflectivo en celdas solares, se depositó una lámina delgada de a-Si:H mediante RF-PECVD con los parámetros de depósito mencionados en la parte experimental, de espesor aproximado de 250 nm sobre la película de ZnO:Al. Posteriormente, se cristalizó a 580 o C para obtener p-Si, usando el método NIC (6,7) .…”

“…Recibido 28/02/11; aprobado 10/08/11 c) Cristalización inducida por Níquel (NIC) (6,7) : usando el método NIC es posible obtener tamaños de grano mayores de 100 μm, tanto en películas delgadas como en aquéllas a ser usadas como láminas semilla. El Ni también precipita en los bordes de grano, pero en los casos de láminas semilla puede ser eliminado por tratamiento químico selectivo.…”

Perspectives on metal induced crystallization of a-Si and a-Ge thin films

“…Several researchers have used PECVD technique to prepare a-Si and a-Ge thin lms on different substrates. [80][81][82][83][84][85] Haque et al 80 employed an ultra-high vacuum (UHV) PECVD method with the base pressure of 8 × 10 −7 torr at 250 °C (deposition pressure: 500 mTorr, and power density: 50 mW cm −2 ) to deposit phosphorus-doped a-Si:H lms on the oxidized silicon and glass substrates. Choi et al 81 deposited a-Si:H lm (50 nm) on glass by PECVD method with a RF power density of 0.27 W cm −2 at a temperature of 270 °C using a 25% silane and 75% hydrogen mixture.…”

“…Choi et al 81 deposited a-Si:H lm (50 nm) on glass by PECVD method with a RF power density of 0.27 W cm −2 at a temperature of 270 °C using a 25% silane and 75% hydrogen mixture. Giangregorio et al 82 deposited a-Ge (500 nm) on p-type c-Si (100) by PECVD method using GeH 4 : H 2 (∼2 : 38) mixture at a pressure of 0.28 torr, temperature of 275 °C, and an RF power of 3 W. Schmidt et al 83 employed PECVD method to deposit a-Si on a glass plate using reactant gases like silane (SiH 4 ), phosphine (PH 3 , forn-type doping) and diborane (B 2 H 6 , forp-type doping), without hydrogen dilution at a temperature of 200 °C, at a pressure of 600 mbar and power density of 120 mW cm −2 (frequency 50 MHz). Peng et al 84 used a radio frequency (13.56 MHz) capacitive-coupled PECVD system in Ar and GeH 4 (H 2 dilution) mixture with a total ow of 20 sccm to deposit a-Ge:H thin lms (∼1 mm thickness) on the surface of Al lms at 200 °C.…”

“…The MIC was studied on PECVD deposited amorphous semiconductor lms in contact with different metals by annealing the bilayer systems in the temperature range of 170-300 °C. [80][81][82][83][84][85] The HWCVD is also known as catalytic CVD, is a new technology for depositing amorphous-semiconductors thin lms at low temperatures without the use of plasma to decompose source gases. [86][87][88] Ebil et al 86 deposited a-Si lm (of 500-1000 nm thickness) by custom mode HWCVD system with load lock (base pressure of 6.67 × 10 −5 Pa) at a lament temperature of 430-1850 °C and deposition pressure of 3.33 Pa; silane was used as the source gas without hydrogen dilution.…”