Large gap two-dimensional topological insulators with the coexistence of a significant Rashba effect and piezoelectricity in functionalized PbGe monolayers

Shen, Ningyuan; Lei, Shuangying; Wang, Y. H.; Wan, Neng; Chen, Jie; Huang, Qing‐An

doi:10.1039/d2nr05912f

Cited by 2 publications

(3 citation statements)

References 45 publications

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“…Piezoresistive pressure sensors, which work by converting the external pressure stimulus they receive into a measurable resistance value, are the most popular because of their straightforward design, low price, and straightforward signal acquisition technique. This resistance value can change because of modifications made to the sensor’s structure, contact resistance between the electrodes, or nanomaterial-based conductive paths. − Combined with evolving integration processes, 2D materials will bring unlimited possibilities for multifunctional smart device applications, such as graphene, − black phosphorus, − topological insulators, MXene materials, − transition metal dichalcogenides (TMDs), − etc., with unique and excellent electrical, optical, magnetic, and mechanical properties that show superior performance in pressure sensor applications. Among them, monolayer molybdenum disulfide (MoS 2 ) is considered to be a promising candidate material for high-performance and future flexible nanoelectronics .…”

Section: Introductionmentioning

confidence: 99%

Bending Direction-Related Anisotropic Transport Characteristics of Two-Dimensional Janus MoSSe Devices

Lu,

Tao,

Cong

et al. 2024

ACS Appl. Electron. Mater.

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Sensing external pressure and generating a corresponding signal are important functions of a sensor device. The creation of bidirectional pressure sensors has vital applications in automation control, human−computer interface, and other domains. However, at present, bidirectional pressure sensors have not been widely developed and applied, and sensing the direction of pressure is also important for sensors. Because it breaks the out-of-plane symmetry, the Janus material is a promising material that can be used as a sensitive element for bidirectional pressure sensors. In this work, we theoretically proposed a bending two-dimensional Janus MoSSe material-based device model. It was found that p-and n-type doped devices generate ohmic and Schottky contacts, respectively. Accordingly, the conductance of ptype doped devices is greater than that of n-type doped devices at the same doping concentration. The variation of conductance is anisotropic for different bending directions: with an increasing bending angle, the conductance bent toward the S atom side increases, while the conductance bent toward the Se side gradually decreases. This property of the MoSSe device matches the requirement of the sensitive element of the bidirectional pressure sensors.

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Section: Introductionmentioning

confidence: 99%

Bending Direction-Related Anisotropic Transport Characteristics of Two-Dimensional Janus MoSSe Devices

Lu,

Tao,

Cong

et al. 2024

ACS Appl. Electron. Mater.

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“…But even for this material, the observation was limited to a relatively low temperature of 100 K . The small bulk band gaps and the difficulty in synthesizing high-quality 2D crystals as well as realizing their chemical functionalization could be the primary obstacles hindering the experimental verification of more 2D TIs at higher temperatures. , Therefore, it is of paramount importance to continue the theoretical exploration for 2D TIs with high stability and large nontrivial band gaps. − …”

Section: Introductionmentioning

confidence: 99%

“… 24 , 25 Therefore, it is of paramount importance to continue the theoretical exploration for 2D TIs with high stability and large nontrivial band gaps. 26 − 29 …”

Section: Introductionmentioning

confidence: 99%

Large-Gap Quantum Spin Hall Insulators in Two-Dimensional Hafnium Halides: Unraveling the Impact of Strain and Substrate

Meng,

Pereira,

Van de Vondel

et al. 2024

ACS Omega

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topological insulators (TIs) or quantum spin Hall (QSH) insulators, characterized by insulating 2D electronic band structures and metallic helical edge states protected by time-reversal symmetry, offer a platform for realizing the quantum spin Hall effect, making them promising candidates for future spintronic devices and quantum computing. However, observing a high-temperature quantum spin Hall effect requires large-gap 2D TIs, and only a few 2D systems have been experimentally confirmed to possess this property. In this study, we employ first-principles calculations, combined with a structural search based on an evolutionary algorithm, to predict a class of 2D QSH insulators in hafnium halides, namely, HfF, HfCl, and HfBr with sizable band gaps of 0.12, 0.19, and 0.38 eV. Their topological nontrivial nature is confirmed by a Z 2 invariant which equals to 1 and the presence of gapless edge states. Furthermore, the QSH effect in these materials remains robust under biaxial tensile strain of up to 10%, and the use of h-BN as a substrate effectively preserves the QSH states in these materials. Our findings pave the way for future theoretical and experimental investigations of 2D hafnium halides and their potential for realizing the QSH effect.

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Large gap two-dimensional topological insulators with the coexistence of a significant Rashba effect and piezoelectricity in functionalized PbGe monolayers

Abstract: PbGe(CN)2 and PbGe(C2H)2 (PQSHI) are predicted to realize the piezoelectricity, quantum spin Hall (QSH) insulator, and Rashba effects simultaneously.

Cited by 2 publications

References 45 publications

Bending Direction-Related Anisotropic Transport Characteristics of Two-Dimensional Janus MoSSe Devices

Bending Direction-Related Anisotropic Transport Characteristics of Two-Dimensional Janus MoSSe Devices

Large-Gap Quantum Spin Hall Insulators in Two-Dimensional Hafnium Halides: Unraveling the Impact of Strain and Substrate

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