1991
DOI: 10.1016/0375-9601(91)90995-k
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Large enhancement of spin polarization observed by photoelectrons from a strained GaAs layer

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Cited by 133 publications
(28 citation statements)
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“…Highly-polarized electrons are obtained from GaAs by directing a circularly-polarized laser beam on to a thin (typically 100 nm) p-doped epilayer of strained GaAs [203], of strained InGaAs [204], and of a short period superlattice [205]. Only a small fraction of the photons are absorbed in the epilayer.…”
Section: Polarized Electronsmentioning
confidence: 99%
“…Highly-polarized electrons are obtained from GaAs by directing a circularly-polarized laser beam on to a thin (typically 100 nm) p-doped epilayer of strained GaAs [203], of strained InGaAs [204], and of a short period superlattice [205]. Only a small fraction of the photons are absorbed in the epilayer.…”
Section: Polarized Electronsmentioning
confidence: 99%
“…50 The structure of the photocathode, manufactured at the ANU, 51 is similar to that described previously 52 where values of up to 80% electron spin polarization were achieved. In the present case, however, only ͑50± 4͒% spin polarization is achieved at a laser wavelength of 850 nm.…”
Section: The Anu "E 2e… Spectrometermentioning
confidence: 85%
“…In particular, optical methods, also known as optical spin orientation, use polarized-light irradiation. For example, electrons in the valence band of strained and surface-treated GaAs can be excited by circularly polarized light and emitted with ∼ 80 % spin polarization [4]. GaAs photocathodes are widely used as spin-polarized electron source in lowenergy electron microscopy [5], in accelerators used in high-energy physics [6], etc.…”
mentioning
confidence: 99%