Large Energy, Wavelength Widely Tunable, Topological Insulator Q-Switched Erbium-Doped Fiber Laser

Chen, Yu; Zhao, Chujun; Chen, Shuqing; Du, Juan; Tang, Pinghua; Jiang, Guobao; Zhang, Han; Wen, Shuangchun; Tang, Dingyuan

doi:10.1109/jstqe.2013.2295196

Cited by 234 publications

(134 citation statements)

References 40 publications

Supporting

Mentioning

127

Contrasting

Order By: Relevance

“…Crystal structure of Bi2Te3 with three primitive lattice vectors denoted as t1,2,3 and a quintuple layer as indicated by the red square [3] Experimentally, the first demonstration of passive saturable absorber (SA) of Bi2Te3 for ultrafast fiber laser has been done by drop casting techique on a quartz plate [5]. Since that, the integration of the SA is approached either by evanescent wave interaction [6][7][8][9], sandwiching [7][8] or free space coupling [10] with a wider operating wavelength from 1 μm to 3 μm [6][7][8][9][10]. The TI based passive SA application has been reported by Chen et al [7] and Wu et al [8] by using Bi2Te3.…”

Section: Introductionmentioning

confidence: 99%

“…Since that, the integration of the SA is approached either by evanescent wave interaction [6][7][8][9], sandwiching [7][8] or free space coupling [10] with a wider operating wavelength from 1 μm to 3 μm [6][7][8][9][10]. The TI based passive SA application has been reported by Chen et al [7] and Wu et al [8] by using Bi2Te3. Chen et al [7] synthesized a layer of Bi2Te3 nano-sheets by liquid phase exfoliation (LPE) and then dissolved in isopropyl alcohol.…”

Section: Introductionmentioning

confidence: 99%

“…The TI based passive SA application has been reported by Chen et al [7] and Wu et al [8] by using Bi2Te3. Chen et al [7] synthesized a layer of Bi2Te3 nano-sheets by liquid phase exfoliation (LPE) and then dissolved in isopropyl alcohol. The Bi2Te3 based SA was attached at the fiber end-facet after optical deposition method with central wavelength of 975 nm and maximum power of 500 mW.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Bismuth (III) Telluride (Bi₂Te₃) Based Topological Insulator Embedded in PVA as Passive Saturable Absorber in Erbium-Doped Fiber Laser

Apandi

Ahmad

Ambran

et al. 2017

IOP Conf. Ser.: Mater. Sci. Eng.

View full text Add to dashboard Cite

View the article online for updates and enhancements. Related contentMode-locked Erbium-doped fiber laser generation using hybrid ZnO/GO saturable absorber H. Hassan, M. M. Ariannejad, R. Safaei et al.-A passively mode locked thulium doped fiber laser using bismuth telluride deposited multimode interference M Jung, J Lee, W Song et al. -Harmonically mode-locked Er-doped fiber laser based on a Sb2Te3 topological insulator saturable absorber J Sotor, G Sobon, W Macherzynski et al. Abstract. We demonstrate a passive Q-switched by integrating a Bismuth (III) Telluride (Bi2Te3) dispersed in Polyvinyl Alcohol (PVA) as passive saturable absorber. The experimental works show that the proposed passive saturable absorber operated at input power ranging from 21.69 mW to 126.89 mW with central operating wavelength of 1531 nm. We observe the tunable repetition rate from 40 kHz to 166 kHz with the shortest pulse width of 1.32 μs. The laser produced maximum instantaneous output peak power and pulse energy of 1.62 mW and 11.2 nJ, respectively. The signal to noise ratio was measured at 49 dB which indicates the stability of the generated pulse.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Bismuth (III) Telluride (Bi₂Te₃) Based Topological Insulator Embedded in PVA as Passive Saturable Absorber in Erbium-Doped Fiber Laser

Apandi

Ahmad

Ambran

et al. 2017

IOP Conf. Ser.: Mater. Sci. Eng.

View full text Add to dashboard Cite

show abstract

“…Apart from that, Lin et al [5] demonstrated mechanical exfoliation of bulk Bi 2 Te 3 attached on a fiber connector for soliton compression in the same region [5]. The reported works on passive Qswitching employing Bi 2 Te 3 as passive SA showed a wider operating wavelength at 1m, 1.5µm, 2µm and 3µm [6][7][8][9][10] displaying the broadband operation of a topological insulator (TI). The integration of Bi 2 Te 3 in the laser cavity is approached either by evanescent wave interaction [6][7][8][9], sandwiching [7][8] or free space coupling [10].…”

mentioning

confidence: 99%

“…The reported works on passive Qswitching employing Bi 2 Te 3 as passive SA showed a wider operating wavelength at 1m, 1.5µm, 2µm and 3µm [6][7][8][9][10] displaying the broadband operation of a topological insulator (TI). The integration of Bi 2 Te 3 in the laser cavity is approached either by evanescent wave interaction [6][7][8][9], sandwiching [7][8] or free space coupling [10]. The TI based passive SA application in a 2m region has only been reported by Lee et al [9] using Bi 2 Te 3 and Luo et al [11] using Bismuth (III) Selenide (Bi 2 Se 3 ).…”

mentioning

confidence: 99%

Bismuth (III) Telluride (Bi2Te3) topological insulator embed in PVA as passive Q-switcher at 2 micron region

Ahmad¹,

Ibrahim²,

Sulaiman

et al. 2016

Photon. Lett. Poland

View full text Add to dashboard Cite

Abstract-We demonstrate passive Q-switching in a 2m region by integrating Bismuth (III) Telluride (Bi2Te3) embedded in Polyvinyl Alcohol (PVA). Bi2Te3 was embedded in PVA by a solution casting approach to develop a Bi2Te3-PVA film and integrated in the laser cavity with a ring configuration to generate a pulse laser. The experimental works show that the proposed passive saturable absorber operates at input pump power ranges from 637mW to 784mW with a central wavelength of 1957.6nm. We observed a tunable repetition rate from 12.6kHz to 26.1kHz with the shortest pulse width of 2.22s. The laser produces maximum instantaneous output peak power and pulse energy of 0.42W and 0.94J, respectively.

show abstract

Topological Insulator Materials for Advanced Optoelectronic Devices

Yue

Wang

2019

Advanced Topological Insulators

View full text Add to dashboard Cite

Topological insulators are quantum materials that have an insulating bulk state and a topologically protected metallic surface state with spin and momentum helical locking and a Dirac-like band structure.(1-3) Unique and fascinating electronic properties, such as the quantum spin Hall effect, topological magnetoelectric effects, magnetic monopole image, and Majorana fermions, are expected from topological insulator materials.(4, 5) Thus topological insulator materials have great potential applications in spintronics and quantum information processing, as well as magnetoelectric devices with higher efficiency.(6, 7) Three-dimensional (3D) topological insulators are associated with gapless surface states, and two-dimensional (2D) topological insulators with gapless edge states.(8) The topological surface (edge) states have been mainly investigated by first-principle theoretical calculation, electronic transport, angleresolved photoemission spectroscopy (ARPES), and scanning tunneling microscopy (STM).(9) A variety of compounds have been identified as 2D or 3D topological insulators, including HgTe/CdTe, On the other hand, topological insulator materials also exhibit a number of excellent optical properties, including Kerr and Faraday rotation, ultrahigh bulk refractive index, near-infrared frequency transparency, unusual electromagnetic scattering and ultra-broadband surface plasmon resonances. In details, Dirac plasmon excitations have been observed in Bi 2 Se 3 micro-ribbon arrays at the THz frequency.(13) Ultraviolet and visible frequency plasmonics have been observed in nanoslit and nanocone arrays of Bi 1.5 Sb 0.5 Te 1.8 Se 1.2 crystals.(14, 15) High transparency has been observed in nanometer scale Bi 2 Se 3 nanoplates. Ultrahigh refractive index has been observed in the bulk of Bi 1.5 Sb 0.5 Te 1.8 Se 1.2 crystals and Sb 2 Te 3 thin films.(15, 16) These excellent optical properties enable topological

show abstract

Large Energy, Wavelength Widely Tunable, Topological Insulator Q-Switched Erbium-Doped Fiber Laser

Cited by 234 publications

References 40 publications

Bismuth (III) Telluride (Bi₂Te₃) Based Topological Insulator Embedded in PVA as Passive Saturable Absorber in Erbium-Doped Fiber Laser

Bismuth (III) Telluride (Bi₂Te₃) Based Topological Insulator Embedded in PVA as Passive Saturable Absorber in Erbium-Doped Fiber Laser

Bismuth (III) Telluride (Bi2Te3) topological insulator embed in PVA as passive Q-switcher at 2 micron region

Topological Insulator Materials for Advanced Optoelectronic Devices

Contact Info

Product

Resources

About

Large Energy, Wavelength Widely Tunable, Topological Insulator Q-Switched Erbium-Doped Fiber Laser

Cited by 234 publications

References 40 publications

Bismuth (III) Telluride (Bi2Te3) Based Topological Insulator Embedded in PVA as Passive Saturable Absorber in Erbium-Doped Fiber Laser

Bismuth (III) Telluride (Bi2Te3) Based Topological Insulator Embedded in PVA as Passive Saturable Absorber in Erbium-Doped Fiber Laser

Bismuth (III) Telluride (Bi2Te3) topological insulator embed in PVA as passive Q-switcher at 2 micron region

Topological Insulator Materials for Advanced Optoelectronic Devices

Contact Info

Product

Resources

About

Bismuth (III) Telluride (Bi₂Te₃) Based Topological Insulator Embedded in PVA as Passive Saturable Absorber in Erbium-Doped Fiber Laser

Bismuth (III) Telluride (Bi₂Te₃) Based Topological Insulator Embedded in PVA as Passive Saturable Absorber in Erbium-Doped Fiber Laser