2015
DOI: 10.1016/j.ssc.2015.06.009
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Large effects of epitaxial tensile strain on electrical transport of Mn-doped NdNiO3 thin films

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Cited by 6 publications
(5 citation statements)
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“…Furthermore, these residual strains can be survived with the quench cooling done in this work after annealing. Additionally, it has been reported that octahedral deformation may be induced by the symmetry mismatch between dissimilar octahedral tilt systems. , It will lead to distorted NiO 6 octahedra, resulting in different lattice constants as well as demonstrating different residual strains within the differently oriented epitaxial rare-earth nickelate thin films. , For our samples, the film thickness is as thin as 7 nm. The rigid epitaxy, as shown in Figure e–g, will force the NiO 6 octahedra to remain with the substrate.…”
Section: Resultsmentioning
confidence: 88%
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“…Furthermore, these residual strains can be survived with the quench cooling done in this work after annealing. Additionally, it has been reported that octahedral deformation may be induced by the symmetry mismatch between dissimilar octahedral tilt systems. , It will lead to distorted NiO 6 octahedra, resulting in different lattice constants as well as demonstrating different residual strains within the differently oriented epitaxial rare-earth nickelate thin films. , For our samples, the film thickness is as thin as 7 nm. The rigid epitaxy, as shown in Figure e–g, will force the NiO 6 octahedra to remain with the substrate.…”
Section: Resultsmentioning
confidence: 88%
“…Additionally, it has been reported that octahedral deformation may be induced by the symmetry mismatch between dissimilar octahedral tilt systems. 19,20 It will lead to distorted NiO 6 octahedra, resulting in different lattice constants as well as demonstrating different residual strains within the differently oriented epitaxial rare-earth nickelate thin films. 14,22 For our samples, the film thickness is as thin as 7 nm.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
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“…Also, the transition metals like Cu, Fe, Co, are used as the dopant in bulk LaNiO 3 and NdNiO 3 [33][34][35]. However, in thin films, there are only a few studies performed on Nisite doping [19,20,23,36]. In our earlier investigations, the doping of electrons via larger size tetravalent Mn at Ni site under strain (compressive and tensile) was found responsible for shifting the T MI at higher temperatures and bring a complete insulating state [19,23].…”
Section: Introductionmentioning
confidence: 84%