Large deformation and geometric instability of substrates with thin-film deposits

Finot, M.; Blech, I. A.; Suresh, S.; Fujimoto, H.

doi:10.1063/1.365042

Cited by 112 publications

(86 citation statements)

References 8 publications

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“…Since we have no reason to believe that there is a difference in how a film grows in the two orthogonal directions (aside from an in-plane texture), we expect that the observed difference in curvature is a result of a near-biaxial condition imposed by the sample holder/clamping arrangement. A similar effect is found by others 26 when using a rectangular substrate /springboard configuration.…”

Section: ∆D(t)/dsupporting

confidence: 74%

Microstructure, Phase Formation, and Stress of Reactively-Deposited Metal Hydride Thin Films

Adams¹,

Romero²,

Rodriguez³

et al. 2002

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Section: ∆D(t)/dsupporting

confidence: 74%

Microstructure, Phase Formation, and Stress of Reactively-Deposited Metal Hydride Thin Films

Adams¹,

Romero²,

Rodriguez³

et al. 2002

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“…We then compare the analytical predictions with real-time experimental measurements. It should be noted at this point that nonlinear distortions of large wafers were investigated experimentally by Finot et al, 16 who used a geometrical grid projection method to record curvatures resulting from a variety of deposition conditions and geometrical parameters.…”

Section: Introductionmentioning

confidence: 99%

Full-field optical measurement of curvatures in ultra-thin-film–substrate systems in the range of geometrically nonlinear deformations

Lee

Rosakis

Freund

2001

Journal of Applied Physics

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This article describes coherent gradient sensing ͑CGS͒ as an optical, full-field, real-time, nonintrusive, and noncontact technique for the measurement of curvatures and nonuniform curvature changes in film-substrate systems. The technique is applied to the study of curvature fields in thin Al films ͑6 m͒ deposited on thin circular silicon wafers ͑105 m͒ of ''large'' in-plane dimensions ͑50.8 mm in diameter͒ subjected to thermal loading histories. The loading and geometry is such that the system experiences deformations that are clearly within the nonlinear range. The discussion is focused on investigating the limits of the range of the linear relationship between the thermally induced mismatch strain and the substrate curvature, on the degree to which the substrate curvature becomes spatially nonuniform in the range of geometrically nonlinear deformation, and finally, on the bifurcation of deformation mode from axial symmetry to asymmetry with increasing mismatch strain. Results obtained on the basis of both simple models and more-detailed finite-element simulations are compared with the full-field CGS measurements with the purpose of validating the analytical and numerical models.

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“…Formula (1) follows from an analysis of a film-substrate system, which is based on several assumptions [15,16]. The main assumptions are (i) both the film thickness and substrate thicknesses are small compared to the lateral dimensions; (ii) the film thickness is much less than the substrate thickness; (iii) the substrate material is homogeneous, isotropic, and linearly elastic, and the film material is isotropic; (iv) edge effects near the periphery of the substrate are inconsequential; (v) all physical quantities such as Young's modulus and Poisson's ratio are invariant under change in positions parallel to the interface; (vi) all stress gradients in the thickness direction vanish throughout the material; and (vii) the strains and the rotations are small.…”

Section: Methodsmentioning

confidence: 99%

The influence of films thickness on hydrogenation behavior of titanium thin films

Tal-Gutelmacher¹,

Pundt²,

Kirchheim³

2010

J Mater Sci

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Titanium films of different thicknesses were prepared on sapphire substrates in an UHV chamber, by means of ion beam sputter deposition at room temperature, under Ar-atmosphere at the pressure of 1.5Á10 E -4 mbar. For electrochemical hydrogen loading, the films were covered by a 30-nm thick layer of Pd in order to prevent oxidation and facilitate hydrogen absorption. In situ stress measurements were conducted during step-by-step electrochemical hydrogen charging of the films. XRD measurements using a Phillips X-Pert diffractometer with a Co-Ka radiation were performed before and after hydrogenation in order to investigate the effect of hydrogen loading on the microstructure. The phase boundaries, as well as the stress and strain development during hydrogen absorption, depend strongly on the thickness of the films. The main characteristics of absorption behavior of hydrogen, as well as the thermodynamics and phase boundaries of titanium-hydrogen thin films are discussed in detail with specific emphasis on the influence of films thickness. The obtained results are also compared to literature data on the widely studied titanium-hydrogen bulk system. Shifted phase boundaries and narrowed two-phase field appear in Ti-H film system, which are mainly attributed to the microstructural contribution, as well as to the large stresses in the GPa-range that built up between the films and their substrate.

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Large deformation and geometric instability of substrates with thin-film deposits

Cited by 112 publications

References 8 publications

Microstructure, Phase Formation, and Stress of Reactively-Deposited Metal Hydride Thin Films

Microstructure, Phase Formation, and Stress of Reactively-Deposited Metal Hydride Thin Films

Full-field optical measurement of curvatures in ultra-thin-film–substrate systems in the range of geometrically nonlinear deformations

The influence of films thickness on hydrogenation behavior of titanium thin films

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